Fabrication and characterization of a Au/PMMA/Sb metal-organic insulator-semiconductor junction

2014 ◽  
Author(s):  
M. C. Bandeira ◽  
J. G. Guimarães
Author(s):  
Woo C. Kim ◽  
Alexis R. Abramson ◽  
Scott T. Huxtable ◽  
Arun Majumdar ◽  
Yiying Wu ◽  
...  

This study reports on the fabrication and characterization of two prototype thermoelectric devices constructed of either silicon (Si) or bismuth telluride (Bi2Te3) nanowire arrays. The growth mechanisms and fabrication procedures of the Si and Bi2Te3 devices are different as described in this paper. To characterize the thermoelectric device components, current-voltage (I-V) characteristics were first used to estimate their performance. For the Si device, the I-V characteristics suggest ohmic contacts at the metal-semiconductor junction. For the Bi2Te3 device, the I-V characteristics curve showed a rectifying contact. Either low doping of the Bi2Te3 or surface contamination, i.e. native oxide, may cause the rectifying contact. The reversible Peltier effects occurring within the Si device were analyzed using a micro-thermocouple. Results indicated possible limitations of using Si nanowire arrays for the thermoelectric device.


2006 ◽  
Vol 11-12 ◽  
pp. 291-294
Author(s):  
Teresa L.Y. Cheung ◽  
Dickon H.L. Ng

Biomorphic SiO2/C and SiC/C composites containing SiO2 nanorods and SiC nanowires, respectively, with natural wood structure maintained in the final products were fabricated by a simple and low cost method. Freshly cut Luk bamboo was used as the starting material and was converted to charcoal bio-templates by pyrolysis. Infiltration of Si-containing metal-organic solution was then conducted by soaking the bio-templates into the solution for a few days. Finally, by high temperature annealing, biomorphic composites were produced. It was found that C, SiC, and SiO2 micron-sized spheres or nanorods, depending on the annealing duration, were present in the samples annealed at 1200°C; whereas only C, and SiC nanowires were present in the samples annealed at 1400°C.


Sign in / Sign up

Export Citation Format

Share Document