Erratum: “Size-dependent photoluminescence of hexagonal nanopillars with single InGaAs/GaAs quantum wells fabricated by selective-area metal organic vapor phase epitaxy” [Appl. Phys. Lett. 89, 203110 (2006)]

2008 ◽  
Vol 92 (5) ◽  
pp. 059901
Author(s):  
L. Yang ◽  
J. Motohisa ◽  
J. Takeda ◽  
K. Tomioka ◽  
T. Fukui
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Size Dependent ◽  
Organic Vapor ◽  
Selective Area ◽  
Metal Organic

Kinetic Analysis of InN Selective Area Metal–Organic Vapor Phase Epitaxy

2008 ◽  
Vol 1 ◽  
pp. 071102 ◽  
Author(s):  
Tomonari Shioda ◽  
Masakazu Sugiyama ◽  
Yukihiro Shimogaki ◽  
Yoshiaki Nakano
Keyword(s):  
Kinetic Analysis ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Selective Area ◽  
Metal Organic

Green Electroluminescence from Radial m-Plane InGaN Quantum Wells Grown on GaN Wire Sidewalls by Metal–Organic Vapor Phase Epitaxy

ACS Photonics ◽  
2018 ◽  
Vol 5 (11) ◽  
pp. 4330-4337 ◽  
Author(s):  
Akanksha Kapoor ◽  
Nan Guan ◽  
Martin Vallo ◽  
Agnes Messanvi ◽  
Lorenzo Mancini ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic ◽  
Ingan Quantum Wells

Selective Area Growth by Metal Organic Vapor Phase Epitaxy and Atomic Layer Epitaxy Using Ga2O3as a Novel Mask Layer

1999 ◽  
Vol 38 (Part 1, No. 3A) ◽  
pp. 1516-1520 ◽  
Author(s):  
Shingo Hirose ◽  
Akihiro Yoshida ◽  
Masaaki Yamaura ◽  
Kazuhiko Hara ◽  
Hiro Munekata
Keyword(s):  
Vapor Phase ◽  
Atomic Layer ◽  
Vapor Phase Epitaxy ◽  
Atomic Layer Epitaxy ◽  
Selective Area Growth ◽  
Organic Vapor ◽  
Mask Layer ◽  
Selective Area ◽  
Area Growth ◽  
Metal Organic
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