Transient Optical Transmission Measurement in Excimer-Laser Irradiation of Amorphous Silicon Films

1993 ◽  
Vol 115 (1) ◽  
pp. 178-183 ◽  
Author(s):  
H. K. Park ◽  
X. Xu ◽  
C. P. Grigoropoulos ◽  
N. Do ◽  
L. Klees ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Amorphous Silicon ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Optical Transmission ◽  
Elevated Temperatures ◽  
Transient Temperature ◽  
Transmission Measurement ◽  
Excimer Laser Irradiation

The transient temperature field development during heating of an amorphous silicon (a-Si) film, deposited on a fused quartz substrate, by pulsed excimer laser irradiation is studied. Static reflectivity and transmissivity measurements are used to obtain the thin film optical properties at elevated temperatures. Experimental in-situ, transient, optical transmission data are compared with heat transfer modeling results. The variation with temperature of the material complex refractive index across the thin film thickness is taken into account. The effects of the film thickness and thermal diffusivity, as well as of the laser pulse shape, are discussed.

Determination of Thermal Conductivity of Amorphous Silicon Thin Films via Non-Contacting Optical Probing

2006 ◽  
Vol 326-328 ◽  
pp. 689-692
Author(s):  
Seung Jae Moon
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Conductivity ◽  
Amorphous Silicon ◽  
Optical Transmission ◽  
Film Deposition ◽  
Transmission Measurement ◽  
Conductive Heat ◽  
Optical Transmission Measurement

The thermal conductivity of amorphous silicon (a-Si) thin films is determined by using the non-intrusive, in-situ optical transmission measurement. The thermal conductivity of a-Si is a key parameter in understanding the mechanism of the recrystallization of polysilicon (p-Si) during the laser annealing process to fabricate the thin film transistors with uniform characteristics which are used as switches in the active matrix liquid crystal displays. Since it is well known that the physical properties are dependent on the process parameters of the thin film deposition process, the thermal conductivity should be measured. The temperature dependence of the film complex refractive index is determined by spectroscopic ellipsometry. A nanosecond KrF excimer laser at the wavelength of 248 nm is used to raise the temperature of the thin films without melting of the thin film. In-situ transmission signal is obtained during the heating process. The acquired transmission signal is fitted with predictions obtained by coupling conductive heat transfer with multi-layer thin film optics in the optical transmission measurement.

scholarly journals Fabrication of Thin-Film YBCO Josephson Junctions by Excimer Laser Irradiation.

1991 ◽  
Vol 19 (7) ◽  
pp. 627-633 ◽  
Author(s):  
Jian CHEN ◽  
Takashi NOZUE ◽  
Yoshiyuki KIYOSAWA ◽  
Hajime SUZUKI ◽  
Tsutomu YAMASHITA ◽  
...  
Keyword(s):  
Thin Film ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Josephson Junctions ◽  
Excimer Laser Irradiation

High-Performance Poly-Si Thin Film Transistors Crystallized by Excimer Laser Irradiation with A-Si Spacer Structure

2005 ◽  
Vol 8 (1) ◽  
pp. G14 ◽  
Author(s):  
Ting-Kuo Chang ◽  
Ching-Wei Lin ◽  
Chun-Chien Tsai ◽  
Jian-Hao Lu ◽  
Bo-Ting Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
High Performance ◽  
Excimer Laser Irradiation ◽  
Si Thin Film

Fabrication method for self-aligned bottom-gate oxide thin-film transistors by utilizing backside excimer-laser irradiation through substrate

2013 ◽  
Vol 103 (14) ◽  
pp. 142111 ◽  
Author(s):  
Mitsuru Nakata ◽  
Hiroshi Tsuji ◽  
Yoshihide Fujisaki ◽  
Hiroto Sato ◽  
Yoshiki Nakajima ◽  
...  
Keyword(s):  
Thin Film ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Gate Oxide ◽  
Oxide Thin Film ◽  
Fabrication Method ◽  
Excimer Laser Irradiation ◽  
Bottom Gate
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