Dynamic Modeling and Electrical Characterization of a Heaving Hybrid Triboelectric-Electromagnetic Energy Harvester

2018 ◽  
Author(s):  
Zia Saadatnia ◽  
Ebrahim Esmailzadeh ◽  
Hani E. Naguib
Keyword(s):  
Energy Harvester ◽  
Mechanical Energy ◽  
Electrical Characterization ◽  
Electrical Performance ◽  
System Response ◽  
Free Standing ◽  
Energy Harvesters ◽  
Output Performance ◽  
Output Characteristics

In this study the dynamic and electrical performance of a novel hybrid Electromagnetic-Triboelectric energy harvester is studied. The mechanism incorporates a linear tubular electromagnetic (EMG) transducer as well as a free-standing grating triboelectric (TENG) transducer. The heaving of the slider inside the stator triggers both EMG and TENG which results in electricity generation. The dynamic model of the system is firstly developed and the system response under external excitation is carried out. Then, the electrical output characteristics of each harvesting unit are developed based on the dynamic response. Then, the effects of various parameters such as frequency of excitation and external electrical load on the output performance of the harvester including voltage, current, and power density of the EMG and TENG units are investigated. This study provides a guideline toward the design and analysis of novel mechanical energy harvesters.

Performance analysis of a lever piezoelectric energy harvester for roadway applications

2021 ◽  
pp. 1045389X2110014
Author(s):  
Guangya Ding ◽  
Hongjun Luo ◽  
Jun Wang ◽  
Guohui Yuan
Keyword(s):  
Output Power ◽  
Energy Harvester ◽  
Open Circuit ◽  
Traffic Load ◽  
Energy Harvesters ◽  
Speed Sensor ◽  
Piezoelectric Energy ◽  
Optimal Load ◽  
Self Powered ◽  
Output Characteristics

A novel lever piezoelectric energy harvester (LPEH) was designed for installation in an actual roadway for energy harvesting. The model incorporates a lever module that amplifies the applied traffic load and transmits it to the piezoelectric ceramic. To observe the piezoelectric growth benefits of the optimized LPEH structure, the output characteristics and durability of two energy harvesters, the LPEH and a piezoelectric energy harvester (PEH) without a lever, were measured and compared by carrying out piezoelectric performance tests and traffic model experiments. Under the same loading condition, the open circuit voltages of the LPEH and PEH were 20.6 and 11.7 V, respectively, which represents a 76% voltage increase for the LPEH compared to the PEH. The output power of the LPEH was 21.51 mW at the optimal load, which was three times higher than that of the PEH (7.45 mW). The output power was linearly dependent on frequency and load, implying the potential application of the module as a self-powered speed sensor. When tested during 300,000 loading cycles, the LPEH still exhibited stable structural performance and durability.

scholarly journals Structural Characterization of Movpe Grown Algan/Gan for Hemt Formation

2018 ◽  
Vol 57 (1) ◽  
pp. 72-81 ◽  
Author(s):  
V.N. Popok ◽  
T.S. Aunsborg ◽  
R.H. Godiksen ◽  
P.K. Kristensen ◽  
R.R. Juluri ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Charge Carrier Concentration ◽  
Electrical Performance ◽  
Clear Understanding ◽  
Si Substrates ◽  
Transfer Of Technology ◽  
Dislocation Densities ◽  
Unusual Phenomenon ◽  
Aln Buffer

Abstract Results on structural, compositional, optical and electrical characterization of MOVPE grown AlGaN/GaN heterostructures with focus on understanding how the AlN buffer synthesis affects the top films are reported. The study demonstrates very good correlation between different methods providing a platform for reliable estimation of crystalline quality of the AlGaN/GaN structures and related to that electrical performance which is found to be significantly affected by threading dislocations (TD): higher TD density reduces the electron mobility while the charge carrier concentration is found to be largely unchanged. The attempt to vary the ammonia flow during the AlN synthesis is found not to affect the film composition and dislocation densities in the following heterostructures. An unusual phenomenon of considerable diffusion of Ga from the GaN film into the AlN buffer is found in all samples under the study. The obtained results are an important step in optimization of AlGaN/GaN growth towards the formation of good quality HEMT structures on sapphire and transfer of technology to Si substrates by providing clear understanding of the role of synthesis parameter on structure and composition of the films.

scholarly journals Development and Validation of an Enhanced Coupled-Field Model for PZT Cantilever Bimorph Energy Harvester

2013 ◽  
Vol 2013 ◽  
pp. 1-10 ◽  
Author(s):  
Long Zhang ◽  
Keith A. Williams ◽  
Zhengchao Xie
Keyword(s):  
Energy Harvester ◽  
Field Model ◽  
Mechanical Energy ◽  
Electrical Energy ◽  
Open Circuit ◽  
Conservation Of Energy ◽  
Energy Harvesters ◽  
Piezoelectric Energy ◽  
Comparison Results ◽  
Coupled Field

The power source with the limited life span has motivated the development of the energy harvesters that can scavenge the ambient environment energy and convert it into the electrical energy. With the coupled field characteristics of structure to electricity, piezoelectric energy harvesters are under consideration as a means of converting the mechanical energy to the electrical energy, with the goal of realizing completely self-powered sensor systems. In this paper, two previous models in the literatures for predicting the open-circuit and close-circuit voltages of a piezoelectric cantilever bimorph (PCB) energy harvester are first described, that is, the mechanical equivalent spring mass-damper model and the electrical equivalent circuit model. Then, the development of an enhanced coupled field model for the PCB energy harvester based on another previous model in the literature using a conservation of energy method is presented. Further, the laboratory experiments are carried out to evaluate the enhanced coupled field model and the other two previous models in the literatures. The comparison results show that the enhanced coupled field model can better predict the open-circuit and close-circuit voltages of the PCB energy harvester with a proof mass bonded at the free end of the structure in order to increase the energy-harvesting level of the system.

Structural and Electrical Characterization of Doped Zirconia Nanostructured Fibres

2012 ◽  
Vol 545 ◽  
pp. 285-289
Author(s):  
Adrian Lowe ◽  
Deborah Eve Kho Siu Chu ◽  
Li Lu
Keyword(s):  
Grain Size ◽  
Electrical Characterization ◽  
Electrospinning Process ◽  
Electrical Performance ◽  
Energy Storage Materials ◽  
Impedance Response ◽  
Average Grain Size ◽  
Tetragonal Form ◽  
Cv Measurements

Pure and lithium-doped zirconia fibres have been produced using the electrospinning process. These fibres are seen to be mesoporous in nature and possess a dense outer skin that correlates with the existance of tetragonal structure. This tetragonal form exists in materials below a certain average grain size and also correlates well with capacitance retention, CV measurements and impedance response. During electrical performance, an initial irreversible solid electrolyte interface is believed to form and average grain size has a significant effect. This study suggests that in this mesoporous/skin form, electrospun zirconia fibres are promising energy storage materials.

Modeling and Electrical Characterization of a Cantilever Beam for Mechanical Energy Harvesting

2018 ◽  
Author(s):  
Thien Hoang ◽  
Maxime Bavencoffe ◽  
Guillaume Ferin ◽  
Franck Levassort ◽  
Claire Bantignies ◽  
...  
Keyword(s):  
Energy Harvesting ◽  
Cantilever Beam ◽  
Mechanical Energy ◽  
Electrical Characterization

Flexible hybrid piezo/triboelectric energy harvester with high power density workable at elevated temperatures

2020 ◽  
Vol 8 (24) ◽  
pp. 12003-12012 ◽  
Author(s):  
Yanhua Sun ◽  
Yun Lu ◽  
Xiaoning Li ◽  
Zheyin Yu ◽  
Shujun Zhang ◽  
...  
Keyword(s):  
Power Density ◽  
High Power ◽  
Energy Harvester ◽  
Elevated Temperatures ◽  
Mechanical Energy ◽  
Broad Temperature Range ◽  
High Power Density ◽  
Temperature Range ◽  
Energy Harvesters ◽  
High Output

Eco-friendly energy harvesters with high output for effectively harvesting mechanical energy over a broad temperature range.

scholarly journals Electrical Characterization of Conductive Threads for Textile Electronics

Electronics ◽  
2021 ◽  
Vol 10 (8) ◽  
pp. 967
Author(s):  
Adrian K. Stavrakis ◽  
Mitar Simić ◽  
Goran M. Stojanović
Keyword(s):  
Internet Of Things ◽  
Electronic Devices ◽  
Electrical Characterization ◽  
Maximum Power ◽  
Electrical Performance ◽  
Microscopic Scale ◽  
Mass Public ◽  
Power Handling ◽  
New Devices

In recent years, advancements in technology are constantly driving the miniaturization of electronic devices, not only in the renowned domain of Internet-of-Things but also in other fields such as that of flexible and textile electronics. As the latter forms a great ecosystem for new devices, that could be functional such as heating garments or sensory, many suppliers have already started producing and bringing to market conductive threads that can be used by researchers and the mass public for their work. However, to date, no extensive characterization has been carried out with respect to the electrical performance of such threads and that is what this article is aiming to amend. Four commercially available threads by two different suppliers were put under test, to establish their limitations in terms of maximum power handling, both continuous and instantaneous. They were subsequently examined at a microscopic scale as well, to verify any potential caveats in their design, and any hidden limitations. A preliminary profile for each of the four threads was successfully established.

scholarly journals A high electrical performance of DG-MOSFET transistors in 4H-SiC and 6H-SiC 130 nm technology by BSIM3v3 model

2019 ◽  
Vol 70 (2) ◽  
pp. 145-151
Author(s):  
Mourad Hebali ◽  
Menaouer Bennaoum ◽  
Mohammed Berka ◽  
Abdelkader Baghdad Bey ◽  
Mohammed Benzohra ◽  
...  
Keyword(s):  
Low Power ◽  
Low Voltage ◽  
Electrical Characterization ◽  
Electrical Performance ◽  
Subthreshold Slope ◽  
Ultra Low Power ◽  
Dg Mosfet ◽  
Subthreshold Operation ◽  
Very High

Abstract In this paper, the electrical performance of double gate DG-MOSFET transistors in 4H-SiC and 6H-SiC technologies have been studied by BSIM3v3 model. In which the I–V and gm–V characteristics and subthreshold operation of the DGMOSFET have been investigated for two models (series and parallel) based on equivalent electronic circuits and the results so obtained are compared with the single gate SG-MOSFET, using 130 nm technology and OrCAD PSpice software. The electrical characterization of DG-MOSFETs transistors have shown that they operate under a low voltage less than 1.2 V and low power for both models like the SG-MOSFET transistor, especially the series DG-MOSFET transistor is characterized by an ultra low power. The different transistors are characterized by an ultra low OFF leakage current of pA order, very high ON/OFF ratio of and high subthreshold slope of order 0.1 V/dec for the transistors in 6H-SiC and 4H-SiC respectively. These transistors also proved higher transconductance efficiency, especially the parallel DG-MOSFET transistor.

Electrical characterization of TSVs with varying process knobs and temporary bond/adhesive system robustness studies for 2.5D/3D manufacturing

2013 ◽  
Vol 2013 (1) ◽  
pp. 000233-000233
Author(s):  
Niranjan Kumar
Keyword(s):  
Electrical Parameter ◽  
Electrical Characterization ◽  
Adhesive System ◽  
Parameter Extraction ◽  
Electrical Performance ◽  
Process Window ◽  
Film Properties ◽  
Wafer Processing ◽  
The Impact

TSVs are used to carry power/ground and signals straight to the heart of the logic/memory devices where all the intricate and busy architectures lie. I consider it like the downtown area inside a city where the real estate is more expensive and requires intricate design and execution. As a result in case of the TSVs, there is no room for electrical degradation and stress interaction with transistor devices (keep out zone). The Cu protrusion, it's interaction with the intricate local interconnects (M1 and below structures), the current leakage, capacitance, reliability, become highly critical to fully achieve the power per watt advantage of the TSVs. As a result, a thorough electrical characterization of TSVs with varying film properties and the process window becomes very critical for integration with the 20nm node (and below) devices. In this paper we will discuss implementation of modified oxide liner, barrier/seed, ECD fill and CMP of films to achieve robust TSVs for electrical parameter extraction. We will closely examine the impact of these film properties on the electrical performance and its repeatability to achieve wide process windows. Such studies are expected to improve manufacturing yields of TSV product wafers at fabs/foundries. Alternately, we will present detailed metrology studies of two temporary bond method/adhesive systems as it progresses through the thin wafer downstream processes (via-reveal processes). This exercise is targeted to address productivity and yield challenges with thin wafer processing (backside via-reveal process). We will attempt to demonstrate a robust temporary bond/adhesive system that exhibits no thin wafer damage/wrinkling and no edge profile degradation issues over repeated runs (production like). This study will help to characterize the adhesive and low temperature passivation film interfaces in details to support the thin wafer processing robustness for TSV manufacturing.

Sign in / Sign up

Export Citation Format

Share Document