Solution-Based Fabrication of P-Channel and N-Channel Thin-Film Transistors Using Random and Aligned Carbon Nanotube Networks

2012 ◽  
Author(s):  
Yan Duan ◽  
Jason L. Juhala ◽  
Benjamin W. Griffith ◽  
Vianney J. Uwizeye ◽  
Wei Xue
Keyword(s):  
Integrated Circuits ◽  
Self Assembly ◽  
Control Method ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Logic Gates ◽  
Special Treatment ◽  
Layer By Layer ◽  
Research Fields ◽  
P Type

Since discovered in the early 1990s, single-walled carbon nanotubes (SWNTs) have attracted significant attention for many research fields. In the long term, micro- and nano-electronics are considered to be one of the most valuable applications of SWNTs. The development of the next generation devices involves the mass fabrication and integration of SWNT field-effect transistors (FETs) to form logic gates, which are the basic units of integrated circuits (ICs). To create logic gates, both p- and n-type SWNT FETs are needed. However, the SWNT FETs are typically p-type in air without special treatment, with holes as the majority charge carriers in SWNTs. Here in this paper, we investigate the p-channel and n-channel SWNT FETs using two solution-based fabrication processes. One method is to use layer-by-layer self-assembly to create SWNT random networks and the other is based on dielectrophoresis-aligned SWNTs. A low-cost, easy-to-control method is introduced to convert p-type FETs to n-type. By coating a polyethylenimine (PEI) layer on the surface, the transistor demonstrates the typical n-channel characteristics. The resulting devices are air-stable outside a vacuum or an inert environment. The combination of the simple fabrication methods, easy conversion of the devices, and satisfactory device performance can promote further development of nanotube-based electronics.

Fabricaton Ofactive Devices and Logic Gates on Fibers

2003 ◽  
Vol 769 ◽  
Author(s):  
YongWoo Choi ◽  
Ioannis Kymissis ◽  
Annie Wang ◽  
Akintunde I. Akinwande
Keyword(s):  
Threshold Voltage ◽  
Electronic Structures ◽  
Low Cost ◽  
Logic Gates ◽  
Wearable Electronics ◽  
Drain Voltage ◽  
Large Area ◽  
Active Devices ◽  
P Type ◽  
A Current

AbstractTextiles are a suitable substrate for large area, flexible and wearable electronics because of their excellent flexibility, mechanical properties and low cost manufacturability. The ability to fabricate active devices on fiber is a key step for achieving large area and flexible electronic structures. We fabricated transistors and inverters with a-Si film and pentacene film on Kapton film and cut them into fibers. The a-Si TFT showed a threshold voltage of 8.5 V and on/off ratio of 103 at a drain voltage of 10 V. These are similar to the characteristics of a TFT fabricated on a glass substrate at the same time. The maximum gain of the inverter with an enhancement n-type load was 6.45 at a drain voltage of 10 V. The pentacene OTFT showed a threshold voltage of -8 V and on/off ratio of 103 at a drain voltage of -30 V. The inverter with a depletion p-type load showed a voltage inversion but the inversion occurred at the wrong voltage. The antifuse was successfully programmed with a voltage pulse and also a current pulse. The resistance decreased from 10 GΩ to 2 kΩ after the programming.

Design and Implementation of Colloidal Quantum Dot Field-Effect Transistors

2014 ◽  
Vol 668-669 ◽  
pp. 818-821
Author(s):  
Hai Yan Wang ◽  
Ya Ting Zhang ◽  
Xiao Xian Song ◽  
Lu Fan Jin ◽  
Hai Tao Dai ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Structure Design ◽  
Layer By Layer ◽  
Gate Bias ◽  
Large Area ◽  
Photoconductive Detectors ◽  
Pbs Quantum Dots

With the breakthrough of mobility in quantum dot electric field transistors (Q-EFTs), the potential application in these functional devices has revealed and been paid more attentions, due to flexibility in design, low cost, facility for processing and large area. One of the most important applications of FETs is the photoconductive detector. However, these functional FETs have less been reported. In this work, colloidal PbS Q-FETs were successfully fabricated by reasonable structure design and layer-by-layer depositon technique PbS quantum-dots. The bipolar property was demonstrated by the output and transfer characteristics, as devices work in I and III quadrants simultaneously. The mobilities of electron and hole are 0.16 cm2/(V⋅s) and 0.28 cm2/(V⋅s), respectively. Q-FETs work as photoconductive detectors at both positive and negative gate bias voltages. Under constant gate bias, photocurrent increase exponentially with the intensity of light. The responding region consisted with the absorption range of PbS quantum dots. A linearity was found in drain voltage and incidence of laser power, the ratio was attributing to 0.0019 (μW⋅V)-1.

scholarly journals Reconfigurable Multifunctional Ambipolar Polymer Transistors with Improved Switching-off Capability Upon Non-Uniformly Distributed Compensation Potential

2020 ◽  
Author(s):  
Peng Wei ◽  
Xudong Wang ◽  
Xianglong Li ◽  
Nan Qiao ◽  
Songyu Han ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Conjugated Polymer ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Transport Channel ◽  
Electrical Field ◽  
Polymer Insulator ◽  
New Strategy ◽  
P Type ◽  
Compensation Potential

Abstract Ambipolar field-effect transistors allowing both holes and electrons transport can work in different states, which are attractive for simplifying the device manufactures and miniaturizing the integrated circuits. However, conventional ambipolar transistors intrinsically suffer from poor switching-off capability because the gate electrode is not able to simultaneously deplete holes and electrons across the entire transport channel. Here, we show that the switching-off capability of polymer ambipolar transistor is largely improved by up to 3 orders, through introducing non-uniformly distributed compensation potentials along the channel to synchronically tune the charge transport at different channel locations. Non-uniformly gate-stressed conjugated-polymer@insulator blend film induces non-uniformly trapped charges in the insulators, which consequently generates non-uniform compensation electrical field imposed in the conjugated-polymers. Both n-type and p-type operations with high mobility (2.2 and 0.8 cm2s-1V-1 respectively) and high on/off ratio (105) are obtained in the same device, and the device states are reversibly switchable, which provides a new strategy for three-level non-volatile memories and artificial synapses.

Gallium arsenide electronics in the marketplace

1992 ◽  
Vol 70 (10-11) ◽  
pp. 943-945
Author(s):  
Paul R. Jay.
Keyword(s):  
Gallium Arsenide ◽  
Integrated Circuits ◽  
Integrated Circuit ◽  
High Speed ◽  
Large Scale ◽  
Low Cost ◽  
Logic Gates ◽  
Process Technology ◽  
Maximum Benefit ◽  
Technological Developments

The last few years have seen a significant emergence of real product applications using gallium arsenide metal semi-conductor field effect transistor technology. These applications range from large volume consumer markets based on small low-cost GaAs integrated circuits to high-end supercomputer products using very large scale integrated GaAs chips containing up to 50 000 logic gates. This situation represents substantial advances in many areas: materials technology, device and integrated circuit process technology, packaging and high speed testing, as well as appropriate system design to obtain maximum benefit from the GaAs technology. This paper reviews some recent commercial successes, and considers commonalities existing between them in the context of recent technological developments.

Investigation of Using Contact and Non-contact Printing Technologies For Organic Transistor Fabrication

2002 ◽  
Vol 725 ◽  
Author(s):  
Jie Zhang ◽  
Paul Brazis ◽  
A. Roy Chowdhuri ◽  
John Szczech ◽  
Dan Gamota
Keyword(s):  
Integrated Circuits ◽  
Process Development ◽  
Field Effect Transistors ◽  
Low Cost ◽  
High Volume ◽  
Electrical Performance ◽  
Organic Polymer ◽  
Personal Area Networks ◽  
Material System ◽  
Contact Printing

AbstractLow cost, high volume manufacturing processes are envisioned for solution processable organic semiconductor integrated circuits (IC) fabrication. The organic IC may be the low cost solution for driving electronic devices, i.e. smart cards, RFID tags, flexible displays, personal area networks, and body area networks. This study investigated the manufacturability of organic electronics (organic field effect transistors (OFETs), organic light emitting diodes (OLEDs), etc.) using commercially available printing technologies and materials systems qualified for use in microelectronic products. The evaluated contact printing technologies were pad printing and screen-printing; the non-contact printing technologies were ink jetting and micro dispensing. The material system selection for transistor structures and active layers was based on printing technology requirements and commercial availability. The materials were polymer thick film conductors and insulators, conductive nano-particle suspensions, and organic polymer systems. A series of material property characterization and printing process development studies were conducted. Several OFET designs were created and functional all printed organic transistors were demonstrated. The device electrical performance was characterized.

Ti3C2Tx MXene/polyvinyl alcohol decorated polyester warp knitting fabric for flexible wearable strain sensors

2021 ◽  
pp. 004051752110441
Author(s):  
Qinghua Yu ◽  
Jinhua Jiang ◽  
Chuanli Su ◽  
Yaoli Huang ◽  
Nanliang Chen ◽  
...  
Keyword(s):  
Polyvinyl Alcohol ◽  
Self Assembly ◽  
Low Cost ◽  
Strain Sensor ◽  
High Sensitivity ◽  
Fast Response ◽  
Disease Diagnosis ◽  
Strain Sensors ◽  
Layer By Layer ◽  
Sensing Range

Flexible wearable strain sensors with excellent sensing performance have received widespread interest due to their superior application capability in the field of human-computer interaction, sports rehabilitation, and disease diagnosis. But at present, it is still a considerable challenge to exploit a flexible strain sensor with high sensitivity and wide sensing range that is easily manufactured, low-cost, and easily integrable into clothing. MXene is a promising material sensitive enough for flexible sensors due to its superior conductivity and hydrophilicity. The warp knitting weft insertion textile structure gives the fabric excellent elasticity, making it suitable as a flexible, stretchable substrate. Therefore, utilizing a polyester elastic fabric with a warp knitting weft insertion structure, a fabric strain sensor with high sensitivity and wide sensing range prepared by layer-by-layer self-assembly of polyvinyl alcohol layers and MXene layers is reported in this study. The strain sensor exhibits high sensitivity (up to 288.43), a wide sensing range (up to 50%), fast response time (50 ms), ultra-low detection limit (a strain of 0.067%), excellent cycle stability (1000 cycles), and good washability. Besides, affixing the MXene/polyvinyl alcohol/polyester elastic fabric strain sensor on the joints can detect the movement of limbs. Therefore, the MXene/polyvinyl alcohol/polyester elastic fabric strain sensor demonstrates potential application opportunities in smart wearable electronic devices, and the researcher can also apply this method in the production of other flexible, intelligent wearable devices.

Single-Walled Carbon Nanotube Micropatterns and Interconnections Fabricated With Layer-by-Layer Nano Self-Assembly and Microlithography on Flexible Substrates

2006 ◽  
Author(s):  
Wei Xue ◽  
Tianhong Cui
Keyword(s):  
Carbon Nanotube ◽  
Self Assembly ◽  
Low Cost ◽  
Flexible Substrates ◽  
Layer By Layer ◽  
Single Walled Carbon Nanotube ◽  
Plastic Substrates ◽  
Single Walled Carbon ◽  
Current Voltage ◽  
Lift Off

The fabrication and characterization of single-walled carbon nanotube (SWNT) multilayers, micropatterns and interconnections on plastic substrates are reported in this paper. The SWNT-based multilayers and devices are fabricated with a simple, fast, inexpensive, low-temperature, and highly efficient technique combining layer-by-layer (LbL) nano self-assembly, microlithography, and lift-off techniques. The SWNT multilayers are alternating layers of SWNTs and poly (dimethyldiallylammonium chloride) (PDDA). Lithography and lift-off techniques are used to pattern the SWNT multilayers. SWNT microstructures with linewidth of 5 μm are fabricated and characterized. The thickness of a (PDDA/SWNT) bi-layer is approximately 76 Å. Two-terminal SWNT thin film based interconnections are fabricated on flexible substrates. Current-voltage (I-V) characterization and four-point probe measurement show that the resistance of the interconnection is nonlinearly inversely proportional to the number of the assembled SWNT layers. The nano-assembled polymer/SWNT composite can be used in many applications due to its low cost, light weight, and long lifetime.

Flexible Layer-by-Layer Self-Assembled Graphene Based Glucose Biosensors

2011 ◽  
Author(s):  
Bo Zhang ◽  
Tony Zhengyu Cui
Keyword(s):  
Self Assembly ◽  
Low Cost ◽  
Glucose Biosensor ◽  
Layer By Layer ◽  
Glucose Biosensors ◽  
Flexible Polymer ◽  
Assembly Technique ◽  
Self Assembled ◽  
The Cost

The manufacture and characterization of glucose biosensor based on layer by layer self assembled graphene are presented. Due to self assembly technique and flexible polymer substrate, the cost of the biosensor is very competitive. The resolution of the graphene based biosensor reaches down to 10 pM, which shows greater advantages over CNT based biosensor under the same conditions. The response time of graphene biosensor is less than 3 s, which is much faster than other materials and methods. This work demonstrates that graphene and polymers are very promising materials for the applications of low-cost glucose biosensors.

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