Nanowire Arrays for Thermoelectric Devices

2003 ◽  
Author(s):  
Woo C. Kim ◽  
Alexis R. Abramson ◽  
Scott T. Huxtable ◽  
Arun Majumdar ◽  
Yiying Wu ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Nanowire Arrays ◽  
Native Oxide ◽  
Thermoelectric Device ◽  
Growth Mechanisms ◽  
Thermoelectric Devices ◽  
Current Voltage ◽  
Semiconductor Junction ◽  
Fabrication And Characterization

This study reports on the fabrication and characterization of two prototype thermoelectric devices constructed of either silicon (Si) or bismuth telluride (Bi2Te3) nanowire arrays. The growth mechanisms and fabrication procedures of the Si and Bi2Te3 devices are different as described in this paper. To characterize the thermoelectric device components, current-voltage (I-V) characteristics were first used to estimate their performance. For the Si device, the I-V characteristics suggest ohmic contacts at the metal-semiconductor junction. For the Bi2Te3 device, the I-V characteristics curve showed a rectifying contact. Either low doping of the Bi2Te3 or surface contamination, i.e. native oxide, may cause the rectifying contact. The reversible Peltier effects occurring within the Si device were analyzed using a micro-thermocouple. Results indicated possible limitations of using Si nanowire arrays for the thermoelectric device.

Fabrication and Characterization of Single-Crystalline AgSbTe 2 Nanowire Arrays

2013 ◽  
Vol 30 (10) ◽  
pp. 108102 ◽  
Author(s):  
You-Wen Yang ◽  
Tian-Ying Li ◽  
Wen-Bin Zhu ◽  
Dong-Ming Ma ◽  
Dong Chen
Keyword(s):  
Nanowire Arrays ◽  
Single Crystalline ◽  
Fabrication And Characterization

FABRICATION AND CHARACTERIZATION OF La2-xSrxCuO4/Nb-SrTiO3 HETEROJUNCTIONS IN DIFFERENT DOPED REGIMES

2012 ◽  
Vol 27 (01) ◽  
pp. 1350005 ◽  
Author(s):  
Y. ZHANG ◽  
G. F. WANG ◽  
W. L. LI ◽  
J. Q. SHEN ◽  
P. G. LI ◽  
...  
Keyword(s):  
Carrier Density ◽  
Pulsed Laser ◽  
Depletion Layer ◽  
Laser Deposition ◽  
Superconducting Gap ◽  
Applied Bias ◽  
Current Voltage ◽  
Fabrication And Characterization ◽  
The Difference

Two types of p–n junction were fabricated by depositing underdoped La 1.9 Sr 0.1 CuO 4 film and overdoped La 1.8 Sr 0.2 CuO 4 film on n -type 0.5 wt.% Nb -doped SrTiO 3 (NSTO) substrates using pulsed laser deposition technique (PLD), respectively. Current–voltage (I–V) characteristics of the La 2-x Sr x CuO 4/NSTO heterojunction were measured in the temperature range from 5 K to 300 K. All I–V curves show a fine rectifying property and a visible reduction of the diffusion potential (Vd) is observed, but the behaviors of Vd are vastly different for the underdoped and overdoped regimes at temperatures below Tc. Analysis results show that the characteristics of the heterojunction are possibly affected not only by the superconducting gap of LSCO at Tc, but also by the depletion layer in the interface of LSCO/NSTO junction. The variation of the depletion layer is possibly different under the same applied bias voltages for the underdoped La 1.9 Sr 0.1 CuO 4/NSTO junction and overdoped La 1.8 Sr 0.2 CuO 4/NSTO junction due to the difference of carrier density at La 1.9 Sr 0.1 CuO 4 and La 1.8 Sr 0.2 CuO 4.

Fabrication and characterization of a GaAs lateral optical switch with Ni/Ge/Au ohmic contacts

1992 ◽  
Author(s):  
Robert J. Zeto ◽  
Charles D. Mulford ◽  
Wayne H. Chang ◽  
A. M. Balekdjian ◽  
Richard T. Lareau ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Optical Switch ◽  
Fabrication And Characterization

Fabrication and Characterization of a Nanowire/Polymer-Based Nanocomposite for a Prototype Thermoelectric Device

2004 ◽  
Vol 13 (3) ◽  
pp. 505-513 ◽  
Author(s):  
A.R. Abramson ◽  
W.C. Kim ◽  
S.T. Huxtable ◽  
H. Yan ◽  
Y. Wu ◽  
...  
Keyword(s):  
Thermoelectric Device ◽  
Fabrication And Characterization

Fabrication and Characterization of GaAs Tunnel Diode and ErAs Nanoparticles Enhanced GaAs Tunnel Diode for Multijunction Solar Cell

2014 ◽  
Vol 1602 ◽  
Author(s):  
Tomah Sogabe ◽  
Yasushi Shoji ◽  
Mitsuyoshi Ohba ◽  
Naito Shunya ◽  
Naoya Miyashita ◽  
...  
Keyword(s):  
Hysteresis Loop ◽  
Contact Area ◽  
Tunnel Diode ◽  
Enhancement Effect ◽  
Peak Current Density ◽  
Gaas Sample ◽  
Load Line ◽  
Current Voltage ◽  
Fabrication And Characterization

ABSTRACTWe report here the fabrication and characterization of GaAs tunnel diode (TD) and ErAs nanoparticles (Nps) enhanced GaAs TD. Four GaAs TDs with different contact area were fabricated by using MOCVD. We found extremely high peak current density of ∼250A/cm2 for the TD with r=0.25mm contact area. Moreover a hysteresis loop was appeared during sweeping up and sweeping down the external voltage. A ‘vector load line model’ was proposed to explain the origin of the shape of the hysteresis loop and the onset of the bistability occurred at the intersect of the loadline and the current-voltage (I-V) curve of TD. Meanwhile, we have grown ErAs Nps on GaAs(100) surface by using MBE and succeeded in overgrowth of GaAs after ErAs deposition. GaAs(p+)/ErAs(Nps)/GaAs(n+) TDs were fabricated and characterized. We found the GaAs sample containing 70s deposition of ErAs showed the best TD behavior. No TD behavior was observed for the sample without addition of ErAs Nps, clearly indicating the strong tunneling enhancement effect from ErAs Nps.

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