Interfacial Compounds Characteristic and Its Reliability Effects on SAC305 Microjoints in Flip Chip Assemblies

2018 ◽  
Vol 140 (3) ◽  
Author(s):  
Ye Tian ◽  
Ning Ren ◽  
Xiaoxia Jian ◽  
Tie Geng ◽  
Yiping Wu

This study mainly focuses on site effects of the Ni pad interface on intermetallic compounds (IMCs) characteristic during assembly reflowing, and attempts to provide a reasonable explanation for this particular finding. Besides, the changes of the resulting IMCs characteristic are characterized during thermal shock (TS) cycling, and their potential influences on thermal–mechanical reliability of microjoints are evaluated experimentally and numerically. The results show that the site on the Ni pad interface of silicon chip has great influence on interfacial reaction products, i.e., interfacial IMCs. After bumps soldering, a great amount of larger diamond-shaped (Cu, Ni)6Sn5 compounds were densely packed at the edge region, while some smaller ones were only scattered at the center region. Moreover, substantial particle-shaped (Ni, Cu)3Sn4 compounds as well as some rod-shaped ones emerged at the spaces between the (Cu, Ni)6Sn5 compounds of the center region. More importantly, such site effects were remained in the microjoints during TS cycling, which induced the formation of larger protruding (Cu, Ni)6Sn5 compounds. Finite element (FE) simulation results showed that the stress was mainly concentrated at the top of the protruding (Cu, Ni)6Sn5 compounds, which can be a critical reason to cause the crack occurrence. Furthermore, the underlying mechanism of the interfacial IMCs characteristic induced by the site effects was attempted to propose during bumps soldering.

Coatings ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 840
Author(s):  
Da Huang ◽  
Weifeng He ◽  
Xin Cao ◽  
Yang Jiao

In this study, the anti-impact performance of the TiN coatings prepared under various substrate temperatures (35, 200, 400, and 600 °C) were evaluated using a cyclic impact tester under 104 cycles. Moreover, the microstructure and anti-impact performance-related mechanical properties (adhesion strength and nano-hardness) were investigated to reveal the underlying mechanism of how the substrate temperature affects the anti-impact performance of the coatings. The results showed that the substrate temperature has a great influence on the internal stress, nano-hardness, and adhesion strength as well as the anti-impact performance of TiN coatings, and the coatings prepared under 400 °C exhibit the best impact resistance. The small internal stress, strong adhesion strength as well as high hardness and H3/E2 value for the 400 °C prepared coatings are the main contributes.


2004 ◽  
Vol 126 (2) ◽  
pp. 202-207 ◽  
Author(s):  
Woon-Seong Kwon ◽  
Hyoung-Joon Kim ◽  
Kyung-Wook Paik ◽  
Se-Young Jang ◽  
Soon-Min Hong

Interface degradation between dissimilar materials in the flip chip packages with anisotropic conductive adhesive joint is susceptible to mechanical and electrical failure upon temperature cycling. Particularly the mechanical reliability of flip chip using anisotropic conductive films (ACFs) often depends upon the interface characteristics between the bumping/passivation dielectrics and adjacent materials. This paper investigates the delamination and cracking in polymeric bumping/passivation dielectrics (Cyclotene™ 4024) and the damage mechanism of interconnect bump with BCB bumping dielectrics upon temperature cycling. Adhesion and fracture surface morphology after die shear testing show that the weakening and delamination of BCB passivation layer at the die corner is the main cause of the reduction of die adhesion strength after the thermal cycling. The sliding trace on fracture surface after three-point bending fracture reveals that cyclic shear displacement in a polymeric BCB layer fatigue the interface bonding or interconnect bump upon thermal cycling, leading to mechanical delamination and functional bump failure. Passivation cracks also develop around the circumference of BCB passivation over aluminum pad. A model is presented for the degradation of interconnect bump with surrounding BCB passivation.


2016 ◽  
Vol 57 (11) ◽  
pp. 1966-1971
Author(s):  
Sang Su Ha ◽  
Hanbyul Kang ◽  
Gun Rae Kim ◽  
Sangwoo Pae ◽  
Haebum Lee

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