scholarly journals Indium Tin Oxide Thin-Film Thermocouple Probe Based on Sapphire Microrod

Sensors ◽  
2020 ◽  
Vol 20 (5) ◽  
pp. 1289 ◽  
Author(s):  
Jinjun Deng ◽  
Linwei Zhang ◽  
Liuan Hui ◽  
Xinhang Jin ◽  
Binghe Ma
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Gas Turbines ◽  
Oxide Thin Film ◽  
Main Challenge ◽  
Thin Film Thermocouple ◽  
Thin Film Thermocouples ◽  
Thermocouple Probe

Indium tin oxide (ITO) thin-film thermocouples monitor the temperature of hot section components in gas turbines. As an in situ measuring technology, the main challenge of a thin-film thermocouple is its installation on complex geometric surfaces. In this study, an ITO thin-film thermocouple probe based on a sapphire microrod was used to access narrow areas. The performance of the probe, i.e., the thermoelectricity and stability, was analyzed. This novel sensor resolves the installation difficulties of thin-film devices.

Effect of annealing on the thermoelectricity of indium tin oxide thin film thermocouples

2020 ◽  
Vol 46 (4) ◽  
pp. 4602-4609 ◽  
Author(s):  
Xinhang Jin ◽  
Binghe Ma ◽  
Keli Zhao ◽  
Zexun Zhang ◽  
Jinjun Deng ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Thin Film ◽  
Thin Film Thermocouples

Indium–Tin–Oxide Thin-Film Transistors With In Situ Anodized Ta2O5Passivation Layer

2016 ◽  
Vol 37 (5) ◽  
pp. 603-606 ◽  
Author(s):  
Yong Le ◽  
Yang Shao ◽  
Xiang Xiao ◽  
Xin Xu ◽  
Shengdong Zhang
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film

Characteristics of Indium-Tin Oxide Thin Film Etched by Reactive Ion Etching

1994 ◽  
Vol 33 (Part 1, No. 12B) ◽  
pp. 7057-7060 ◽  
Author(s):  
Meiso Yokoyama ◽  
Jiin Wen Li ◽  
Shui Hsiang Su ◽  
Yan Kuin Su
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Reactive Ion Etching ◽  
Oxide Thin Film ◽  
Ion Etching

scholarly journals Highly conductive low-temperature combustion-derived transparent indium tin oxide thin film

2021 ◽  
Author(s):  
Longfei Song ◽  
Tony Schenk ◽  
Emmanuel Defay ◽  
Sebastjan Glinsek
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Thin Film ◽  
Low Temperature Combustion ◽  
Transparent Electronics ◽  
Temperature Combustion ◽  
Ito Thin Films

Highly conductive (conductivity 620 S cm−1) and transparent ITO thin films are achieved at low temperature (350 °C) through effective combustion solution processing via multistep coating. The properties show potential for next generation flexible and transparent electronics.

Amorphous Indium Tin Oxide Thin-Film Transistors Fabricated by Cosputtering Technique

2016 ◽  
Vol 63 (3) ◽  
pp. 1072-1077 ◽  
Author(s):  
Xin Xu ◽  
Letao Zhang ◽  
Yang Shao ◽  
Zheyuan Chen ◽  
Yong Le ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film

Transparent Conducting Indium-Tin-Oxide Thin Film with Extremely Flatted Surface

2001 ◽  
Vol 666 ◽  
Author(s):  
Hiromichi Ohta ◽  
Masahiro Orita ◽  
Masahiro Hirano ◽  
Hideo Hosono
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Film Growth ◽  
Oxide Thin Film ◽  
Force Microscopy ◽  
Atomic Force ◽  
Out Of Plane ◽  
Key Factor ◽  
Surface Microstructures

ABSTRACTIndium-tin-oxide films were grown hetero-epitaxially on YSZ surface at a substrate temperature of 900 °C, and their surface microstructures were observed by using atomic force microscopy. ITO films grown on (111) surface of YSZ exhibited very high crystal quality; full width at half maximum of out-of-plane rocking curve was 54 second. The ITO was grown spirally, with flat terraces and steps corresponding to (222) plane spacing of 0.29 nm. Oxygen pressure during film growth is another key factor to obtain atomically flat surfaced ITO thin film.

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