Out-of-Plane MEMS Actuation Using a Scanning Electron Microscope

2012 ◽  
Author(s):  
Alexander L. Hogan ◽  
Kurtis R. Ford ◽  
Ian R. Harvey
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Force Sensor ◽  
Plane Motion ◽  
Elastic Model ◽  
Spiral Spring ◽  
Out Of Plane ◽  
Mems Technology ◽  
Static Mechanical ◽  
Scanning Electron

In the world of micro-electromechanical systems (MEMS) R&D efforts are expended creating new means of actuation, usually trading either force or displacement. In our scheme we pump charge into an electrically isolated conductive system with a Scanning Electron Microscope (SEM) to achieve a net force away from the substrate. Though we observe a highly dynamic response, we have approximated the force of the system with a quasi-static mechanical force sensor. The study of this actuation has focused on a spiral spring fabricated in Sandia Ultra-planar Multi-level MEMS Technology (SUMMiT-V™). Experiments show the effect of SEM beam conditions on this device, most notably finding the operation to begin at 5 keV accelerating voltage, where our Monte Carlo simulation predicts the beam will begin penetrating the 0.3 μm thick polySi. The out-of-plane motion has been measured as high as 220 μm which is approximately 2/3 of the diameter of the 2D spiral. A linear elastic model of the force sensor shows that in mechanical equilibrium the deflection is associated with an equivalent uniform pressure up to 90 Pa.

scholarly journals Toward Operations in a Surgical Scenario: Characterization of a Microgripper via Light Microscopy Approach

2019 ◽  
Vol 9 (9) ◽  
pp. 1901 ◽  
Author(s):  
Federica Vurchio ◽  
Pietro Ursi ◽  
Francesco Orsini ◽  
Andrea Scorza ◽  
Rocco Crescenzi ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Statistical Analysis ◽  
Scanning Electron Microscope ◽  
Light Microscopy ◽  
Mechanical Systems ◽  
Optical Microscope ◽  
Micro Electro Mechanical Systems ◽  
Mems Technology ◽  
Scanning Electron

Micro Electro Mechanical Systems (MEMS)-Technology based micro mechanisms usually operate within a protected or encapsulated space and, before that, they are fabricated and analyzed within one Scanning Electron Microscope (SEM) vacuum specimen chamber. However, a surgical scenario is much more aggressive and requires several higher abilities in the microsystem, such as the capability of operating within a liquid or wet environment, accuracy, reliability and sophisticated packaging. Unfortunately, testing and characterizing MEMS experimentally without fundamental support of a SEM is rather challenging. This paper shows that in spite of large difficulties due to well-known physical limits, the optical microscope is still able to play an important role in MEMS characterization at room conditions. This outcome is supported by the statistical analysis of two series of measurements, obtained by a light trinocular microscope and a profilometer, respectively.

TENSILE PROPERTIES OF CARBON NANOFIBERS USING NANO-MANIPULATOR INSIDE SCANNING ELECTRON MICROSCOPE

2011 ◽  
Vol 25 (31) ◽  
pp. 4233-4236 ◽  
Author(s):  
HOON-SIK JANG ◽  
SEUNG HOON NAHM ◽  
JUNG HAN KIM ◽  
KYU HWAN OH
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Tensile Test ◽  
Carbon Nanofiber ◽  
Strain Curve ◽  
Force Sensor ◽  
Displacement Curve ◽  
Set Up ◽  
Scanning Electron ◽  
Tem Grid

We performed the tensile test of an individual carbon nanofiber (CNF) inside a scanning electron microscope. The mechanical testing system was installed in a scanning electron microscope (SEM). The nano-manipulator was set up in the SEM, and the force sensor, which is formed as a cantilever, was mounted on the nano-manipulator. Then, the force sensor can be controlled by using the nano-manipulator. The CNFs were dispersed on the transmission electron microscope (TEM) grid, and the both end of the CNFs were welded on the TEM grid and the tip of force sensor by exposing electron-beam of the SEM. The tensile test of the CNFs was performed by controlling the nano-manipulator. The load response during the tensile test was obtained by force sensor. Stess-strain curve was obtained from force-displacement curve of CNF after tensile test. The elastic modulus of CNFs was calculated at ~12.5 GPa.

Tensile Test of Individual Multi Walled Carbon Nanotube Using Nano-Manipulator inside Scanning Electron Microscope

2006 ◽  
Vol 326-328 ◽  
pp. 329-332 ◽  
Author(s):  
Hoon Sik Jang ◽  
Sung Hwan Kwon ◽  
Am Kee Kim ◽  
Seung Hoon Nahm
Keyword(s):  
Electron Microscope ◽  
Carbon Nanotube ◽  
Scanning Electron Microscope ◽  
Tensile Test ◽  
Force Sensor ◽  
Displacement Curve ◽  
Linear Deformation ◽  
Deformation And Fracture ◽  
Multi Walled Carbon Nanotube ◽  
Scanning Electron

We have attempted to observe straining responses of an individual multi-walled carbon nanotube (MWNT) by performing an in-situ tensile testing inside scanning electron microscope (SEM). The both ends of an individual MWNT was attached on the rigid support and the tip of the force sensor using electron beam and was elongated by a nano-manipulator. The nano-manipulator was automatically controlled by personal computer. Linear deformation and fracture behaviors of MWNT were successfully observed and its force-displacement curve was also measured from the bending stiffness and displacement of the force sensor and manipulator. The tensile properties of individual MWNT were evaluated from the tensile test results.

scholarly journals Determination of the Elastic Behavior of Silicon Nanowires within a Scanning Electron Microscope

2016 ◽  
Vol 2016 ◽  
pp. 1-6 ◽  
Author(s):  
Nicole Wollschläger ◽  
Zuhal Tasdemir ◽  
Ines Häusler ◽  
Yusuf Leblebici ◽  
Werner Österle ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Cross Sections ◽  
Silicon Nanowires ◽  
Silicon Nanowire ◽  
Force Sensor ◽  
Native Oxide ◽  
Elastic Behavior ◽  
Show Evidence ◽  
Scanning Electron

Three-point bending tests were performed on double-anchored,110silicon nanowire samples in the vacuum chamber of a scanning electron microscope (SEM) via a micromanipulator equipped with a piezoresistive force sensor. Nanowires with widths of 35 nm and 74 nm and a height of 168 nm were fabricated. The nanowires were obtained monolithically along with their 10 μm tall supports through a top-down fabrication approach involving a series of etching processes. The exact dimension of wire cross sections was determined by transmission electron microscopy (TEM). Conducting the experiments in an SEM chamber further raised the opportunity of the direct observation of any deviation from ideal loading conditions such as twisting, which could then be taken into consideration in simulations. Measured force-displacement behavior was observed to exhibit close resemblance to simulation results obtained by finite element modeling, when the bulk value of 169 GPa was taken as the modulus of elasticity for110silicon. Hence, test results neither show any size effect nor show evidence of residual stresses for the considered nanoscale objects. The increased effect of the native oxide with reduced nanowire dimensions was captured as well. The results demonstrate the potential of the developed nanowire fabrication approach for the incorporation in functional micromechanical devices.

The Alteration of the Pore Spaces in Sandstones

1973 ◽  
Vol 31 ◽  
pp. 210-211
Author(s):  
R. E. Ferrell ◽  
G. G. Paulson
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
The Other ◽  
Coarse Grained ◽  
Depositional Fabric ◽  
Soluble Components ◽  
Scanning Electron ◽  
Shape And Size

The pore spaces in sandstones are the result of the original depositional fabric and the degree of post-depositional alteration that the rock has experienced. The largest pore volumes are present in coarse-grained, well-sorted materials with high sphericity. The chief mechanisms which alter the shape and size of the pores are precipitation of cementing agents and the dissolution of soluble components. Each process may operate alone or in combination with the other, or there may be several generations of cementation and solution.The scanning electron microscope has ‘been used in this study to reveal the morphology of the pore spaces in a variety of moderate porosity, orthoquartzites.

The Broad Applications of the Scanning Electron Microscope

1969 ◽  
Vol 27 ◽  
pp. 20-21
Author(s):  
C. T. Nightingale ◽  
S. E. Summers ◽  
T. P. Turnbull
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Light Microscopy ◽  
Surface Topography ◽  
Great Depth ◽  
Resolving Power ◽  
Depth Of Field ◽  
Pictorial Representations ◽  
Scanning Electron

The ease of operation of the scanning electron microscope has insured its wide application in medicine and industry. The micrographs are pictorial representations of surface topography obtained directly from the specimen. The need to replicate is eliminated. The great depth of field and the high resolving power provide far more information than light microscopy.

Observability of Very Thick Specimen by Using Transmission Scanning Electron Microscope

1971 ◽  
Vol 29 ◽  
pp. 26-27
Author(s):  
K. Shibatomi ◽  
T. Yamanoto ◽  
H. Koike
Keyword(s):  
Electron Microscope ◽  
Image Quality ◽  
Scanning Electron Microscope ◽  
Chromatic Aberration ◽  
Image Contrast ◽  
Objective Lens ◽  
Thick Specimen ◽  
Transmission Electron ◽  
Scanning Electron

In the observation of a thick specimen by means of a transmission electron microscope, the intensity of electrons passing through the objective lens aperture is greatly reduced. So that the image is almost invisible. In addition to this fact, it have been reported that a chromatic aberration causes the deterioration of the image contrast rather than that of the resolution. The scanning electron microscope is, however, capable of electrically amplifying the signal of the decreasing intensity, and also free from a chromatic aberration so that the deterioration of the image contrast due to the aberration can be prevented. The electrical improvement of the image quality can be carried out by using the fascionating features of the SEM, that is, the amplification of a weak in-put signal forming the image and the descriminating action of the heigh level signal of the background. This paper reports some of the experimental results about the thickness dependence of the observability and quality of the image in the case of the transmission SEM.

Resolution of a Transmitted Electron Image Formed by A Scanning Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 386-387
Author(s):  
S. Takashima ◽  
H. Hashimoto ◽  
S. Kimoto
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Chromatic Aberration ◽  
Objective Lens ◽  
Specimen Thickness ◽  
Probe Diameter ◽  
Transmission Electron ◽  
Electron Image ◽  
Conventional Transmission Electron Microscope ◽  
Scanning Electron

The resolution of a conventional transmission electron microscope (TEM) deteriorates as the specimen thickness increases, because chromatic aberration of the objective lens is caused by the energy loss of electrons). In the case of a scanning electron microscope (SEM), chromatic aberration does not exist as the restrictive factor for the resolution of the transmitted electron image, for the SEM has no imageforming lens. It is not sure, however, that the equal resolution to the probe diameter can be obtained in the case of a thick specimen. To study the relation between the specimen thickness and the resolution of the trans-mitted electron image obtained by the SEM, the following experiment was carried out.

Characterization of Sputtered Films using the Scanning Electron Microscope

1973 ◽  
Vol 31 ◽  
pp. 44-45
Author(s):  
R. F. Schneidmiller ◽  
W. F. Thrower ◽  
C. Ang
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Sputtered Films ◽  
Plasma Sputtering ◽  
Microelectronic Devices ◽  
Control Film ◽  
Scanning Electron

Solid state materials in the form of thin films have found increasing structural and electronic applications. Among the multitude of thin film deposition techniques, the radio frequency induced plasma sputtering has gained considerable utilization in recent years through advances in equipment design and process improvement, as well as the discovery of the versatility of the process to control film properties. In our laboratory we have used the scanning electron microscope extensively in the direct and indirect characterization of sputtered films for correlation with their physical and electrical properties.Scanning electron microscopy is a powerful tool for the examination of surfaces of solids and for the failure analysis of structural components and microelectronic devices.

Field Emission SEM Equipped With Noise Compensator

1973 ◽  
Vol 31 ◽  
pp. 302-303
Author(s):  
S. Saito ◽  
H. Todokoro ◽  
S. Nomura ◽  
T. Komoda
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Field Emission ◽  
Low Contrast ◽  
Probe Current ◽  
High Resolution Images ◽  
Scanning Electron

Field emission scanning electron microscope (FESEM) features extremely high resolution images, and offers many valuable information. But, for a specimen which gives low contrast images, lateral stripes appear in images. These stripes are resulted from signal fluctuations caused by probe current noises. In order to obtain good images without stripes, the fluctuations should be less than 1%, especially for low contrast images. For this purpose, the authors realized a noise compensator, and applied this to the FESEM.Fig. 1 shows an outline of FESEM equipped with a noise compensator. Two apertures are provided gust under the field emission gun.

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