Band offsets and exciton binding energies inZn1−xCdxSe-ZnSe quantum wells grown by metal-organic vapor-phase epitaxy

F. Liaci; P. Bigenwald; O. Briot; B. Gil; N. Briot; T. Cloitre; R. L. Aulombard

doi:10.1103/physrevb.51.4699

Band offsets and exciton binding energies inZn1−xCdxSe-ZnSe quantum wells grown by metal-organic vapor-phase epitaxy

Physical Review B ◽

10.1103/physrevb.51.4699 ◽

1995 ◽

Vol 51 (7) ◽

pp. 4699-4702 ◽

Cited By ~ 36

Author(s):

F. Liaci ◽

P. Bigenwald ◽

O. Briot ◽

B. Gil ◽

N. Briot ◽

...

Keyword(s):

Quantum Wells ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Binding Energies ◽

Band Offsets ◽

Organic Vapor ◽

Metal Organic

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Green Electroluminescence from Radial m-Plane InGaN Quantum Wells Grown on GaN Wire Sidewalls by Metal–Organic Vapor Phase Epitaxy

ACS Photonics ◽

10.1021/acsphotonics.8b00520 ◽

2018 ◽

Vol 5 (11) ◽

pp. 4330-4337 ◽

Cited By ~ 11

Author(s):

Akanksha Kapoor ◽

Nan Guan ◽

Martin Vallo ◽

Agnes Messanvi ◽

Lorenzo Mancini ◽

...

Keyword(s):

Quantum Wells ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Organic Vapor ◽

Metal Organic ◽

Ingan Quantum Wells

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Low-temperature growth of GaInNAs/GaAs quantum wells for 1.3 μm lasers using metal-organic vapor-phase epitaxy

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) ◽

10.1109/iciprm.2001.929211 ◽

2002 ◽

Author(s):

G. Plaine ◽

C. Asplund ◽

P. Sundgren ◽

S. Mogg ◽

M. Hammar

Keyword(s):

Low Temperature ◽

Quantum Wells ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Temperature Growth ◽

Low Temperature Growth ◽

Organic Vapor ◽

Metal Organic

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In situ curvature monitoring for metal–organic vapor phase epitaxy of strain-balanced stacks of InGaAs/GaAsP multiple quantum wells

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2010.09.070 ◽

2011 ◽

Vol 315 (1) ◽

pp. 1-4 ◽

Cited By ~ 27

Author(s):

Masakazu Sugiyama ◽

Kenichi Sugita ◽

Yunpeng Wang ◽

Yoshiaki Nakano

Keyword(s):

Quantum Wells ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Organic Vapor ◽

Metal Organic

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Single-wire photodetectors based on InGaN/GaN radial quantum wells in GaN wires grown by catalyst-free metal-organic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.3596446 ◽

2011 ◽

Vol 98 (23) ◽

pp. 233107 ◽

Cited By ~ 51

Author(s):

A. De Luna Bugallo ◽

L. Rigutti ◽

G. Jacopin ◽

F. H. Julien ◽

C. Durand ◽

...

Keyword(s):

Quantum Wells ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Single Wire ◽

Organic Vapor ◽

Catalyst Free ◽

Metal Organic ◽

Free Metal

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Erratum: “Size-dependent photoluminescence of hexagonal nanopillars with single InGaAs/GaAs quantum wells fabricated by selective-area metal organic vapor phase epitaxy” [Appl. Phys. Lett. 89, 203110 (2006)]

Applied Physics Letters ◽

10.1063/1.2841828 ◽

2008 ◽

Vol 92 (5) ◽

pp. 059901

Author(s):

L. Yang ◽

J. Motohisa ◽

J. Takeda ◽

K. Tomioka ◽

T. Fukui

Keyword(s):

Quantum Wells ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Size Dependent ◽

Organic Vapor ◽

Selective Area ◽

Metal Organic

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Strain effects on the intersubband transitions in GaN/AlN multiple quantum wells grown by low-temperature metal organic vapor phase epitaxy with AlGaN interlayer

Applied Physics Letters ◽

10.1063/1.3253715 ◽

2009 ◽

Vol 95 (16) ◽

pp. 161908 ◽

Cited By ~ 11

Author(s):

Hassanet Sodabanlu ◽

Jung-Seung Yang ◽

Masakazu Sugiyama ◽

Yukihiro Shimogaki ◽

Yoshiaki Nakano

Keyword(s):

Low Temperature ◽

Quantum Wells ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Intersubband Transitions ◽

Strain Effects ◽

Organic Vapor ◽

Metal Organic

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Growth rate and composition of InGaN during InGaN/GaN quantum wells selective area metal-organic vapor phase epitaxy considering surface diffusion

Journal of Industrial and Engineering Chemistry ◽

10.1016/j.jiec.2013.02.017 ◽

2013 ◽

Vol 19 (5) ◽

pp. 1747-1751 ◽

Cited By ~ 4

Author(s):

Byung Moon So ◽

Suk Bum Youn ◽

Ik-Tae Im

Keyword(s):

Growth Rate ◽

Quantum Wells ◽

Surface Diffusion ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Organic Vapor ◽

Selective Area ◽

Metal Organic

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Strain-compensation measurement and simulation of InGaAs/GaAsP multiple quantum wells by metal organic vapor phase epitaxy using wafer-curvature

Journal of Applied Physics ◽

10.1063/1.3663309 ◽

2011 ◽

Vol 110 (11) ◽

pp. 113501 ◽

Cited By ~ 19

Author(s):

ShaoJun Ma ◽

Hassanet Sodabanlu ◽

Kentaroh Watanabe ◽

Masakazu Sugiyama ◽

Yoshiaki Nakano

Keyword(s):

Quantum Wells ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Wafer Curvature ◽

Organic Vapor ◽

Strain Compensation ◽

Metal Organic ◽

Compensation Measurement

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P-Down InGaN/GaN Multiple Quantum Wells Light-Emitting Diode Structure Grown by Metal-Organic Vapor-Phase Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.2489 ◽

2002 ◽

Vol 41 (Part 1, No. 4B) ◽

pp. 2489-2492 ◽

Cited By ~ 18

Author(s):

Chih-Hsin Ko ◽

Yan-Kuin Su ◽

Shoou-Jinn Chang ◽

Ta-Ming Kuan ◽

Chung-I Chiang ◽

...

Keyword(s):

Quantum Wells ◽

Vapor Phase ◽

Light Emitting Diode ◽

Vapor Phase Epitaxy ◽

Diode Structure ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Light Emitting ◽

Organic Vapor ◽

Metal Organic

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In situX-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy

Journal of Applied Physics ◽

10.1063/1.4867640 ◽

2014 ◽

Vol 115 (9) ◽

pp. 094906 ◽

Cited By ~ 9

Author(s):

Guangxu Ju ◽

Yoshio Honda ◽

Masao Tabuchi ◽

Yoshikazu Takeda ◽

Hiroshi Amano

Keyword(s):

Quantum Wells ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Single Quantum ◽

Organic Vapor ◽

Metal Organic

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