Titanium diffusion and residual stress of platinum thin films on Ti∕SiO2∕Si substrate

2005 ◽  
Vol 98 (1) ◽  
pp. 013538 ◽  
Author(s):  
Kai Wang ◽  
Kui Yao ◽  
Soo Jin Chua
Author(s):  
Taher Saif ◽  
B. Erdem Alaca ◽  
Huseyin Sehitoglu

We present a novel technique to fabricate self assembled nano wires on substrates, or channels of nano dimensions on thin films. The width of the wires or channels can be 50 nm and below, but their lengths can be 100s of micro meters. The technique is as follows: a substrate is coated by a film which is then strained either by applying load on the film-substrate system or by residual stress of the film itself. If the stress on the film exceeds that of its fracture stress, the film cracks with nano-dimensional opening to the substrate. The pattern of the cracks on the film depends on the type of stress (uniaxial or biaxial), strength of the interface between the substrate and the film, and the fracture strength of the film. Thus, the crack pattern can be controlled by tuning such parameters. The self assembled network of cracks can be used as nano channels, or the cracks can be filled by a metal that bonds with the substrate, which, after removal of the cracked film, gives a network of nano wires. We present the results of our initial experiments which have resulted Nickel wires on Si substrate. The wires are 300nm wide and millimeters long.


2006 ◽  
Vol 320 ◽  
pp. 65-68
Author(s):  
Keisuke Fujito ◽  
Naoki Wakiya ◽  
Takanori Kiguchi ◽  
Nobuyasu Mizutani ◽  
Kazuo Shinozaki

Changes of residual stress and electrical properties were examined in (001)-oriented and (111)-oriented Pb(Zr0.5Ti0.5)O3 (PZT) thin films deposited on a buffered-Si substrate with a buffer and bottom electrode layer of a (La,Sr)CoO3(LSCO). A (001)-epitaxial PZT film was prepared on LSCO/CeO2 /Zr0.85Y0.15O1.93(YSZ)/Si. In addition, a (111)-oriented PZT film was prepared on LSCO/SrTiO3(ST) /Mn0.24Zn0.09Fe2.67O4(MZF)/YSZ/Si. The residual tensile stress in (001)-PZT thin films decreased from 2.92 to 1.98 GPa and the remanent polarization increased from 7.5 to 41.7 @C/cm2 as the LSCO thickness increased. In (111)-PZT, the residual tensile stress decreased from 1.72 to 0.95 GPa and remanent polarization increased from 9.5 to 26.7 @C/cm2. The residual tensile stress of (111)-PZT was less than that of (001)-PZT. The remanent polarization in the 80 nm (111)-PZT was greater than that of the 60 nm (001)-PZT. In the 700-nm-thick PZT, the remanent polarization in (001)-PZT was greater than that in (111)-PZT.


Author(s):  
F.-R. Chen ◽  
T. L. Lee ◽  
L. J. Chen

YSi2-x thin films were grown by depositing the yttrium metal thin films on (111)Si substrate followed by a rapid thermal annealing (RTA) at 450 to 1100°C. The x value of the YSi2-x films ranges from 0 to 0.3. The (0001) plane of the YSi2-x films have an ideal zero lattice mismatch relative to (111)Si surface lattice. The YSi2 has the hexagonal AlB2 crystal structure. The orientation relationship with Si was determined from the diffraction pattern shown in figure 1(a) to be and . The diffraction pattern in figure 1(a) was taken from a specimen annealed at 500°C for 15 second. As the annealing temperature was increased to 600°C, superlattice diffraction spots appear at position as seen in figure 1(b) which may be due to vacancy ordering in the YSi2-x films. The ordered vacancies in YSi2-x form a mesh in Si plane suggested by a LEED experiment.


1992 ◽  
Vol 7 (11) ◽  
pp. 3065-3071 ◽  
Author(s):  
Peir-Yung Chu ◽  
Isabelle Campion ◽  
Relva C. Buchanan

Phase transformation and preferred orientation in ZrO2 thin films, deposited on Si(111) and Si(100) substrates, and prepared by heat treatment from carboxylate solution precursors were investigated. The deposited films were amorphous below 450 °C, transforming gradually to the tetragonal and monoclinic phases on heating. The monoclinic phase developed from the tetragonal phase displacively, and exhibited a strong (111) preferred orientation at temperature as low as 550 °C. The degree of preferred orientation and the tetragonal-to-monoclinic phase transformation were controlled by heating rate, soak temperature, and time. Interfacial diffusion into the film from the Si substrate was negligible at 700 °C and became significant only at 900 °C, but for films thicker than 0.5 μm, overall preferred orientation exceeded 90%.


2009 ◽  
Vol 113 (2) ◽  
pp. 976-983 ◽  
Author(s):  
Wonbong Jang ◽  
Jongchul Seo ◽  
Choonkeun Lee ◽  
Sang-Hyon Paek ◽  
Haksoo Han

2009 ◽  
Vol 45 (9) ◽  
pp. 3365-3365
Author(s):  
Javier Alonso ◽  
Iaki Orue ◽  
M. Fdez-Gubieda ◽  
Jos Manuel Barandiaran ◽  
Jess Chaboy ◽  
...  
Keyword(s):  

2018 ◽  
Vol 17 (03) ◽  
pp. 1760039
Author(s):  
K. M. Dhanisha ◽  
M. Manoj Christopher ◽  
M. Abinaya ◽  
P. Deepak Raj ◽  
M. Sridharan

The present work deals with NiO/Si3N4 layers formed by depositing nickel oxide (NiO) thin films over silicon nitrate (Si3N[Formula: see text] thin films. NiO films were coated on Si3N4-coated Si substrate using magnetron sputtering method by changing duration of coating time and were analyzed using X-ray diffractometer, field emission-scanning electron microscopy, UV–Vis spectrophotometer and four-point probe method to study the influence of thickness on physical properties. Crystallinity of the deposited films increases with increase in thickness. All films exhibited spherical-like structure, and with increase in deposition time, grains are coalesced to form smooth surface morphology. The optical bandgap of NiO films was found to decrease from 3.31[Formula: see text]eV to 3.22[Formula: see text]eV with upsurge in the thickness. The film deposited for 30[Formula: see text]min exhibits temperature coefficient resistance of [Formula: see text]1.77%/[Formula: see text]C as measured at 80[Formula: see text]C.


2007 ◽  
Vol 19 (8-9) ◽  
pp. 749-754 ◽  
Author(s):  
Y. Y. Kim ◽  
C. H. Ahn ◽  
S. W. Kang ◽  
B. H. Kong ◽  
S. K. Mohanta ◽  
...  

2001 ◽  
Vol 688 ◽  
Author(s):  
H. Uchida ◽  
H. Yoshikawa ◽  
I. Okada ◽  
H. Matsuda ◽  
T. Iijima ◽  
...  

AbstractBismuth titanate (Bi4Ti3O12; BIT) -based ferroelectric materials are proposed from the view of the “Site-engineering”, where the Bi-site ions are substituted by lanthanoid ions (La3+ and Nd3+) and Ti-site ions by other ions with higher charge valence (V5+). In the present study, influences of vanadium (V) - substitution for (Bi,M)4Ti3O12 thin films [M = lanthanoid] on the ferroelectric properties are evaluated. V-substituted (Bi,M)4Ti3O12 films have been fabricated using a chemical solution deposition (CSD) technique on the (111)Pt/Ti/SiO2/(100)Si substrate. Remnant polarization of (Bi,La)4Ti3O12 and (Bi,Nd)4Ti3O12 films has been improved by the V-substitution independent of the coercive field. The processing temperature of BLT and BNT films could also be lowered by the V-substitution.


2001 ◽  
Vol 703 ◽  
Author(s):  
Huiping Xu ◽  
Adam T. Wise ◽  
Timothy J. Klemmer ◽  
Jörg M. K. Wiezorek

ABSTRACTA combination of XRD and TEM techniques have been used to characterize the response of room temperature magnetron sputtered Fe-Pd thin films on Si-susbtrates to post-deposition order-annealing at temperatures between 400-500°C. Deposition produced the disordered Fe-Pd phase with (111)-twinned grains approximately 18nm in size. Ordering occurred for annealing at 450°C and 500°C after 1.8ks, accompanied by grain growth (40-70nm). The ordered FePd grains contained (111)-twins rather than {101}-twins typical of bulk ordered FePd. The metallic overlayers and underlayers selected here produced detrimental dissolution (Pt into Fe-Pd phases) and precipitation reactions between Pd and the Si substrate.


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