Gallium arsenide electronics in the marketplace

1992 ◽  
Vol 70 (10-11) ◽  
pp. 943-945
Author(s):  
Paul R. Jay.
Keyword(s):  
Gallium Arsenide ◽  
Integrated Circuits ◽  
Integrated Circuit ◽  
High Speed ◽  
Large Scale ◽  
Low Cost ◽  
Logic Gates ◽  
Process Technology ◽  
Maximum Benefit ◽  
Technological Developments

The last few years have seen a significant emergence of real product applications using gallium arsenide metal semi-conductor field effect transistor technology. These applications range from large volume consumer markets based on small low-cost GaAs integrated circuits to high-end supercomputer products using very large scale integrated GaAs chips containing up to 50 000 logic gates. This situation represents substantial advances in many areas: materials technology, device and integrated circuit process technology, packaging and high speed testing, as well as appropriate system design to obtain maximum benefit from the GaAs technology. This paper reviews some recent commercial successes, and considers commonalities existing between them in the context of recent technological developments.

TEM study of phosphorus-implanted pseudomorphic Si0.88Ge0.12 on Si(100)

1995 ◽  
Vol 53 ◽  
pp. 468-469
Author(s):  
N. David Theodore ◽  
Donald Y.C Lie ◽  
J. H. Song ◽  
Peter Crozier
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
High Speed ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Bipolar Transistors ◽  
Sige Hbt ◽  
Integrated Circuit Manufacturing ◽  
Microstructural Behavior

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.

The Radio Probe™: A New Measurement Tool for High Speed Integrated Circuits

2005 ◽  
Author(s):  
Mark Kimball
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
High Speed ◽  
Attenuation Factor ◽  
Cost Effective ◽  
Frequency Measurement ◽  
Single Frequency ◽  
Measurement Tool ◽  
Probe Design ◽  
Differential Measurement

Abstract This article presents a novel tool designed to allow circuit node measurements in a radio frequency (RF) integrated circuit. The discussion covers RF circuit problems; provides details on the Radio Probe design, which achieves an input impedance of 50Kohms and an overall attenuation factor of 0 dB; and describes signal to noise issues in the output signal, along with their improvement techniques. This cost-effective solution incorporates features that make it well suited to the task of differential measurement of circuit nodes within an RF IC. The Radio Probe concept offers a number of advantages compared to active probes. It is a single frequency measurement tool, so it complements, rather than replaces, active probes.

scholarly journals In-Plane Monolithic Integration of Scaled III-V Photonic Devices

2021 ◽  
Vol 11 (4) ◽  
pp. 1887
Author(s):  
Markus Scherrer ◽  
Noelia Vico Triviño ◽  
Svenja Mauthe ◽  
Preksha Tiwari ◽  
Heinz Schmid ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
High Speed ◽  
Low Cost ◽  
Photonic Devices ◽  
Monolithic Integration ◽  
Light Emitters ◽  
Fully Integrated ◽  
Large Lattice ◽  
Hybrid Iii ◽  
Gain Material

It is a long-standing goal to leverage silicon photonics through the combination of a low-cost advanced silicon platform with III-V-based active gain material. The monolithic integration of the III-V material is ultimately desirable for scalable integrated circuits but inherently challenging due to the large lattice and thermal mismatch with Si. Here, we briefly review different approaches to monolithic III-V integration while focusing on discussing the results achieved using an integration technique called template-assisted selective epitaxy (TASE), which provides some unique opportunities compared to existing state-of-the-art approaches. This method relies on the selective replacement of a prepatterned silicon structure with III-V material and thereby achieves the self-aligned in-plane monolithic integration of III-Vs on silicon. In our group, we have realized several embodiments of TASE for different applications; here, we will focus specifically on in-plane integrated photonic structures due to the ease with which these can be coupled to SOI waveguides and the inherent in-plane doping orientation, which is beneficial to waveguide-coupled architectures. In particular, we will discuss light emitters based on hybrid III-V/Si photonic crystal structures and high-speed InGaAs detectors, both covering the entire telecom wavelength spectral range. This opens a new path towards the realization of fully integrated, densely packed, and scalable photonic integrated circuits.

Plasma Surface Modification of Silica and its Application in Epoxy Molding Compounds for Large-Scale Integrated Circuits Packaging

2010 ◽  
Vol 158 ◽  
pp. 184-188 ◽  
Author(s):  
Ming Shan Yang ◽  
Lin Kai Li ◽  
Jian Guo Zhang
Keyword(s):  
Surface Modification ◽  
Acrylic Acid ◽  
Integrated Circuits ◽  
Plasma Polymerization ◽  
High Speed ◽  
Large Scale ◽  
Treatment Time ◽  
Rf Plasma ◽  
Formaldehyde Resin ◽  
Molding Compounds

The surface modification of silica for epoxy molding compounds (EMC) was conducted by plasma polymerization using RF plasma (13.56MPa), and the modification factors such as plasma power, gas pressure and treatment time were investigated systematically in this paper. The monomers utilized for the plasma polymer coatings were pyrrole, 1,3-diaminopropane, acrylic acid and urea. The plasma polymerization coating of silica was characterized by FTIR, contact angle. Using the silica treated by plasma as filler, ortho-cresol novolac epoxy as main resin, novolac phenolic-formaldehyde resin as cross-linking agent and 2-methylmizole as curing accelerating agent, the EMCs used for the packaging of large-scale integrated circuits were prepared by high-speed pre-mixture and twin roller mixing technology. The results have shown that the surface of silica can be coated by plasma polymerization of pyrrole, 1,3-diaminopropane, acrylic acid and urea, and the comprehensive properties of EMC were improved.

scholarly journals Lead Selenide Polycrystalline Coatings Sensitized Using Diffusion and Ion Beam Methods for Uncooled Mid-Infrared Photodetection

Coatings ◽  
2018 ◽  
Vol 8 (12) ◽  
pp. 444 ◽  
Author(s):  
Hao Yang ◽  
Xiaojiang Li ◽  
Guodong Wang ◽  
Jianbang Zheng
Keyword(s):  
High Speed ◽  
Large Scale ◽  
Low Cost ◽  
Ion Beam ◽  
Lead Selenide ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Recombination Suppression ◽  
Mid Infrared ◽  
Physical Effects

Polycrystalline lead selenide material that is processed after a sensitization technology offers the additional physical effects of carrier recombination suppression and carrier transport manipulation, making it sufficiently sensitive to mid-infrared radiation at room temperature. Low-cost and large-scale integration with existing electronic platforms such as complementary metal–oxide–semiconductor (CMOS) technology and multi-pixel readout electronics enable a photodetector based on polycrystalline lead selenide coating to work in high-speed, low-cost, and low-power consumption applications. It also shows huge potential to compound with other materials or structures, such as the metasurface for novel optoelectronic devices and more marvelous properties. Here, we provide an overview and evaluation of the preparations, physical effects, properties, and potential applications, as well as the optoelectronic enhancement mechanism, of lead selenide polycrystalline coatings.

Large-scale drop test on perlite–metal syntactic foam

2018 ◽  
Vol 53 (4) ◽  
pp. 515-520 ◽  
Author(s):  
T Fiedler ◽  
M Taherishargh
Keyword(s):  
High Speed ◽  
Large Scale ◽  
Low Cost ◽  
Syntactic Foam ◽  
Drop Test ◽  
Passenger Vehicle ◽  
High Speed Imaging ◽  
Cellular Metal ◽  
Energy Absorbing ◽  
Impact Mass

Perlite–metal syntactic foam is a low-cost cellular metal intended for use in automotive impact protection. To test the viability of the material a 2.5 ton drop test was conducted. Impact mass and energy were selected to replicate the conditions of a frontal impact between a large passenger vehicle and a crash cushion. A hollow syntactic foam cylinder was manufactured to decelerate the drop weight in a controlled manner. Accelerometers and high-speed imaging were utilized to evaluate the performance of the energy absorbing element.

scholarly journals Design of a Tri-Axial Surface Micromachined MEMS Vibrating Gyroscope

Sensors ◽  
2020 ◽  
Vol 20 (10) ◽  
pp. 2822
Author(s):  
Rocco Crescenzi ◽  
Giuseppe Vincenzo Castellito ◽  
Simone Quaranta ◽  
Marco Balucani
Keyword(s):  
Integrated Circuit ◽  
Large Scale ◽  
Manufacturing Industry ◽  
Low Cost ◽  
High Volume ◽  
Electronic System ◽  
Sensors And Actuators ◽  
Micro Electro Mechanical Systems ◽  
Final Assembly ◽  
Comb Drives

Gyroscopes are one of the next killer applications for the MEMS (Micro-Electro-Mechanical-Systems) sensors industry. Many mature applications have already been developed and produced in limited volumes for the automotive, consumer, industrial, medical, and military markets. Plenty of high-volume applications, over 100 million per year, have been calling for low-cost gyroscopes. Bulk silicon is a promising candidate for low-cost gyroscopes due to its large scale availability and maturity of its manufacturing industry. Nevertheless, it is not suitable for a real monolithic IC integration and requires a dedicated packaging. New designs are supposed to eliminate the need for magnets and metal case package, and allow for a real monolithic MEMS-IC (Integrated Circuit) electronic system. In addition, a drastic cost reduction could be achieved by utilizing off-the-shelf plastic packaging with lead frames for the final assembly. The present paper puts forward the design of a novel tri-axial gyroscope based on rotating comb-drives acting as both capacitive sensors and actuators. The comb-drives are comprised of a single monolithic moving component (rotor) and fixed parts (stators). The former is made out of different concentrated masses connected by curved silicon beams in order to decouple the motion signals. The sensor was devised to be fabricated through the PolyMUMPs® process and it is intended for working in air in order to semplify the MEMS-IC monolithic integration.

Bipolar device technology challenge and opportunity

1985 ◽  
Vol 63 (6) ◽  
pp. 683-692 ◽  
Author(s):  
H. D. Barber
Keyword(s):  
Integrated Circuits ◽  
High Speed ◽  
Low Cost ◽  
Chemical Vapor ◽  
Low Noise ◽  
Isolation Techniques ◽  
Propagation Delays ◽  
Technological Barriers ◽  
On Chip ◽  
Bipolar Device

Silicon bipolar device technologies provided 65% of the world's integrated circuits in 1983. Where low noise, high current, low or high voltage, high speed or low cost are required, bipolar technologies are used. This paper will review the present status of bipolar device technologies, which make possible 100-ps gate-propagation delays, 150-μm2 gate areas, 1-GHz bandwidth amplifiers, on-chip control of over 1-A, 350-V operation, 14-GHz fT's and 10-ns. analogue-to-8-bit digital conversion. These devices are realized because of advances in isolation techniques, chemical-vapor deposition, photolithography, diffusion, ion implantation, conductor–contact interconnection technology, etching processes, and materials preparation. This paper will discuss some of the fundamental problems, modelling difficulties, and technological barriers that will impact the future development of bipolar integrated circuits.

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