Highly sensitive and selective room-temperature NO 2 gas sensor based on bilayer transferred chemical vapor deposited graphene

2017 ◽  
Vol 404 ◽  
pp. 357-363 ◽  
Author(s):  
Yotsarayuth Seekaew ◽  
Ditsayut Phokharatkul ◽  
Anurat Wisitsoraat ◽  
Chatchawal Wongchoosuk
Sensors ◽  
2019 ◽  
Vol 19 (18) ◽  
pp. 3815
Author(s):  
Renyun Zhang ◽  
Magnus Hummelgård ◽  
Joel Ljunggren ◽  
Håkan Olin

Metal-semiconductor junctions and interfaces have been studied for many years due to their importance in applications such as semiconductor electronics and solar cells. However, semiconductor-metal networks are less studied because there is a lack of effective methods to fabricate such structures. Here, we report a novel Au–ZnO-based metal-semiconductor (M-S)n network in which ZnO nanowires were grown horizontally on gold particles and extended to reach the neighboring particles, forming an (M-S)n network. The (M-S)n network was further used as a gas sensor for sensing ethanol and acetone gases. The results show that the (M-S)n network is sensitive to ethanol (28.1 ppm) and acetone (22.3 ppm) gases and has the capacity to recognize the two gases based on differences in the saturation time. This study provides a method for producing a new type of metal-semiconductor network structure and demonstrates its application in gas sensing.


2008 ◽  
Vol 129 (2) ◽  
pp. 888-895 ◽  
Author(s):  
Nguyen Van Hieu ◽  
Luong Thi Bich Thuy ◽  
Nguyen Duc Chien

RSC Advances ◽  
2020 ◽  
Vol 10 (34) ◽  
pp. 20349-20357 ◽  
Author(s):  
Satyendra Singh ◽  
Archana Singh ◽  
Ajendra Singh ◽  
Poonam Tandon

A new direction was explored using nanostructured zinc antimonate as a stable and highly sensitive LPG sensing material.


2016 ◽  
Vol 2016 ◽  
pp. 1-6 ◽  
Author(s):  
W. J. Liu ◽  
L. Chen ◽  
P. Zhou ◽  
Q. Q. Sun ◽  
H. L. Lu ◽  
...  

We demonstrated a flash memory device with chemical-vapor-deposited graphene as a charge trapping layer. It was found that the average RMS roughness of block oxide on graphene storage layer can be significantly reduced from 5.9 nm to 0.5 nm by inserting a seed metal layer, which was verified by AFM measurements. The memory window is 5.6 V for a dual sweep of ±12 V at room temperature. Moreover, a reduced hysteresis at the low temperature was observed, indicative of water molecules or −OH groups between graphene and dielectric playing an important role in memory windows.


2020 ◽  
Vol 311 ◽  
pp. 127897 ◽  
Author(s):  
Surbhi Jain ◽  
Ayushi Paliwal ◽  
Vinay Gupta ◽  
Monika Tomar

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