Translation Solder Self-Alignment Mechanics Modeling for a Flip Chip in the Presence of a Viscous Fluid

2010 ◽  
Vol 132 (4) ◽  
Author(s):  
Brett Fennell ◽  
Sangil Lee ◽  
Daniel F. Baldwin

Conventional flip chip on board processing involves four major steps: flux application, solder reflow, underfill flow, and underfill cure. The latter two steps are particularly time consuming. To address this issue, a new flip chip process has been developed in which underfill is dispensed prior to chip placement or directly on the wafer and solder reflow and underfill cure occur simultaneously. This reduces the cycle time required for manufacturing. However, the presence of the underfill can affect the flip chips’ capacity for self-alignment. Self-alignment occurs in controlled collapse bonding when the solder interconnects become liquidus and, driven by surface tension, pull the chip into registration with the substrate. To study flip chip self-alignment in the presence of underfill, the viscous forces acting on the chip during realignment are modeled after Couette flow and the overall system is modeled as a spring-mass-damper. This paper details the modeling process and includes parametric studies to predict those conditions that are more conducive to alignment, as well as those which are not.

Author(s):  
Hua Lu ◽  
Chris Bailey

Traditionally, before flip chips can be assembled the dies have to be attached with solder bumps. This process involves the deposition of metal layers on the Al pads on the dies and this is called the under bump metallurgy (UBM). In an alternative process, however, Copper (Cu) columns can be used to replace solder bumps and the UBM process may be omitted altogether. After the bumping process, the bumped dies can be assembled on to the printed circuit board (PCB) by using either solder or conductive adhesives. In this work, the reliability issues of flip chips with Cu column bumped dies have been studied. The flip chip lifetime associated with the solder fatigue failure has been modeled for a range of geometric parameters. The relative importance of these parameters is given and solder volume has been identified as the most important design parameter for long-term reliability. Another important problem that has been studied in this work is the dissolution of protection metals on the pad and Cu column in the reflow process. For small solder joints the amount of Cu which dissolves into the molten solder after the protection layers have worn out may significantly affect solder joint properties.


2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Fei Chong Ng ◽  
Aizat Abas ◽  
Muhammad Naqib Nashrudin ◽  
M. Yusuf Tura Ali

Purpose This paper aims to study the filling progression of underfill flow and void formation during the flip-chip encapsulation process. Design/methodology/approach A new parameter of filling progression that relates volume fraction filled to filling displacement was formulated analytically. Another indicative parameter of filling efficiency was also introduced to quantify the voiding fraction in filling progression. Additionally, the underfill process on different flip-chips based on the past experiments was numerically simulated. Findings All findings were well-validated with reference to the past experimental results, in terms of quantitative filling progression and qualitative flow profiles. The volume fraction filled increases monotonically with the filling displacement and thus the filling time. As the underfill fluid advances, the size of the void decreases while the filling efficiency increases. Furthermore, the void formed during the underfilling flow stage was caused by the accelerated contact line jump at the bump entrance. Practical implications The filling progression enabled manufacturers to forecast the underfill flow front, as it advances through the flip-chip. Moreover, filling progression and filling efficiency could provide quantitative insights for the determination of void formations at any filling stages. The voiding formation mechanism enables the prompt formulation of countermeasures. Originality/value Both the filling progression and filling efficiency are new indicative parameters in quantifying the performance of the filling process while considering the reliability defects such as incomplete filling and voiding.


Author(s):  
George F. Gaut

Abstract Access to the solder bump and under-fill material of flip-chip devices has presented a new problem for failure analysts. The under-fill and solder bumps have also added a new source for failure causes. A new tool has become available that can reduce the time required to analyze this area of a flip-chip package. By using precision selective area milling it is possible to remove material (die or PCB) that will allow other tools to expose the source of the failure.


Author(s):  
Jin Yang ◽  
Charles Ume

Microelectronics packaging technology has evolved from through-hole and bulk configuration to surface-mount and small-profile ones. In surface mount packaging, such as flip chips, chip scale packages (CSP), and ball grid arrays (BGA), chips/packages are attached to the substrates or printed wiring boards (PWB) using solder bump interconnections. Solder bumps, which are hidden between the device and the substrate/board, are no longer visible for inspection. A novel solder bump inspection system has been developed using laser ultrasound and interferometric techniques. This system has been successfully applied to detect solder bump defects including missing, misaligned, open, and cracked solder bumps in flip chips, and chip scale packages. This system uses a pulsed Nd:YAG laser to induce ultrasound in the thermoelastic regime and the transient out-of-plane displacement response on the device surface is measured using the interferometric technique. In this paper, local temporal coherence (LTC) analysis of laser ultrasound signals is presented and compared to previous signal processing methods, including Error Ratio and Correlation Coefficient. The results show that local temporal coherence analysis increases measurement sensitivity for inspecting solder bumps in packaged electronic devices. Laser ultrasound inspection results are also compared with X-ray and C-mode Scanning Acoustic Microscopy (CSAM) results. In particular, this paper discusses defect detection for a 6.35mm×6.35mm×0.6mm PB18 flip chip and a flip chip (SiMAF) with 24 lead-free solder bumps. These two flip chip specimens are both non-underfilled.


CFD letters ◽  
2020 ◽  
Vol 12 (8) ◽  
pp. 55-63
Author(s):  
Ng Fei Chong ◽  
Mohd Hafiz Zawawi ◽  
Tung Lun Hao ◽  
Mohamad Aizat Abas ◽  
Mohd Zulkifly Abdullah

2004 ◽  
Vol 127 (2) ◽  
pp. 120-126 ◽  
Author(s):  
Daijiao Wang ◽  
Ronald L. Panton

Understanding the formation of voids in solder joints is important for predicting the long-term reliability of solder interconnects. This paper reports experimental research on the formation of void bubbles within molten solder bumps in flip-chip connections. For flip-chip-soldered electronic components, which have small solder volume, voids can be more detrimental to reliability. A previous theory based on thermocapillary flow reveals that the direction of heating influences void formation. Using different heating profiles, 480 solder joints of flip-chip assemblies were processed. A high-lead 90Pb∕8Sn∕2Ag solder was employed in the experiments. The solder samples were microsectioned to determine the actual size or diameter of the voids. A database on sizes and locations of voids was then constructed. More defective bumps, 80%, and higher void volume were found when the solder was melted from top (flip-chip side) to bottom (test board side). The observation on cases with melting direction from bottom to top had 40% defective bumps. The results show that a single big void is near the solder bump center with a few small voids near the edge. This supports the numerical study based on the thermocapillary theory. When the melting direction was reversed, many small voids appear near the edge. Big and middle-size voids tend to stay in the middle and outer regions from top towards middle layer of the bump. This experimental finding does not completely agree with the interpretation on the formation of voids by thermocapillary theory, however, the results do show that heat flux direction plays significant role in the formation and distribution of void bubbles in molten solder.


2012 ◽  
Vol 2012 (1) ◽  
pp. 000376-000383
Author(s):  
Hanzhuang Liang ◽  
Nordson Asymtek

Microelectronic packaging is continuously becoming smaller and denser, thus allowing for more functionalities and smaller devices including portable products. Flip-chip among other technologies continues to enable such trends. In fact denser arrays such as copper pillars or micro bumps of various metallurgies seem to be the technology of choice for the near future electronic interconnect. A technique is reviewed for successfully underfilling a 3cm2 Indium Phosphide flip-chip die mounted on a silicon substrate with 5 microns gap and large number of I/O (about 0.3 million indium bumps) connected in daisy chains. The method that resulted in a void-free underfill consisted of line dispensing along one side of the die such that the flow of the capillary fluid was normal to the direction of the daisy chains. For dot-dispense, substrate surface treatment and more careful design of dispense sequence helped to reduce voids. This study was compared to a manual dot-dispense technique that was unable to meet production throughput requirement, accuracy, repeatability and void-free. Achievement of void-free automated underfill into a 5-micron gap with complex features underneath a large flip chips will encourage today's microelectronic packaging industry to meet the challenges of smaller and denser components.


2015 ◽  
Vol 2015 (1) ◽  
pp. 000787-000792
Author(s):  
E. Misra ◽  
T. Wassick ◽  
I. Melville ◽  
K. Tunga ◽  
D. Questad ◽  
...  

The introduction of low-k & ultra-low-k dielectrics, lead-free (Pb-free) solder interconnects or C4's, and organic flip-chip laminates for integrated circuits have led to some major reliability challenges for the semiconductor industry. These include C4 electromigration (EM) and mechanical failures induced with-in the Si chip due to chip-package interactions (CPI). In 32nm technology, certain novel design changes were evaluated in the last Cu wiring level and the Far Back End of Line levels (FBEOL) to strategically re-distribute the current more uniformly through the Pb-free C4 bumps and therefore improve the C4 EM capabilities of the technology. FBEOL process integration changes, such as increasing the thickness of the hard dielectric (SiNx & SiOx) and reducing the final via diameter, were also evaluated for reducing the mechanical stresses in the weaker BEOL levels and mitigating potential risks for mechanical failures within the Si chip. The supporting white-bump, C4 EM and electrical/mechanical modeling data that demonstrates the benefits of the design and integration changes will be discussed in detail in the paper. Some of the key processing and integration challenges observed due to the design and process updates and the corresponding mitigation steps taken will also be discussed.


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