scholarly journals Effect of Indium Content on the Melting Point, Dross, and Oxidation Characteristics of Sn-2Ag-3Bi-xIn Solders

2013 ◽  
Vol 135 (2) ◽  
Author(s):  
Ae-Jeong Jeon ◽  
Seong-Jun Kim ◽  
Sang-Hoon Lee ◽  
Chung-Yun Kang

This paper presents the effect of indium (In) content on the melting temperature, wettabililty, dross formation, and oxidation characteristics of the Sn-2Ag-3Bi-xIn alloy. The melting temperature of the Sn-2Ag-3Bi-xIn alloy (2 ≤ x ≤ 6) was lower than 473 K. The melting range between the solidus and liquidus temperatures was approximately 20 K, irrespective of the indium content. As the indium content increased, the wetting time increased slightly and the maximum wetting force remained to be mostly constant. The dross formation decreased to approximately 50% when adding 1In to Sn-2Ag-3Bi, and no dross formation was observed in the case of Sn-2Ag-3Bi-xIn alloy (x ≥ 1.5) at 523 K for 180 min. Upon approaching the inside of the oxidized solder of the Sn-2Ag-3Bi-1.5In alloy from the surface, the O and In contents decreased and the Sn content increased based on depth profiling analysis using Auger electron spectroscopy (AES). The mechanism for restraining dross (Sn oxidation) of Sn-2Ag-3Bi alloy with addition of indium may be due to surface segregation of indium. This is due to the lower formation energy of indium oxide than those of Sn oxidation.

2019 ◽  
Author(s):  
Samuele Giani ◽  
Naomi M. Towers

Laboratories measuring melting temperature according to USP<741> Melting Range or Temperature, must comply with the amended calibration and adjustment requirements described in this regulation. Compliance is ensured by adjusting the instrument with secondary reference standards, traceable to USP, followed by verification of accuracy using USP primary reference standards.


2014 ◽  
Vol 46 (S1) ◽  
pp. 341-343
Author(s):  
Tae Woon Kim ◽  
Hyun Jeong Baek ◽  
Jong Shik Jang ◽  
Seung Mi Lee ◽  
Kyung Joong Kim

1991 ◽  
Vol 77 (12) ◽  
pp. 2171-2178 ◽  
Author(s):  
Toshiko SUZUKI ◽  
Kichinosuke HIROKAWA ◽  
Yasuo FUKUDA ◽  
Kenichi SUZUKI ◽  
Satoshi HASHIMOTO ◽  
...  

1977 ◽  
Vol 23 (4) ◽  
pp. 719-724 ◽  
Author(s):  
Donald D Thornton

Abstract The sharpness and reproducibility of the gallium melting point were studied, and the melting temperature of gallium in terms of IPTS-68 was determined. Small melting-point cells designed for use with thermistors are described. Nine gallium cells including three levels of purity were used in 68 separate determinations of the melting point. The melting point of 99.99999% pure gallium in terms of IPTS-68 is found to be 29.7714 ± 0.0014 °C; the melting range is less than 0.0005 °C and is reproducible to ±0.0004 °C.


Author(s):  
Anna Rygula ◽  
Anna Klisińska‐Kopacz ◽  
Paulina Krupska ◽  
Elżbieta Kuraś ◽  
Julio M. Hoyo‐Meléndez

Sign in / Sign up

Export Citation Format

Share Document