Numerical and Experimental Study on Metal Organic Vapor-Phase Epitaxy of InGaN∕GaN Multi-Quantum-Wells

2008 ◽  
Vol 130 (8) ◽  
Author(s):  
Changsung Sean Kim ◽  
Jongpa Hong ◽  
Jihye Shim ◽  
Bum Joon Kim ◽  
Hak-Hwan Kim ◽  
...  
Keyword(s):  
Experimental Study ◽  
Quantum Wells ◽  
Vapor Phase ◽  
Gas Flow ◽  
Vapor Phase Epitaxy ◽  
Operating Conditions ◽  
Cfd Simulations ◽  
Organic Vapor ◽  
Wide Range ◽  
Metal Organic

A numerical and experimental study has been performed to characterize the metal organic vapor-phase epitaxy (MOVPE) growth of InGaN∕GaN multi-quantum-wells. One of the major objectives of the present study is to predict the optimal operating conditions that would be suitable for the fabrication of GaN-based light-emitting diodes using three different reactors, vertical, horizontal, and planetary. Computational fluid dynamics (CFD) simulations considering gas-phase chemical reactions and surface chemistry were carried out and compared with experimental measurements. Through a lot of CFD simulations, the database for the multiparametric dependency of indium incorporation and growth rate in InGaN∕GaN layers has been established in a wide range of growth conditions. Also, a heating system using radio frequency power was verified to obtain the uniform temperature distribution by simulating the electromagnetic field as well as gas flow fields. The present multidisciplinary approach has been applied to the development of a novel-concept MOVPE system as well as performance enhancement of existing commercial reactors.

Numerical and Experimental Study on Metal Organic Vapor Phase Epitaxy of InGaN/GaN Multi Quantum Wells

2007 ◽  
Author(s):  
Changsung Sean Kim ◽  
Jongpa Hong ◽  
Jihye Shim ◽  
Bum Joon Kim ◽  
Hak-Hwan Kim ◽  
...  
Keyword(s):  
Experimental Study ◽  
Quantum Wells ◽  
Vapor Phase ◽  
Performance Enhancement ◽  
Vapor Phase Epitaxy ◽  
Operating Conditions ◽  
Cfd Simulations ◽  
Organic Vapor ◽  
Wide Range ◽  
Metal Organic

A numerical and experimental study has been performed to characterize the metal organic vapor phase epitaxy (MOVPE) growth of InGaN/GaN multi-quantum wells (MQW). One of the major objectives of the present study is to predict the optimal operating conditions that would be suitable for the fabrication of GaN-based light-emitting diodes (LED) using three different reactors, vertical, horizontal and planetary. Computational fluids dynamic (CFD) simulations considering gas phase chemical reactions and surface chemistry were carried out and compared with experimental measurements. Through a lot of CFD simulations, the database for the multiparametric dependency of indium incorporation and growth rate in InGaN/GaN layers has been established in a wide range of growth conditions. Also, a heating system using radio frequency (RF) power was verified to obtain the uniform temperature distribution by simulating the electro-magnetic field as well as thermodynamic flow fields. The present multidisciplinary approach has been applied to the development of a novel-concept MOVPE system as well as performance enhancement of existing commercial reactors.

Deep Electronic Levels of AlxGa1-xN with a Wide Range of Al Composition Grown by Metal–Organic Vapor Phase Epitaxy

2010 ◽  
Vol 49 (10) ◽  
pp. 101001 ◽  
Author(s):  
Kimihito Ooyama ◽  
Katsuya Sugawara ◽  
Shinya Okuzaki ◽  
Hiroyuki Taketomi ◽  
Hideto Miyake ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Wide Range ◽  
Metal Organic

Green Electroluminescence from Radial m-Plane InGaN Quantum Wells Grown on GaN Wire Sidewalls by Metal–Organic Vapor Phase Epitaxy

ACS Photonics ◽  
2018 ◽  
Vol 5 (11) ◽  
pp. 4330-4337 ◽  
Author(s):  
Akanksha Kapoor ◽  
Nan Guan ◽  
Martin Vallo ◽  
Agnes Messanvi ◽  
Lorenzo Mancini ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic ◽  
Ingan Quantum Wells

Single-wire photodetectors based on InGaN/GaN radial quantum wells in GaN wires grown by catalyst-free metal-organic vapor phase epitaxy

2011 ◽  
Vol 98 (23) ◽  
pp. 233107 ◽  
Author(s):  
A. De Luna Bugallo ◽  
L. Rigutti ◽  
G. Jacopin ◽  
F. H. Julien ◽  
C. Durand ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Single Wire ◽  
Organic Vapor ◽  
Catalyst Free ◽  
Metal Organic ◽  
Free Metal

Band offsets and exciton binding energies inZn1−xCdxSe-ZnSe quantum wells grown by metal-organic vapor-phase epitaxy

1995 ◽  
Vol 51 (7) ◽  
pp. 4699-4702 ◽  
Author(s):  
F. Liaci ◽  
P. Bigenwald ◽  
O. Briot ◽  
B. Gil ◽  
N. Briot ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Binding Energies ◽  
Band Offsets ◽  
Organic Vapor ◽  
Metal Organic
Sign in / Sign up

Export Citation Format

Share Document