scholarly journals In Situ Monitoring of Growth of Vertically Stacked h-BN/Graphene Heterostructures on Ni Substrates and Their Interface Interaction

Surfaces ◽  
2020 ◽  
Vol 3 (3) ◽  
pp. 328-336
Author(s):  
Wei Wei ◽  
Guanhua Zhang ◽  
Jiaqi Pan ◽  
Yi Cui ◽  
Qiang Fu
Keyword(s):  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
In Situ Monitoring ◽  
High Coverage ◽  
Interface Interaction ◽  
Domain Boundaries ◽  
Potential Applications ◽  
Surface Microscopy ◽  
Mechanical Devices

Vertically stacked hexagonal boron nitride (h-BN)/graphene heterostructures present potential applications in electronic, photonic, and mechanical devices, and their interface interaction is one of the critical factors that affect the performances. In this work, the vertical h-BN/graphene heterostructures with high coverage are synthesized by chemical vapor deposition (CVD) of h-BN on Ni substrates followed by segregation growth of graphene at the h-BN/Ni interfaces, which are monitored by in situ surface microscopy and surface spectroscopy. We find that h-BN overlayers can be decoupled from Ni substrates by the graphene interlayers. Furthermore, the h-BN domain boundaries exhibit a confinement effect on the graphene interlayer growth and the lower graphene domains are limited within the upper h-BN domains. This work provides new insights into the formation mechanism and interface interaction of the vertical heterostructures.

In Situ Monitoring of Al Growth in Chemical Vapor Deposition by Detecting Reflected Laser Light Intensity

1995 ◽  
Vol 34 (Part 2, No. 4A) ◽  
pp. L429-L432 ◽  
Author(s):  
Kazumi Sugai ◽  
Hidekazu Okabayashi ◽  
AkikoKobayashi ◽  
Tadaaki Yako ◽  
ShunjiKishida
Keyword(s):  
Chemical Vapor Deposition ◽  
Light Intensity ◽  
Vapor Deposition ◽  
Laser Light ◽  
Chemical Vapor ◽  
In Situ Monitoring

Stress Induced During the Solid-phase Crystallization of Amorphous Silicon Deposited by LPCVD

1995 ◽  
Vol 403 ◽  
Author(s):  
T. Mohammed-Brahim ◽  
K. Kis-Sion ◽  
D. Briand ◽  
M. Sarret ◽  
F. Lebihan ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Solid Phase ◽  
Chemical Vapor ◽  
In Situ Monitoring ◽  
Crystallization Time ◽  
Solid Phase Crystallization ◽  
Pressure Chemical ◽  
Hall Effect Measurements ◽  
Deposition Techniques

AbstractThe Solid Phase Crystallization (SPC) of amorphous silicon films deposited by Low Pressure Chemical Vapor phase Deposition (LPCVD) using pure silane at 550'C was studied by in-situ monitoring the film conductance. The saturation of the conductance at the end of the crystallization process is found transient. The conductance decreases slowly after the onset of the saturation. This degradation is also observed from other analyses such as ellipsometry spectra, optical transmission and Arrhenius plots of the conductivity between 250 and 570K. Hall effect measurements show that the degradation is due to a decrease of the free carrier concentration n and not to a decrease of the mobility. This indicates a constant barrier height at the grain boundaries. The decrease of n is then due to a defect creation in the grain. Hence, whatever the substrate used, an optimum crystallization time exists. It depends on the amorphous quality film which is determined by the deposition techniques and conditions and on the crystallization parameters.

In situ characterization of Cu–Co oxides for catalytic application

2015 ◽  
Vol 177 ◽  
pp. 249-262 ◽  
Author(s):  
Z. Y. Tian ◽  
H. Vieker ◽  
P. Mountapmbeme Kouotou ◽  
A. Beyer
Keyword(s):  
Thermal Properties ◽  
Chemical Vapor ◽  
Functional Materials ◽  
Catalytic Performance ◽  
Structure Property ◽  
Temperature Oxidation ◽  
Spatially Resolved ◽  
Structure Property Relationships ◽  
Potential Applications

In situ emission and absorption FTIR methods were employed to characterize the spatially resolved structure of binary Co–Cu oxides for low-temperature oxidation of CO and propene. Co–Cu oxide catalysts were controllably synthesized by pulsed-spray evaporation chemical vapor deposition. XRD, FTIR, XPS, UV-vis and helium ion microscopy (HIM) were employed to characterize the as-prepared thin films in terms of structure, composition, optical and thermal properties as well as morphology. In situ emission FTIR spectroscopy indicates that Co3O4, CuCo2O4 and CuO are thermally stable at 650, 655 and 450 °C, respectively. The catalytic tests with absorption FTIR display that the involvement of Co–Cu oxides can initiate CO and C3H6 oxidation at lower temperatures. The results indicate that in situ emission and absorption FTIR are useful techniques to explore the thermal properties and catalytic performance of functional materials, allowing many potential applications in tailoring their temporally and spatially resolved structure-property relationships.

scholarly journals Chemical Vapour Deposition of Hexagonal Boron Nitride for Two Dimensional Electronics

2018 ◽  
Vol 3 (3) ◽  
pp. 27-34 ◽  
Author(s):  
Balaji Sompalle ◽  
Jérôme Borme ◽  
Fátima Cerqueira ◽  
Tangyou Sun ◽  
Rui Campos ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Single Photon ◽  
Hexagonal Boron Nitride ◽  
Protective Coatings ◽  
Chemical Vapour ◽  
Chemical Vapor ◽  
Chamber Pressure ◽  
Single Photon Emitters ◽  
Potential Applications ◽  
Grown Graphene

Hexagonal boron nitride (h-BN) has potential applications in protective coatings, single photon emitters and as substrate for graphene electronics. In this paper, we report on the growth of h-BN by chemical vapor deposition (CVD) using ammonia borane as the precursor. Use of CVD allows controlled synthesis over large areas defined by process parameters, e.g. temperature, time, process chamber pressure and gas partial pressures. Furthermore, independently grown graphene and h-BN layers are put together to realize enhancement in electronic properties of graphene.

Pinning of 90° domain boundaries at interface dislocations in BaTiO3/LaAIO3 {100}

1996 ◽  
Vol 54 ◽  
pp. 124-125
Author(s):  
Z.-R. Dai ◽  
Z.L. Wang ◽  
X.F. Duan ◽  
J. Zhang
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Epitaxial Thin Films ◽  
Transmission Electron ◽  
Domain Boundaries ◽  
Potential Applications ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Epitaxially grown BaTiO3 thin films have potential applications in microelectronics and integrated photonics. The ferroelectric property of this material is largely determined by the domain structure. It is believed that the structure of the substrate would have profound effect on the quality of BaTiO3 epitaxial thin films. This paper reports our studies on the pinning of 90° domain boundaries at interface dislocations.Epitaxial BaTiO3 thin films were deposited on single crystalline LaAIO3 (100) substrates at 800°C by metal-organic chemical vapor deposition (MOCVD). Cross-section specimens of the films were studied at 200 kV using an JEOL 2010 high-resolution transmission electron microscope (HRTEM).

Sign in / Sign up

Export Citation Format

Share Document