Nanoparticulate and Interfacial Mechanics in Confined Geometries Typical of Chemical-Mechanical Planarization

2003 ◽  
Author(s):  
S. H. Ng ◽  
C. M. Zettner ◽  
C. Zhou ◽  
I.-H. Yoon ◽  
S. Danyluk ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Silicon Oxide ◽  
Particle Density ◽  
Chemical Mechanical Planarization ◽  
Particle Diameter ◽  
Surface Preparation ◽  
Fluid Phase ◽  
Wafer Surface ◽  
Exact Nature ◽  
Interfacial Mechanics

Chemical-mechanical planarization (CMP), a surface preparation process used widely in integrated circuits manufacture, is currently the leading nanoscale manufacturing process worldwide, with an annual economic impact well in excess of $1 billion. Originally developed for glass polishing, CMP is used by the microelectronics industry to create silicon, silicon oxide, tungsten and copper surfaces with average roughnesses of O(10 mm). The process typically involves shearing a dilute abrasive silica or ceria nanoparticle-laden “slurry” between a compliant rough surface (the “pad”) and the surface to be polished (the “wafer”). The composition of the slurry can greatly affect material removal rates. Despite its importance, however, a lot still remains to be discovered about the fundamental mechanisms involved in this process. A multidisciplinary effort at Georgia Tech has focused upon the interfacial mechanics of this process and how nanoparticles chemomechanically wear SiO2, Si and Cu surfaces. It has been found, for example, that the wear rate of dielectric varies approximately as the particle diameter. The entrapment of particles at the asperity/dielectric interface is thought to produce the polishing, but the exact nature of this interaction is still unknown. An evanescent-wave visualization technique has therefore been developed to visualize the dynamics of fluorescent 300–500 nm diameter colloidal silica and polystyrene particles within a particle diameter of the “wafer” surface in a simplified model pad-wafer geometry. The technique has been used for the first time to the authors’ knowledge to directly measure the velocity and concentration of the interfacial particles—which presumably interact with and wear the wafer. Although the pad speeds in these studies are much lower than those encountered in the actual CMP process, the initial results suggest that there is negligible “slip” between the particle and fluid phase velocities at the wafer surface. The number of particles at the wafer surface appears, however, to be strongly affected by particle properties, including particle density and size.

Spin-on Silicon Oxide (SOX): Physical Properties of the Sol

1988 ◽  
Vol 131 ◽  
Author(s):  
Vivian Ryan ◽  
Gerald Smolinsky
Keyword(s):  
Physical Properties ◽  
Silicon Oxide ◽  
Particle Density ◽  
Etching Rate ◽  
Particle Diameter ◽  
Particle Growth ◽  
Wet Etching ◽  
Aggregation Kinetics ◽  
Average Particle ◽  
Concentration Changes

ABSTRACTThis paper describes an analysis of the physical properties of the sol using several complementary light scattering techniques. Polymerization and aggregation kinetics were followed through time-dependent changes in the size, shape, and density of the sol particles. The sot growth rate was controlled by choice of solvent and silicon concentration. Changes in viscosity and pH were small during the reaction period. Three different particle-growth regimes exist in which either the particle density increased, decreased, or remained the same. The addition of boron, hydrofluoric acid, or water accelerated the reaction. The sol experimental data correlate with the density and wet-etching rate of the cured films. After curing, high-density films were obtained from sols with three common characteristics: an average particle diameter >450 Å, a relatively high polydispersity, and a low particle density. These criteria were generally satisfied by solutions one to two days old.

Photo Lithography - Surface Preparation Interactions

2014 ◽  
Vol 219 ◽  
pp. 177-182 ◽  
Author(s):  
Philippe Garnier
Keyword(s):  
Integrated Circuits ◽  
Surface Preparation ◽  
Process Operations

More than one third of process operations consist in surface preparations in the integrated circuits’ manufacturing. Most of them are directly or indirectly linked with photo lithography. This paper deals with these interactions.

Settling Behavior of Particles in Bubble Containing Newtonian Fluids: Experimental Study and Model Development

2021 ◽  
Author(s):  
Silin Jing ◽  
Xianzhi Song ◽  
Zhaopeng Zhu ◽  
Buwen Yu ◽  
Shiming Duan
Keyword(s):  
Reynolds Number ◽  
Drag Coefficient ◽  
Volume Concentration ◽  
Settling Velocity ◽  
Particle Density ◽  
Particle Diameter ◽  
Newtonian Fluids ◽  
Spherical Particles ◽  
Bubble Volume ◽  
Particle Reynolds Number

Abstract Accurate description of cuttings slippage in the gas-liquid phase is of great significance for wellbore cleaning and the control accuracy of bottom hole pressure during MPD. In this study, the wellbore bubble flow environment was simulated by a constant pressure air pump and the transparent wellbore, and the settling characteristics of spherical particles under different gas volume concentrations were recorded and analyzed by highspeed photography. A total of 225 tests were conducted to analyze the influence of particle diameter (1–12mm), particle density (2700–7860kg/m^3), liquid viscosity and bubble volume concentration on particle settling velocity. Gas drag force is defined to quantitatively evaluate the bubble’s resistance to particle slippage. The relationship between bubble drag coefficient and particle Reynolds number is obtained by fitting the experimental results. An explicit settling velocity equation is established by introducing Archimedes number. This explicit equation with an average relative error of only 8.09% can directly predict the terminal settling velocity of the sphere in bubble containing Newtonian fluids. The models for predicting bubble drag coefficient and the terminal settling velocity are valid with particle Reynolds number ranging from 0.05 to 167 and bubble volume concentration ranging from 3.0% to 20.0%. Besides, a trial-and-error procedure and an illustrative example are presented to show how to calculate bubble drag coefficient and settling velocity in bubble containing fluids. The results of this study will provide the theoretical basis for wellbore cleaning and accurate downhole pressure to further improve the performance of MPD in treating gas influx.

Gastric emptying of nondigestible solids in dogs: a hydrodynamic correlation

1990 ◽  
Vol 258 (1) ◽  
pp. G65-G72 ◽  
Author(s):  
P. J. Sirois ◽  
G. L. Amidon ◽  
J. H. Meyer ◽  
J. Doty ◽  
J. B. Dressman
Keyword(s):  
Particle Size ◽  
Gastric Emptying ◽  
Gravitational Constant ◽  
Particle Density ◽  
Particle Diameter ◽  
High Viscosity ◽  
Fluid Viscosity ◽  
Fluid Flow Rate ◽  
Hydrodynamic Correlation ◽  
Viscosity Polymer

The influence of particle size, particle density, fluid viscosity, and fluid flow rate on the gastric emptying of nondigestible solids was investigated in five dogs with chronically placed fistulas. Six hundred and fifty particles of 13 different size and density combinations were administered simultaneously with 500 ml of either normal saline or low-, medium-, or high-viscosity polymer solutions. The canine stomach was found to discriminate between these solids on the basis of size and density at all levels of viscosity above saline. The observed patterns of emptying are consistent with the hypothesis that gastric emptying of nondigestible solids is governed in part by hydrodynamics and correlate well with the gastric-emptying coefficient (GEC), a dimensionless grouping of variables that takes the form GEC = (Dpy/Dp) [g(rho f - rho p)Dp2]/[eta (nu)] where [g(rho f - rho p)] is particle buoyancy consisting of fluid (rho f) and particle (rho p) densities and g, the gravitational constant; (Dp) is the particle diameter, (Dpy) the estimated pyloric diameter, eta the fluid viscosity, and (nu) the average linear velocity of fluid exiting the stomach.

Surface Preparation of Poly-Si Using Dry Cleaning for Minimizing Interfacial Resistance

2012 ◽  
Vol 195 ◽  
pp. 71-74
Author(s):  
Choong Kee Seong ◽  
Tae Soo Lim ◽  
Jeong Gil Lee ◽  
Jin I Lee ◽  
Ki Jong Park ◽  
...  
Keyword(s):  
Boron Oxide ◽  
High Speed ◽  
Silicon Oxide ◽  
Surface Preparation ◽  
Surface Oxidation ◽  
Interfacial Resistance ◽  
Metal Gate ◽  
Dry Cleaning ◽  
Low Resistivity ◽  
Integration Density

As the integration density of memory increases, a low resistivity gate electrode is essential to meet the current needs of high speed operation. It has been known that one of major limitation of low resistivity gate is dopant penetration between poly-si and metal gate. Those dopants are penetrated and segregated on the surface of poly-si when annealed, which increases interfacial resistance and causes detrimental performance on the devices. Surface oxidation, level of boron oxide or silicon oxide on the poly-si surface is also getting higher after annealing. Therefore, it is necessary to remove those dopants oxidized layers on the surface of the activated poly-si in order to obtain minimal increases of interfacial resistance.

Visualizing Test on the Distribution Rule of Coarse Particles in a Double Blade Pump

2019 ◽  
Author(s):  
Xianfang Wu ◽  
Xiao Tian ◽  
Minggao Tan ◽  
Houlin Liu
Keyword(s):  
Particle Concentration ◽  
Two Phase Flow ◽  
Particle Density ◽  
Particle Diameter ◽  
Phase Flow ◽  
Coarse Particles ◽  
Two Phase ◽  
Solid Liquid ◽  
Blade Pump ◽  
Flow Pump

Abstract As a typical fluid mechanics problem, pump blockage has always been a hot research topic. The obtaining of the distribution of coarse particles in the solid-liquid two-phase flow pump is the basis of improving its non-blocking performance. High-speed photography technique is applied to do visualizing test and research on the distribution of coarse particles in a double blade pump. The effects of particle concentration, particle density and particle diameter on the distribution of coarse particles in the solid-liquid two-phase flow pump at different phases are studied. Besides, the variation of hydraulic performance of the double blade pump under different parameters is also analyzed. The results show that the particles in the impeller mainly located in the vicinity of the blade pressure surface, and the distribution of the particles in each section of the volute is quite different. The great difference in particle density can result in obviously uneven distribution of particles. With the increase of particle diameter, particle density and particle concentration, the pump head and efficiency both decrease while the shaft power increase on the contrary. This research results can also provide a basis for the optimization design of solid-liquid two-phase flow pumps.

In SEM a New Method of Internal Micrographic Visualization of Semiconductor Materials and IC by Crossing the Surface

2001 ◽  
Vol 7 (S2) ◽  
pp. 484-485
Author(s):  
Ling Xiao ◽  
Zhuguan Liang ◽  
Yawen Li ◽  
Jian Wang ◽  
Kailin Zhou ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Silicon Oxide ◽  
Detection Method ◽  
New Method ◽  
Semiconductor Materials ◽  
Contactless Method ◽  
Quality And Reliability ◽  
Nitride Layers ◽  
Scanning Electron

In the paper, we firstly publish a new method of internal micrographic visualization of semiconductor and IC. The quality and reliability of the semiconductor materials (SM) and the integrated circuits (IC) have always been concerned Having a high resolution, high reliable and nondestructive detection method is the key element for their improvements.Silicon oxide layers are used to provide the electrical insulation in the multi-structured ICs. The IC device surfaces are often protected by silicon oxide and silicon nitride layers. Therefore, these insulation layers also cover any inhomogeneity and defect located within the IC devices. It is necessary to have an examining method to detect those defects that are under the insulation layers without damaging the samples. However, the conventional scanning electron microscope (SEM) cannot be utilized to image and examine the surfaces that are positioned below the insulation layers.Novel nondestructive and contactless method has been developed in our laboratory to obtain the internal micrograph that crosses the surface of the semiconductor material and the integrated circuit.

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