Fabrication and characterization of a GaAs lateral optical switch with Ni/Ge/Au ohmic contacts

1992 ◽  
Author(s):  
Robert J. Zeto ◽  
Charles D. Mulford ◽  
Wayne H. Chang ◽  
A. M. Balekdjian ◽  
Richard T. Lareau ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Optical Switch ◽  
Fabrication And Characterization

Nanowire Arrays for Thermoelectric Devices

2003 ◽  
Author(s):  
Woo C. Kim ◽  
Alexis R. Abramson ◽  
Scott T. Huxtable ◽  
Arun Majumdar ◽  
Yiying Wu ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Nanowire Arrays ◽  
Native Oxide ◽  
Thermoelectric Device ◽  
Growth Mechanisms ◽  
Thermoelectric Devices ◽  
Current Voltage ◽  
Semiconductor Junction ◽  
Fabrication And Characterization

This study reports on the fabrication and characterization of two prototype thermoelectric devices constructed of either silicon (Si) or bismuth telluride (Bi2Te3) nanowire arrays. The growth mechanisms and fabrication procedures of the Si and Bi2Te3 devices are different as described in this paper. To characterize the thermoelectric device components, current-voltage (I-V) characteristics were first used to estimate their performance. For the Si device, the I-V characteristics suggest ohmic contacts at the metal-semiconductor junction. For the Bi2Te3 device, the I-V characteristics curve showed a rectifying contact. Either low doping of the Bi2Te3 or surface contamination, i.e. native oxide, may cause the rectifying contact. The reversible Peltier effects occurring within the Si device were analyzed using a micro-thermocouple. Results indicated possible limitations of using Si nanowire arrays for the thermoelectric device.

Fabrication and Characterization of Ohmic Contacts to 3C-SiC Layers Grown on Silicon

2019 ◽  
Vol 963 ◽  
pp. 485-489
Author(s):  
Monia Spera ◽  
Giuseppe Greco ◽  
Raffaella Lo Nigro ◽  
Salvatore di Franco ◽  
Domenico Corso ◽  
...  
Keyword(s):  
Structural Analysis ◽  
Ohmic Contacts ◽  
Specific Contact Resistance ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
X Ray ◽  
Specific Contact ◽  
Fabrication And Characterization ◽  
P Type

This paper reports on the formation and characterization of Ohmic contacts to n-type and p-type type 3C-SiC layers grown on silicon substrates. In particular, Ohmic contact behavior was obtained either using Ni or Ti/Al/Ni layers annealed at 950°C. The values of the specific contact resistance ρc estimated by means of circular TLM (C-TLM) structures varied in the range ~ 10-3-10-5 Ωcm2, depending on the doping level of the 3C-SiC layer. A structural analysis performed by X-Ray Diffraction (XRD) allowed to identify the main phases formed upon annealing, i.e., Ni2Si and Al3Ni2. The morphology of the reacted contacts depended on that of the underlying substrate. The results can be useful for the development of a variety of devices on the cubic 3C-SiC polytype.

GaAs/GaAlAs MULTIQUANTUM WELL ELECTROABSORPTION REFLECTION MODULATOR AND SELF ELECTRO-OPTIC EFFECT DEVICE (SEED)

1996 ◽  
Vol 07 (03) ◽  
pp. 399-407
Author(s):  
RONGHAN WU ◽  
WENZHI GAO ◽  
JUN ZHAO ◽  
ZHIBIAO CHEN ◽  
SHIMING LIN ◽  
...  
Keyword(s):  
Stark Effect ◽  
Optical Switch ◽  
Contrast Ratio ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Quantum Confined Stark Effect ◽  
Electro Optic ◽  
Fabry Perot ◽  
Fabrication And Characterization

GaAs/GaAlAs MQW reflection modulators and SEED have been investigated. The analysis is emphasized on the combined behaviors of quantum confined Stark effect (QCSE), distributed Bragg reflector (DBR), and different asymmetric Fabry–Perot cavities (ASFP). Experimental results include the fabrication and characterization of a modulator array with a contrast ratio of about 10 dB and S-SEED array with optical switch energy less than 10 fJ /(µ m )2. An application of a modulator array in microoptical interconnection module is also demonstrated.

scholarly journals Fabrication and characterization of nickel silicide ohmic contacts to n-type 4H silicon carbide

2008 ◽  
Vol 100 (4) ◽  
pp. 042003 ◽  
Author(s):  
A Kuchuk ◽  
V Kladko ◽  
M Guziewicz ◽  
A Piotrowska ◽  
R Minikayev ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Nickel Silicide ◽  
Fabrication And Characterization

Microstructural Characterization of Au-Ge-Ni based ohmic contacts to GaAs/AlGaAs modfet device

1987 ◽  
Vol 45 ◽  
pp. 326-327
Author(s):  
A.K. Rai ◽  
A.K. Petford-Long ◽  
A. Ezis ◽  
D.W. Langer
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Microstructural Characterization ◽  
Almost Everywhere ◽  
Spacer Layer ◽  
Good Contact ◽  
The Relationship ◽  
Lower Contact

Considerable amount of work has been done in studying the relationship between the contact resistance and the microstructure of the Au-Ge-Ni based ohmic contacts to n-GaAs. It has been found that the lower contact resistivity is due to the presence of Ge rich and Au free regions (good contact area) in contact with GaAs. Thus in order to obtain an ohmic contact with lower contact resistance one should obtain a uniformly alloyed region of good contact areas almost everywhere. This can possibly be accomplished by utilizing various alloying schemes. In this work microstructural characterization, employing TEM techniques, of the sequentially deposited Au-Ge-Ni based ohmic contact to the MODFET device is presented.The substrate used in the present work consists of 1 μm thick buffer layer of GaAs grown on a semi-insulating GaAs substrate followed by a 25 Å spacer layer of undoped AlGaAs.

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