Effect of Stress State of Different Tin Films on Their Tribological Behavior

1998 ◽  
Vol 120 (4) ◽  
pp. 820-828 ◽  
Author(s):  
Zhuang Daming ◽  
Liu Jiajun ◽  
Zhu Baoliang ◽  
Zhou Zhong-Rong ◽  
Leo Vincent ◽  
...  
Keyword(s):  
Stress State ◽  
Tribological Behavior ◽  
Steel Substrate ◽  
Ion Beam ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Plasma Chemical ◽  
Tin Films ◽  
Plasma Chemical Vapor Deposition ◽  
Tin Film

Titanium nitride films were deposited by the methods of ion beam enhanced deposition (IBED), plasma chemical vapor deposition (PCVD) and ion plating (IP). X-ray diffraction analysis was employed to determine the internal stress state of TiN film and 52100 steel substrate at both sides of the interface. The effect of stress state on their bonding strength and tribological behavior was analyzed systematically, their wear and failure mechanisms were discussed in detail as well.

scholarly journals The changing of silicon suboxide film thickness as a result of high temperature annealing

2019 ◽  
Vol 196 ◽  
pp. 00053
Author(s):  
Alexandr Zamchiy ◽  
Evgeniy Baranov
Keyword(s):  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
X Ray Diffraction ◽  
Plasma Chemical ◽  
Flow Rates ◽  
X Ray ◽  
Plasma Chemical Vapor Deposition ◽  
Silicon Suboxide ◽  
Deposited Films ◽  
Electron Beam Plasma

The a-SiOx:H thin films were deposited by the gas-jet electron beam plasma chemical vapor deposition method with different stoichiometry (x=0.15-1.0) for different SiH4 flow rates. The concentration of hydrogen in the films increases with the growth rate in ranges from 1.5 to 4.8 at.%. Further annealing leads to the effusion of hydrogen from the structure of the material and the compression of the structure, which leads to a reduction in the thickness for all films. X-ray diffraction measurements showed that the as-deposited films crystallized to form nc-Si about 4-8 nm in size after annealing at 1000°C.

GROWTH, CHARACTERIZATION, AND PROPERTIES OF CARBON NITRIDE WITH AND WITHOUT SILICON ADDITION

2000 ◽  
Vol 14 (02n03) ◽  
pp. 333-348 ◽  
Author(s):  
L. C. CHEN ◽  
C. T. WU ◽  
J.-J. WU ◽  
K. H. CHEN
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Carbon Nitride ◽  
Electron Cyclotron Resonance ◽  
Microwave Plasma ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Wide Range

Carbon nitride and silicon carbon nitride have been grown by microwave plasma chemical vapor deposition, electron-cyclotron-resonance plasma chemical vapor deposition, magnetron sputtering and ion beam sputtering. Depending on the specific process details, a wide range of microstructure and morphologies has been demonstrated. Effects of Si addition to CN network on the structure of the deposited materials were studied. While Si involvement in CVD process was crucial for crystal growth, excessive Si incorporation led to formation of amorphous phase in PVD process. Various optical constants including the band gap and refractive index of the SiCN phases are also reported.

Morphology of heavily B-doped diamond films

1993 ◽  
Vol 8 (11) ◽  
pp. 2845-2857 ◽  
Author(s):  
Koichi Miyata ◽  
Kazuo Kumagai ◽  
Kozo Nishimura ◽  
Koji Kobashi
Keyword(s):  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Plasma Chemical ◽  
X Ray ◽  
Plasma Chemical Vapor Deposition ◽  
Si Substrates ◽  
Surface Morphologies

B-doped diamond films were synthesized by microwave plasma chemical vapor deposition using a mixture of methane (0.5% or 1.2%) and diborane (B2H6) below 50 ppm on either Si substrates or undoped diamond films that had been synthesized using 0.5% or 1.2% methane. The surface morphologies of the synthesized films were observed by Secondary Electron Microscopy, and the infrared absorption and Raman spectra were measured. It was found that when diborane concentration was low, B-doped films preferred (111) facets. On the other hand, high diborane concentrations resulted in a deposition of needle-like material that was identified as graphite by x-ray diffraction.

Growth of highly (111)-oriented, highly coalesced diamond films on platinum (111) surface: A possibility of heteroepitaxy

1996 ◽  
Vol 11 (12) ◽  
pp. 2955-2956 ◽  
Author(s):  
Yoshihiro Shintani
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Plasma Chemical ◽  
X Ray ◽  
Plasma Chemical Vapor Deposition ◽  
Scanning Electron

A highly (111)-oriented, highly coalesced diamond film was grown on platinum (111) surface by microwave plasma chemical vapor deposition (MPCVD). Scanning electron microscopy and x-ray diffraction analyses revealed that the (111) diamond facets were azimuthally oriented epitaxially with respect to the orientation of the Pt(111) domain underneath, with the neighboring facets of diamond being coalesced with each other. The film was confirmed as diamond using Raman spectroscopy.

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