scholarly journals Erratum: “Four-Wire Bridge Measurements of Silicon van der Pauw Stress Sensors” [ASME J. Electron. Packag., 2014, 136(4), p. 041014; DOI: 10.1115/1.4028333]

2018 ◽  
Vol 140 (1) ◽  
Author(s):  
Richard C. Jaeger ◽  
Mohammad Motalab ◽  
Safina Hussain ◽  
Jeffrey C. Suhling
Keyword(s):  
Stress Sensors ◽  
Van Der Pauw

Design and Calibration of Resistive Stress Sensors on 4H Silicon Carbide

2018 ◽  
Author(s):  
Richard C. Jaeger ◽  
Jun Chen ◽  
Jeffrey C. Suhling ◽  
Leonid Fursin
Keyword(s):  
Silicon Carbide ◽  
Integrated Circuits ◽  
Stress Sensitivity ◽  
Well Drilling ◽  
Deep Well ◽  
Stress Sensors ◽  
Wide Range ◽  
Higher Temperature ◽  
Van Der Pauw ◽  
Transverse Piezoresistance

Stress sensors have shown potential to provide “health monitoring” of a wide range of issues related to packaging of integrated circuits, and silicon carbide offers the advantage of much higher temperature sensor operation with application in packaged high-voltage, high-power SiC devices as well as both automotive and aerospace systems, geothermal plants, and deep well drilling, to name a few. This paper discusses the theory and uniaxial calibration of resistive stress sensors on 4H silicon carbide (4H-SiC) and provides new theoretical descriptions for four-element resistor rosettes and van der Pauw (VDP) stress sensors. The results delineate the similarities and differences relative to those on (100) silicon: resistors on the silicon face of 4H-SiC respond to only four of the six components of the stress state; a four-element rosette design exists for measuring the in-plane stress components; two stress quantities can be measured in a temperature compensated manner. In contrast to silicon, only one combined coefficient is required for temperature compensated stress measurements. Calibration results from a single VDP device can be used to calculate the basic lateral and transverse piezoresistance coefficients for 4H-SiC material. Experimental results are presented for lateral and transverse piezoresistive coefficients for van der Pauw structures and p- and n-type resistors. The VDP devices exhibit the expected 3.16 times higher stress sensitivity than standard resistor rosettes.

Four-Wire Bridge Measurements of Silicon van der Pauw Stress Sensors

2014 ◽  
Vol 136 (4) ◽  
Author(s):  
Richard C. Jaeger ◽  
Mohammad Motalab ◽  
Safina Hussain ◽  
Jeffrey C. Suhling
Keyword(s):  
Integrated Circuits ◽  
Hall Effect ◽  
Output Voltage ◽  
Mathematical Expression ◽  
Plane Shear ◽  
Plane Normal ◽  
Offset Voltage ◽  
Stress Sensors ◽  
Van Der Pauw ◽  
The Difference

Under the proper orientations and excitations, the transverse output of rotationally symmetric four-contact van der Pauw (VDP) stress sensors depends upon only the in-plane shear stress or the difference of the in-plane normal stresses on (100) silicon. In bridge-mode, each sensor requires only one four-wire measurement and produces an output voltage with a sensitivity that is 3.16 times that of the equivalent resistor rosettes or bridges, just as in the normal VDP sensor mode that requires two separate measurements. Both numerical and experimental results are presented to validate the conjectured behavior of the sensor. Similar results apply to sensors on (111) silicon. The output voltage results provide a simple mathematical expression for the offset voltage in Hall effect devices or the response of pseudo Hall-effect sensors. Bridge operation facilitates use of the VDP structure in embedded stress sensors in integrated circuits.

Packaging Induced Die Stress Characterization Using van der Pauw Sensors Between −180°C and 80°C

2014 ◽  
Vol 2014 (1) ◽  
pp. 000483-000487
Author(s):  
Uday S. Goteti ◽  
Francy J. Akkara ◽  
Richard C. Jaeger ◽  
Michael C. Hamilton ◽  
Jeffrey C. Suhling
Keyword(s):  
Finite Element ◽  
Finite Element Simulation ◽  
Temperature Effects ◽  
Temperature Range ◽  
Stress Sensors ◽  
Element Simulation ◽  
Die Stress ◽  
Simulation Results ◽  
Van Der Pauw

Packaging-induced die-stresses due to temperature effects on various materials of the package are characterized using piezoresistive van der Pauw stress sensors over a temperature range of −180° C to 80° C. Piezo-resistive coefficients extracted previously are then used to obtain a mapping between change in resistance and corresponding stress at all tested temperatures. The obtained values of stress are compared with finite element simulation results.

Four-Wire Bridge Measurements of van der Pauw Stress Sensors on (100) and (111) Silicon

2013 ◽  
Author(s):  
Richard C. Jaeger ◽  
Mohammad Motalab ◽  
Safina Hussain ◽  
Jeffrey C. Suhling
Keyword(s):  
Shear Stress ◽  
Normal Stress ◽  
Normal Stress Difference ◽  
Stress Difference ◽  
Plane Shear ◽  
Plane Normal ◽  
Stress Sensors ◽  
Van Der Pauw ◽  
Contact Sensors

Four-wire resistance characterization of van der Pauw stress sensors is discussed. Under the proper orientations and excitations, the output of the four-contact sensors can be shown to depend upon only the in-plane shear stress or the in-plane normal stress difference on (100) silicon. The other stress terms are cancelled out by the symmetry of the structure, and the measurements are inherently temperature compensated. In bridge-mode, each sensor requires only one measurement and produces an output voltage that is directly proportional to the shear stress or in-plane normal stress difference, and the sensitivity is 3.16 times that of the equivalent resistor sensors, just as in the normal van der Pauw mode. Experimental, theoretical, finite-difference and finite-element and simulation results are presented demonstrating the behavior of the sensor. The two sensors can be merged into one eight-contact device, or n- and p-tye sensors can be overlaid in standard IC processes. Similar results apply to sensors on (111) silicon.

Diagonal Mode van der Pauw Stress Sensors: Proof of Diagonal-Mode Conjecture

2018 ◽  
Vol 140 (4) ◽  
Author(s):  
Richard C. Jaeger ◽  
Jeffrey C. Suhling ◽  
Jun Chen
Keyword(s):  
Experimental Confirmation ◽  
Stress Sensors ◽  
Impedance Parameter ◽  
Simulation Results ◽  
Van Der Pauw

The conjecture discussed in our previous paper [Jaeger, R. C., Motalab, M., Hussain, S., and Suhling, J. C., 2014, “Four-Wire Bridge Measurements of Silicon van der Pauw Stress Sensors,” ASME J. Electron. Packag., 136(4), p. 041014; Jaeger, R. C., Motalab, M., Hussain, S., and Suhling, J. C., 2018, Erratum: “Four-Wire Bridge Measurements of Silicon van der Pauw Stress Sensors,” ASME J. Electron. Packag., 140(1), p. 017001] was backed up by measurements and simulation results, but not mathematically proven. A proof based upon two-port impedance parameter reciprocity is presented with additional experimental confirmation.

Microfabricated shear stress sensors. I - Design and fabrication

AIAA Journal ◽  
1999 ◽  
Vol 37 ◽  
pp. 66-72
Author(s):  
Tao Pan ◽  
Daniel Hyman ◽  
Mehran Mehregany ◽  
Eli Reshotko ◽  
Steven Garverick
Keyword(s):  
Shear Stress ◽  
Stress Sensors ◽  
Shear Stress Sensors

Organelle Stress Sensors and Cell Death Mechanisms in Neurodegenerative Diseases

2010 ◽  
Vol 9 (6) ◽  
pp. 679-692 ◽  
Author(s):  
Ricardo J.S. Viana ◽  
Maria B. Fonseca ◽  
Rita M. Ramalho ◽  
Ana F. Nunes ◽  
Cecilia M.P. Rodrigues
Keyword(s):  
Cell Death ◽  
Neurodegenerative Diseases ◽  
Stress Sensors ◽  
Cell Death Mechanisms

Feedback control to delay or advance linear loss of stability in planar Poiseuille flow

1994 ◽  
Vol 447 (1930) ◽  
pp. 299-312 ◽  
Keyword(s):  
Feedback Control ◽  
Poiseuille Flow ◽  
Control Strategies ◽  
Linear Stability Theory ◽  
Flow Instabilities ◽  
Loss Of Stability ◽  
Stress Sensors ◽  
Shear Stress Sensors ◽  
Linear Loss ◽  
Adjacent Wall

By using linear stability theory, we demonstrate theoretically that the critical Reynolds number for the loss of stability of planar Poiseuille flow can be significantly increased or decreased through the use of feedback control strategies which enhance or suppress disturbance dissipating mechanisms in the flow. The controller studied here consists of closely packed, wall mounted, shear stress sensors and thermoelectric actuators. The sensors detect flow instabilities and direct the actuators to alter the fluid’s viscosity by modulating the adjacent wall temperature in such a way as to suppress or enhance flow instabilities. Results are presented for water and air flows.

CMOS stress sensors on [100] silicon

2000 ◽  
Vol 35 (1) ◽  
pp. 85-95 ◽  
Author(s):  
R.C. Jaeger ◽  
J.C. Suhling ◽  
R. Ramani ◽  
A.T. Bradley ◽  
Jianping Xu
Keyword(s):  
Stress Sensors
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