Properties of Phosphorus-Doped Silicon-Rich Amorphous Silicon Carbide Film Prepared by a Solution Process

2016 ◽  
Vol 99 (5) ◽  
pp. 1651-1656 ◽  
Author(s):  
Takashi Masuda ◽  
Akira Iwasaka ◽  
Hideyuki Takagishi ◽  
Tatsuya Shimoda
Keyword(s):  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Solution Process ◽  
Amorphous Silicon Carbide ◽  
Silicon Carbide Film ◽  
Doped Silicon ◽  
Phosphorus Doped

Photomodulation of photocurrent multiplication in a high gain amorphous silicon carbide film

1992 ◽  
Vol 60 (9) ◽  
pp. 1102-1104 ◽  
Author(s):  
Masahiro Hiramoto ◽  
Kanji Yoshimura ◽  
Masaaki Yokoyama
Keyword(s):  
Silicon Carbide ◽  
Amorphous Silicon ◽  
High Gain ◽  
Amorphous Silicon Carbide ◽  
Silicon Carbide Film

Amorphous Silicon Carbide Film Formation at Room Temperature by Monomethylsilane Gas

2013 ◽  
Vol 740-742 ◽  
pp. 235-238
Author(s):  
Hitoshi Habuka ◽  
Masaki Tsuji ◽  
Yusuke Ando
Keyword(s):  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Room Temperature ◽  
Film Formation ◽  
Argon Plasma ◽  
Chemical Vapor ◽  
Amorphous Silicon Carbide ◽  
Silicon Carbide Film ◽  
Silicon Carbon ◽  
Thin Film Formation

The silicon carbide thin film formation process, completely performed at room temperature, was developed by argon plasma and a chemical vapor deposition using monomethylsilane gas. Silicon-carbon bonds were found to exist in the obtained film, the surface of which could remain specular after exposure to hydrogen chloride gas at 800 oC. The silicon dangling bonds formed at the silicon surface by the argon plasma are considered to react with the monomethylsilane molecules at room temperature to produce the amorphous silicon carbide film.

Molecular Dynamics Analysis of Structure and Intrinsic Stress in Amorphous Silicon Carbide Film with Deposition Process Parameters

2004 ◽  
Vol 449-452 ◽  
pp. 97-100
Author(s):  
Ju Young Kim ◽  
Baik Woo Lee ◽  
Ho Seok Nam ◽  
Dong Il Kwon
Keyword(s):  
Molecular Dynamics ◽  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Process Parameters ◽  
Deposition Process ◽  
Intrinsic Stress ◽  
Amorphous Silicon Carbide ◽  
Silicon Carbide Film ◽  
Dynamics Simulations ◽  
Sic Films

Amorphous silicon carbide (a-SiC) films were deposited using molecular dynamics simulations employing the Tersoff potential. The structure and intrinsic stress of a-SiC films changed dramatically with changes in such principal deposition process parameters as substrate temperature and incident energy. Changes in structure and intrinsic stress with deposition process parameters were analyzed.

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