Plasma Assisted Chemical Vapor Deposition of Aluminum For Metallization In Ulsi

1996 ◽  
Vol 427 ◽  
Author(s):  
Dong-Chan Kim ◽  
Young-Soung Kim ◽  
Seung-Ki Joo
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Integrated Circuits ◽  
Vapor Deposition ◽  
Large Scale ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Thermal Cvd ◽  
Dimethylethylamine Alane

AbstractAn aluminum thin film for ultra large scale integrated circuits(ULSI) metalization has been formed by PACVD using DMEAA(Dimethylethylamine alane) as a precursor. The selectivity was lost but the conformal step coverage was still maintained when the hydrogen plasma was added to conventional CVD process so that perfectly planarized metalization could be obtained.Comparing to thermal CVD, the reflectivity as well as the resistivity could be much improved especially when the film was deposited on SiO2. The deposition rate and the resistivity of PACVD Al thin films deposited on various substrates such as Si, TiN and SiO2 were compared with those of thermal CVD Al thin films.

scholarly journals Large scale structures in chemical vapor deposition-grown graphene on Ni thin films

2020 ◽  
Vol 709 ◽  
pp. 138225
Author(s):  
Derya Ataç ◽  
Johnny G.M. Sanderink ◽  
Sachin Kinge ◽  
Dirk J. Gravesteijn ◽  
Alexey Y. Kovalgin ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Large Scale ◽  
Chemical Vapor ◽  
Large Scale Structures ◽  
Scale Structures ◽  
Grown Graphene

Nucleation And Growth of Yttria-Stabilized Zirconia Thin Films Using Combustion Chemical Vapor Deposition

2002 ◽  
Vol 756 ◽  
Author(s):  
Zhigang Xu ◽  
Jag Sankar ◽  
Sergey Yarmolenko ◽  
Qiuming Wei
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Nucleation Rate ◽  
Vapor Deposition ◽  
Liquid Fuel ◽  
Structural Evolution ◽  
Chemical Vapor ◽  
Total Metal ◽  
Vapor Deposition Technique

ABSTRACTLiquid fuel combustion chemical vapor deposition technique was successfully used for YSZ thin film processing. The nucleation rates were obtained for the samples processed at different temperatures and total-metal-concentrations in the liquid fuel. An optimum substrate temperature was found for the highest nucleation rate. The nucleation rate was increased with the total-metal-concentration. Structural evolution of the thin film in the early processing stage was studied with regard to the formation of nuclei, crystallites and final crystals on the films. The films were found to be affected by high temperature annealing. The crystals and the thin films were characterized with scanning electron microscopy.

scholarly journals Performance Improvement of Microcrystalline p-SiC/i-Si/n-Si Thin Film Solar Cells by Using Laser-Assisted Plasma Enhanced Chemical Vapor Deposition

2014 ◽  
Vol 2014 ◽  
pp. 1-5
Author(s):  
Hsin-Ying Lee ◽  
Ting-Chun Wang ◽  
Chun-Yen Tseng
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Laser Power ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Thin Film Solar Cells ◽  
Si Films ◽  
Si Thin Film

The microcrystalline p-SiC/i-Si/n-Si thin film solar cells treated with hydrogen plasma were fabricated at low temperature using a CO2laser-assisted plasma enhanced chemical vapor deposition (LAPECVD) system. According to the micro-Raman results, the i-Si films shifted from 482 cm−1to 512 cm−1as the assisting laser power increased from 0 W to 80 W, which indicated a gradual transformation from amorphous to crystalline Si. From X-ray diffraction (XRD) results, the microcrystalline i-Si films with (111), (220), and (311) diffraction were obtained. Compared with the Si-based thin film solar cells deposited without laser assistance, the short-circuit current density and the power conversion efficiency of the solar cells with assisting laser power of 80 W were improved from 14.38 mA/cm2to 18.16 mA/cm2and from 6.89% to 8.58%, respectively.

MWCNTs - Ni-Cu NPs @ a-C:H thin films: Study of relation between the average diameters of CNTs with optical density and topological characterizations

2020 ◽  
Author(s):  
Samira Goudarzi ◽  
Vali Dalouji
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Optical Density ◽  
Vapor Deposition ◽  
High Spatial Frequency ◽  
Chemical Vapor ◽  
High Energy ◽  
Rf Plasma ◽  
Minimum Value

Abstract In this paper, Ni-Cu NPs @ a-C:H thin films with different content of cooper by co-deposition of RF-sputtering and RF-plasma enhanced chemical vapor deposition (RF-PECVD) were prepared from acetylene gas and Ni and Cu targets. The prepared samples as catalysts for growing multi-wall carbon nanotubes (MWCNTs) were used from liquid petroleum gas (LPG) by thermal chemical vapor deposition (TCVD) at 825 °C. The films deposited with 5% Cu have minimum value the average diameter of CNTs and were about 100 nm. The fractal dimensions and structural characteristics as well as optical density of Ni-Cu NPs thin films have been investigated. AFM images can estimate the lateral size of the nanoparticles on the films surface. These values for Ni NPs without Cu NPs @ a-C:H thin film and with Cu NPs thin film contenting 5%, 40%, 75% Cu are obtained about 7.2, 5.34, 6.04 and 11.16 nm respectively. The optical density (Dopt) of thin films was obtained from the relation Dopt = \alpha t. Films deposited with 75% Cu have maximum value of optical density specially in high energy. The spectral density power of all layers reflects the reverse flow changes,, especially in the high spatial frequency region, indicating the presence of fractal components in prominent topographies. Films deposited with 75% Cu have minimum value of fractal dimension. The diagram of the Bearing Area proportion the height shows the percentage of cavities and single-layers. It can be seen that the single-layer content of all films were about 95%.

Parametric Modeling and Optimization of Chemical Vapor Deposition Process

2008 ◽  
Author(s):  
Po Ting Lin ◽  
Yogesh Jaluria ◽  
Hae Chang Gea
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Parametric Modeling ◽  
Parametric Models ◽  
Modeling And Optimization

This paper focuses on the parametric modeling and optimization of the Chemical Vapor Deposition (CVD) process for the deposition of thin films of silicon from silane in a vertical impinging CVD reactor. The parametric modeling using Radial Basis Function (RBF) for various functions which are related to the deposition rate and uniformity of the thin films are studied. These models are compared and validated with additional sampling data. Based on the parametric models, different optimization formulations for maximizing the deposition rate and the working areas of thin film are performed.

scholarly journals High-performance thin H:SiON OLED encapsulation layer deposited by PECVD at low temperature

RSC Advances ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 58-64 ◽  
Author(s):  
Kyoung Woo Park ◽  
Seunghee Lee ◽  
Hyunkoo Lee ◽  
Yong-Hwan Cho ◽  
Yong Cheon Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
High Performance ◽  
Single Layer ◽  
Chemical Vapor ◽  
Hydrogen Gas ◽  
Layer Thin Film

High-performance H:SiON single layer thin film encapsulation (TFE) was deposited by plasma enhanced chemical vapor deposition (PECVD) method. To control the characteristics of the SiON thin films, hydrogen gas was introduced during PECVD process.

scholarly journals Epitaxial Growth and Bandgap Control of Ni1-xMgxO Thin Film Grown by Mist Chemical Vapor Deposition Method

MRS Advances ◽  
2020 ◽  
Vol 5 (31-32) ◽  
pp. 1705-1712
Author(s):  
Takumi Ikenoue ◽  
Satoshi Yoneya ◽  
Masao Miyake ◽  
Tetsuji Hirato
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Wide Bandgap ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method ◽  
Orientation Relationships ◽  
P Type

ABSTRACTWide-bandgap oxide semiconductors have received significant attention as they can produce devices with high output and breakdown voltage. p-Type conductivity control is essential to realize bipolar devices. Therefore, as a rare wide-bandgap p-type oxide semiconductor, NiO (3.7 eV) has garnered considerable attention. In view of the heterojunction device with Ga2O3 (4.5–5.0 eV), a p-type material with a large bandgap is desired. Herein, we report the growth of a Ni1-xMgxO thin film, which has a larger bandgap than NiO, on α-Al2O3 (0001) substrates that was developed using the mist chemical vapor deposition method. The Ni1-xMgxO thin films epitaxially grown on α-Al2O3 substrates showed crystallographic orientation relationships identical to those of NiO thin films. The Mg composition of Ni1-xMgxO was easily controlled by the Mg concentration of the precursor solution. The Ni1-xMgxO thin film with a higher Mg composition had a larger bandgap, and the bandgap reached 3.9 eV with a Ni1-xMgxO thin film with x = 0.28. In contrast to an undoped Ni1-xMgxO thin film showing insulating properties, the Li-doped Ni1-xMgxO thin film had resistivities of 101–105 Ω∙cm depending on the Li precursor concentration, suggesting that Li effectively acts as an acceptor.

scholarly journals Reactive Chemical Vapor Deposition Method as New Approach for Obtaining Electroluminescent Thin Film Materials

2012 ◽  
Vol 2012 ◽  
pp. 1-9 ◽  
Author(s):  
Valentina V. Utochnikova ◽  
Oxana V. Kotova ◽  
Andrey A. Vaschenko ◽  
Leonid S. Lepnev ◽  
Alexei G. Vitukhnovsky ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Chemical Vapor Deposition Method ◽  
Aromatic Carboxylates ◽  
Terbium Ion

The new reactive chemical vapor deposition (RCVD) method has been proposed for thin film deposition of luminescent nonvolatile lanthanide aromatic carboxylates. This method is based on metathesis reaction between the vapors of volatile lanthanide dipivaloylmethanate (Ln(dpm)3) and carboxylic acid (HCarb orH2Carb′) and was successfully used in case of HCarb. Advantages of the method were demonstrated on example of terbium benzoate (Tb(bz)3) ando-phenoxybenzoate thin films, and Tb(bz)3thin films were successfully examined in the OLED with the following structure glass/ITO/PEDOT:PSS/TPD/Tb(bz)3/Ca/Al. Electroluminescence spectra of Tb(bz)3showed only typical luminescent bands, originated from transitions of the terbium ion. Method peculiarities for deposition of compounds of dibasic acids H2Carb′ are established on example of terbium and europium terephtalates and europium 2,6-naphtalenedicarboxylate.

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