Thermal Conduction in Nonhomogeneous CVD Diamond Layers in Electronic Microstructures

1996 ◽  
Vol 118 (2) ◽  
pp. 279-286 ◽  
Author(s):  
K. E. Goodson
Keyword(s):  
Thermal Conduction ◽  
Room Temperature ◽  
Phonon Scattering ◽  
Chemical Vapor ◽  
Phonon Transport ◽  
Local Characteristic ◽  
Scattering Rate ◽  
Chemical Vapor Deposited ◽  
Conduction Cooling ◽  
Scattering Strength

Chemical-vapor-deposited diamond layers of thickness between 0.1 and 5 μm have the potential to improve conduction cooling in electronic microstructures. However, thermal conduction in these layers is strongly impeded by phonon scattering on defects, whose concentrations can be highly nonhomogeneous, and on layer boundaries. By assuming that defects are concentrated near grain boundaries, this work relates the internal phonon scattering rate to the local characteristic grain dimension and to the dimensionless grain-boundary scattering strength, a parameter defined here that varies little within a given layer. Solutions to the Peierls–Boltzmann phonon transport equation for conduction along and normal to layers account for the nonhomogeneous internal scattering rate. Predictions for conduction along and normal to layers as thin as 0.2 μm agree well with room-temperature data. This research helps optimize diamond layer thicknesses for specific microstructures, such as silicon-on-diamond (SOD) circuits.

scholarly journals Chemical-Vapor-Deposited Graphene as Charge Storage Layer in Flash Memory Device

2016 ◽  
Vol 2016 ◽  
pp. 1-6 ◽  
Author(s):  
W. J. Liu ◽  
L. Chen ◽  
P. Zhou ◽  
Q. Q. Sun ◽  
H. L. Lu ◽  
...  
Keyword(s):  
Flash Memory ◽  
Room Temperature ◽  
Metal Layer ◽  
Chemical Vapor ◽  
Charge Trapping ◽  
Memory Device ◽  
Water Molecules ◽  
Oh Groups ◽  
Chemical Vapor Deposited ◽  
A Charge

We demonstrated a flash memory device with chemical-vapor-deposited graphene as a charge trapping layer. It was found that the average RMS roughness of block oxide on graphene storage layer can be significantly reduced from 5.9 nm to 0.5 nm by inserting a seed metal layer, which was verified by AFM measurements. The memory window is 5.6 V for a dual sweep of ±12 V at room temperature. Moreover, a reduced hysteresis at the low temperature was observed, indicative of water molecules or −OH groups between graphene and dielectric playing an important role in memory windows.

Diamond Nanopit Arrays Fabricated by Room-Temperature Nanoimprinting using Diamond Molds

2011 ◽  
Vol 1282 ◽  
Author(s):  
Shuji Kiyohara ◽  
Masaya Kumagai ◽  
Yoshio Taguchi ◽  
Yoshinari Sugiyama ◽  
Yukiko Omata ◽  
...  
Keyword(s):  
Nanoimprint Lithography ◽  
Room Temperature ◽  
Electron Cyclotron Resonance ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Ion Beam Etching ◽  
Minimum Diameter ◽  
Oxygen Ion ◽  
Pressure Time ◽  
Chemical Vapor Deposited

ABSTRACTWe have investigated the nanopatterning of chemical vapor deposited (CVD) diamond films in room-temperature nanoimprint lithography (RT-NIL), using a diamond nanodot mold. We have proposed the use of polysiloxane as an electron beam (EB) mask and RT-imprint resist materials. The diamond molds of cylinder dot using the RT-NIL process were fabricated with polysiloxane oxide mask in EB lithography technology. The dot in minimum diameter is 500 nm. The pitch between the dots is 2 μm, and dot has a height of about 600 nm. It was found that the optimum imprinting conditions for the RT-NIL : time from spin-coating to imprinting t1 of 1 min , pressure time t2 of 5 min, imprinting pressure P of 0.5 MPa. The imprint depth obtained after the press under their conditions was 500 nm. We carried out the RT-NIL process for the fabrication of diamond nanopit arrays, using the diamond nanodot molds that we developed. The resulting diamond nanopit arrays with 500 nm-diameter and 200 nm-depth after the electron cyclotron resonance (ECR) oxygen ion beam etching were fabricated. The diameter of diamond nanopit arrays was in good agreement with that of the diamond nanodot mold.

Room-Temperature Reaction Between Laser Chemical Vapor Deposited Selenium and Some Metals.

ChemInform ◽  
2004 ◽  
Vol 35 (44) ◽  
Author(s):  
Akihiko Ouchi ◽  
Zdenek Bastl ◽  
Jaroslav Bohacek ◽  
Hideo Orita ◽  
Koji Miyazaki ◽  
...  
Keyword(s):  
Room Temperature ◽  
Chemical Vapor ◽  
Temperature Reaction ◽  
Chemical Vapor Deposited

Room-Temperature Reaction between Laser Chemical Vapor Deposited Selenium and Some Metals

2004 ◽  
Vol 16 (18) ◽  
pp. 3439-3445 ◽  
Author(s):  
Akihiko Ouchi ◽  
Zdeněk Bastl ◽  
Jaroslav Boháček ◽  
Hideo Orita ◽  
Koji Miyazaki ◽  
...  
Keyword(s):  
Room Temperature ◽  
Chemical Vapor ◽  
Temperature Reaction ◽  
Chemical Vapor Deposited

Highly sensitive and selective room-temperature NO 2 gas sensor based on bilayer transferred chemical vapor deposited graphene

2017 ◽  
Vol 404 ◽  
pp. 357-363 ◽  
Author(s):  
Yotsarayuth Seekaew ◽  
Ditsayut Phokharatkul ◽  
Anurat Wisitsoraat ◽  
Chatchawal Wongchoosuk
Keyword(s):  
Gas Sensor ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Highly Sensitive ◽  
Chemical Vapor Deposited

Thermal Conductivity of Thermal Interface Materials

2007 ◽  
Vol 1053 ◽  
Author(s):  
Travis Z. Fullem ◽  
Eric J. Cotts
Keyword(s):  
Thermal Conductivity ◽  
Thermal Conduction ◽  
Phonon Scattering ◽  
Filler Particle ◽  
Phonon Transport ◽  
Acoustic Microscopy ◽  
Thermal Interface Material ◽  
Bonding Layer ◽  
Thermal Interface ◽  
Polymer Filler

AbstractWhile detailed theories exist for thermal conduction due to electrons and phonons in crystalline solids, phonon scattering and transmission at solid/solid interfaces is not as well understood. Steady increases in the power density of microelectronic devices have resulted in an increasing need in the electronics industry for an understanding of thermal conduction in multilayered structures. The materials of interest in this study consist of a polymer matrix in which small (on the order of microns to tens of microns) highly conductive filler particles (such as Ag or alumina) are suspended. These materials are used to form a thermal interface material bondline (a fifty to several hundred micron bonding layer) between a power device and a heat spreader. Such a bondline contains many polymer/filler interfaces. Using a micro Fourier apparatus, the thermal conductivities of such thermal interface material (TIM) bondlines of various thicknesses, ranging from fifty microns to several hundred microns, have been measured. The microstructure of these bondlines has been investigated using optical microscopy and acoustic microscopy. Measured values of thermal conductivity are compared to values for bulk samples, and considered in terms of microstructural features such as filler particle depleted regions. The influence of polymer/filler particle interfaces in the TIM bondline on phonon transport through the bondline is also considered.

Fabrication of Diamond Nanopit arrays by Room-temperature Curing Nanoimprint Lithography Using Glass-like Carbon Molds

2012 ◽  
Vol 1395 ◽  
Author(s):  
Shuji Kiyohara ◽  
Chigaya Ito ◽  
Ippei Ishikawa ◽  
Hirofumi Takikawa ◽  
Yoshio Taguchi ◽  
...  
Keyword(s):  
Diamond Film ◽  
Nanoimprint Lithography ◽  
Room Temperature ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Mold Material ◽  
Oxygen Ion ◽  
Mask Material ◽  
Chemical Vapor Deposited ◽  
Etching Selectivity

ABSTRACTWe have proposed the use of glass-like carbon (GC), as mold material because the 27-maximum etching selectivity of polysiloxane film against GC, which was approximately sixtimes larger than that of polysiloxane film against chemical vapor deposited (CVD) diamond film. We have investigated the fabrication of diamond nanopit arrays by room-temperature curing nanoimprint lithography (RTC-NIL) using GC mold, as applications to the emitter and the micro-gear. The polysiloxane has in the state of sticky liquid at room-temperature and negative-exposure characteristic. Therefore, the polysiloxane was used as RTC-imprint resist material, and also used as electron beam (EB) resist (oxide mask) material in EB lithography. We have fabricated the cylindrical GC nanodot mold with 500 nm-diameter, 600 nm-height and 2 μm-pitch. We carried out RTC-NIL using GC mold under the following optimum conditions: time from spin-coating to imprint of 1 min, imprinting pressure of 0.5 MPa and imprinting time of 5min. Then, we have processed the diamond film with an electron cyclotron resonance (ECR) oxygen ion shower. We have fabricated diamond nanopit array with 250 nm-depth and 500 nm-diameter. The diameter of diamond nanopit pattern was in good agreement with that of GC mold. Moreover, the depth of the diamond nanopit patterns fabricated by RTC-NIL using cylindrical GC mold was three times larger than that using conical diamond mold.

Pulse Shape Study of Chemical Vapor Deposited Diamond Alpha Particle Detectors

2004 ◽  
Vol 828 ◽  
Author(s):  
S. G. Wang ◽  
P. J. Sellin ◽  
A. Lohstroh ◽  
M. E. Özsan
Keyword(s):  
Pulse Shape ◽  
Sandwich Structure ◽  
Room Temperature ◽  
Radiation Detector ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Alpha Particles ◽  
Particle Detectors ◽  
Hole Charge ◽  
Chemical Vapor Deposited

ABSTRACTWe report a study of pulse shapes of a radiation detector with a sandwich structure fabricated from chemical vapor deposited (CVD) polycrystalline diamond. The pulse shapes were recorded at room temperature using 5.486 MeV alpha particles from 241Am source. Only “fast” component was observed in the electron predominated pulses, whereas both “fast” and “slow” components were obtained in the hole predominated pulses, suggesting that electron charge drift is prompt and no detrapping occurred. In contrast, hole charge drift is slower than expected and trapping-detrapping took place during hole travel process.

Sign in / Sign up

Export Citation Format

Share Document