Effect of Elastic Accommodation on Diffusion-Controlled Cavity Growth in Metals

2000 ◽  
Vol 122 (3) ◽  
pp. 294-299
Author(s):  
R. Mohan ◽  
J. Zhang ◽  
F. W. Brust
Keyword(s):  
Grain Boundary ◽  
Growth Rates ◽  
Void Growth ◽  
Boundary Diffusion ◽  
Virtual Work ◽  
Cell Model ◽  
Cavity Growth ◽  
Grain Boundary Diffusion ◽  
Transient Time ◽  
Diffusion Controlled

The effect of elastic accommodation on the grain boundary diffusion-controlled void growth was analyzed using an axisymmetric unit cell model. An incremental form of the virtual work principle was used to formulate the boundary value problem involving grain boundary diffusion. The model accounts for material elasticity and void interaction effects. Analyses are performed for initially spherical voids spaced periodically along the grain boundary. The results of the analyses on void growth rates agree well with the Hull-Rimmer model after the initial transient time. During the elastic transient, void growth rates can be several orders of magnitude higher than the steady state growth rate. Though the elastic transient time may occupy a small portion of the total rupture time, in metallic components experiencing cyclic loading conditions with short hold times, elasticity effects may be important. [S0094-4289(00)00903-8]

The Effect of a Passivation Over-Layer on Tile Mechanisms of Stress Relaxation in Continuous Films and Narrow Lines of Aluminum

1991 ◽  
Vol 225 ◽  
Author(s):  
C. A. Paszkiet ◽  
M. A. Korhonen ◽  
Che-Yu Li
Keyword(s):  
Stress Relaxation ◽  
Grain Boundary ◽  
Void Growth ◽  
Boundary Diffusion ◽  
Grain Boundary Diffusion ◽  
Diffusion Controlled

ABSTRACTStress relaxation was studied in bare and nitride-covered continuous films and narrow lines of aluminum. The rate of relaxation in unpassivated metallizations is shown to be consistent with a dislocation-controlled mechanism. Relaxation in passivated lines appears to depend on grain boundary diffusion-controlled void growth. In passivated continuous films, two rate-controlling mechanisms appear to operate in sequence.

The Effect of A Passivation Over-Layer on the Mechanisms of Stress Relaxation in Continuous Films and Narrow Lines of Aluminum

1991 ◽  
Vol 226 ◽  
Author(s):  
C. A. Paszkiet ◽  
M. A. Korhonen ◽  
Che-Yu Li
Keyword(s):  
Stress Relaxation ◽  
Grain Boundary ◽  
Void Growth ◽  
Boundary Diffusion ◽  
Grain Boundary Diffusion ◽  
Diffusion Controlled

AbstractStress relaxation was studied in bare and nitride-covered continuous films and narrow lines of aluminum. The rate of relaxation in unpassivated metallizations is shown to be consistent with a dislocation-controlled mechanism. Relaxation in passivated lines appears to depend on grain boundary diffusion-controlled void growth. In passivated continuous films, two rate-controlling mechanisms appear to operate in sequence.

Void Growth Behavior in ULSI Cu Interconnections by Grain-Boundary Diffusion Simulation

2010 ◽  
Vol 39 (10) ◽  
pp. 2255-2266
Author(s):  
Takashi Onishi ◽  
Masao Mizuno ◽  
Tetsuya Yoshikawa ◽  
Jun Munemasa ◽  
Takao Inoue ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Void Growth ◽  
Boundary Diffusion ◽  
Growth Behavior ◽  
Grain Boundary Diffusion ◽  
Diffusion Simulation

scholarly journals Determination of Grain Boundary Diffusion Coefficients in C-Regime by Hwang-Balluffi Method: Silver Diffusion in Pd

2009 ◽  
Vol 289-292 ◽  
pp. 763-767 ◽  
Author(s):  
Z. Balogh ◽  
Z. Erdélyi ◽  
Dezső L. Beke ◽  
Alain Portavoce ◽  
Christophe Girardeaux ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Diffusion Coefficients ◽  
Boundary Diffusion ◽  
Grain Boundary Diffusion ◽  
Controlled Processes ◽  
Diffusion Controlled ◽  
Arrhenius Function ◽  
Data Points ◽  
Accumulation Kinetics

Diffusion controlled processes play a crucial role in the degradation of technical materials. At low temperatures the most significant of them is the diffusion along grain boundaries. In thin film geometry one of the best methods for determining the grain boundary (GB) diffusion coefficient of an impurity element is the Hwang-Balluffi method, in which a surface sensitive technique is used to follow the surface accumulation kinetics. Results of grain boundary diffusion measurements, carried out in our laboratory by this method in three different materials systems (Ag/Pd, Ag/Cu and Au/Ni) are reviewed. In case of Ag diffusion along Pd GBs the surface accumulation was followed by AES method. The data points can be well fitted by an Arrhenius function with an activation energy Q=0.99eV

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