Self-Assembled Nano Wires

Author(s):  
Taher Saif ◽  
B. Erdem Alaca ◽  
Huseyin Sehitoglu

We present a novel technique to fabricate self assembled nano wires on substrates, or channels of nano dimensions on thin films. The width of the wires or channels can be 50 nm and below, but their lengths can be 100s of micro meters. The technique is as follows: a substrate is coated by a film which is then strained either by applying load on the film-substrate system or by residual stress of the film itself. If the stress on the film exceeds that of its fracture stress, the film cracks with nano-dimensional opening to the substrate. The pattern of the cracks on the film depends on the type of stress (uniaxial or biaxial), strength of the interface between the substrate and the film, and the fracture strength of the film. Thus, the crack pattern can be controlled by tuning such parameters. The self assembled network of cracks can be used as nano channels, or the cracks can be filled by a metal that bonds with the substrate, which, after removal of the cracked film, gives a network of nano wires. We present the results of our initial experiments which have resulted Nickel wires on Si substrate. The wires are 300nm wide and millimeters long.

RSC Advances ◽  
2017 ◽  
Vol 7 (63) ◽  
pp. 39685-39685
Author(s):  
Vivekanandan Raman ◽  
Dinah Punnoose ◽  
Pari Baraneedharan ◽  
Sunkara Srinivasa Rao ◽  
Chandu V. V. M. Gopi ◽  
...  

Correction for ‘Study on the efficient PV/TE characteristics of the self-assembled thin films based on bismuth telluride/cadmium telluride’ by Vivekanandan Raman et al., RSC Adv., 2017, 7, 6735–6742.


2011 ◽  
Vol 1299 ◽  
Author(s):  
Ping Du ◽  
I-Kuan Lin ◽  
Yunfei Yan ◽  
Xin Zhang

ABSTRACTSilicon carbide (SiC) has received increasing attention on the integration of microelectro-mechanical system (MEMS) due to its excellent mechanical and chemical stability at elevated temperatures. However, the deposition process of SiC thin films tends to induce relative large residual stress. In this work, the relative low stress material silicon oxide was added into SiC by RF magnetron co-sputtering to form silicon oxycarbide (SiOC) composite films. The composition of the films was characterized by Energy dispersive X-ray (EDX) analysis. The Young’s modulus and hardness of the films were measured by nanoindentation technique. The influence of oxygen/carbon ratio and rapid thermal annealing (RTA) temperature on the residual stress of the composite films was investigated by film-substrate curvature measurement using the Stoney’s equation. By choosing the appropriate composition and post processing, a film with relative low residual stress could be obtained.


2003 ◽  
Vol 794 ◽  
Author(s):  
Y.F. Gao

ABSTRACTMorphological and compositional self-assembly can be manipulated by the long-range elastic field. This paper gives a universal formulation that determines the dependence of energetically favored orientation of those self-assembled structures on the elastic interaction. Elasticity anisotropy can lead to symmetry breaking and herringbone structures. A layered substrate can tune the feature size by modulus mismatch, or tune the orientation if the layers have different orientation preference, or guide the self-assembly by embedded structures. A closed-form result is derived for elastically isotropic layers by using Dundurs parameters. The self-assembled structures can also be affected by a nonuniform residual stress field or external force field. Higher order (nonlinear) perturbation theory, coupling between morphology and composition, and other issues are also addressed in the discussion.


2010 ◽  
Vol 654-656 ◽  
pp. 1768-1771 ◽  
Author(s):  
Shinji Muraishi ◽  
Hiromitsu Chinen ◽  
Masaaki Takaya ◽  
Kousuke Hara

The surface displacement of the indented layered composite has been observed by AFM and TEM, and the elastic recovery due to the indentation residual stress is compared with the prediction of the triangular dislocation model. At the shoulders of the indentation, the upheaval of Al-4wt%Cu film is smoothly connected, whereas that of Al2Cu film is localized as the intensive sheared displacement. The magnitude of the elastic recovery in film/substrate composite is larger than the predicted value, which might be attributed to the repulsive interaction between the glide dislocations and the hard Si substrate.


2017 ◽  
Vol 56 (5) ◽  
pp. 050301 ◽  
Author(s):  
Ningli Chen ◽  
Guangyang Lin ◽  
Lu Zhang ◽  
Cheng Li ◽  
Songyan Chen ◽  
...  

2000 ◽  
Vol 123 (2) ◽  
pp. 340-347 ◽  
Author(s):  
Taofang Zeng ◽  
Gang Chen

The measured thermal resistance across a thin film deposited on a substrate often includes the internal thermal resistance within the film and the thermal boundary resistance (TBR) across the film-substrate interface. These two resistances are frequently lumped and reported as an equivalent thermal conductivity of the film. Two fundamental questions should be answered regarding the use of this equivalent thermal conductivity. One is whether it leads to the correct temperature distribution inside the film. The other one is whether it is applicable for thin films with internal heat generation. This paper presents a study based on the Boltzmann transport equation (BTE) to treat phonon heat conduction inside the film and across the film-substrate interface simultaneously, for the cases with and without internal heat generation inside the film. Material systems studied include SiO2 and diamond films on Si substrates, representative of thin-film materials with low and high thermal conductivity. It is found that for a SiO2 film on a Si substrate, the film thermal conductivity and TBR can be treated independently, while for a diamond film on a Si substrate, the two are related to each other by the interface scattering. When the free surface behaves as a black phonon emitter, the TBR for thin diamond films with internal heat generation is the same as that without the internal heat generation. When the free surface is adiabatic, however, the TBR increases and approaches the value of the corresponding black surface as the film thickness increases. Results of this study suggest that great care must be taken when extending the effective thermal conductivity measured for thin films under one experimental condition to other application situations.


2014 ◽  
Vol 996 ◽  
pp. 930-935
Author(s):  
Romain Cauchois ◽  
András Borbély ◽  
Patrice Gergaud ◽  
Mohamed Saadaoui ◽  
Karim Inal

Colloidal suspensions of nanoparticles are increasingly employed in the fabrication process of electronic devices using inkjet-printing technology and a consecutive thermal treatment. The evolution of internal stresses during the conversion of silver nanoparticle-based ink into a metallic thin-film by a thermal sintering process has been investigated by in-situ XRD using the sin2ψ method. Despite the CTE mismatch at the film/substrate interface, the residual stress in silver films (below 70 MPa) remains lower than in conventional PVD thin-films, as a result of the remaining porosity. A Warren-Averbach analysis further showed that the crystallite growth is associated with a minimization of the twin fault density and the elastic microstrain energy above 150°C. A stabilization of the microstructure and internal stress is observed above 300°C. Inkjet-printing technology thus appears as a good alternative to conventional metallization techniques and offers significant opportunities asset for interconnect and electronic packaging.


RSC Advances ◽  
2021 ◽  
Vol 11 (26) ◽  
pp. 15539-15545
Author(s):  
Tahta Amrillah ◽  
Angga Hermawan ◽  
Shu Yin ◽  
Jenh-Yih Juang

BiFeO3–CoFe2O4 vertically aligned nanocomposites, which mainly discovered in thin-films deposited on rigid substrates, have been successfully transformed into a flexible thin-film using a mica substrate.


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