Spatially addressable light transducer using an organic electroluminescent diode combined with amorphous silicon carbide film as an electron photoinjecting electrode

1990 ◽  
Vol 57 (16) ◽  
pp. 1625-1627 ◽  
Author(s):  
Masahiro Hiramoto ◽  
Tomoya Miyao ◽  
Masaaki Yokoyama
Keyword(s):  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Amorphous Silicon Carbide ◽  
Silicon Carbide Film ◽  
Organic Electroluminescent

Photomodulation of photocurrent multiplication in a high gain amorphous silicon carbide film

1992 ◽  
Vol 60 (9) ◽  
pp. 1102-1104 ◽  
Author(s):  
Masahiro Hiramoto ◽  
Kanji Yoshimura ◽  
Masaaki Yokoyama
Keyword(s):  
Silicon Carbide ◽  
Amorphous Silicon ◽  
High Gain ◽  
Amorphous Silicon Carbide ◽  
Silicon Carbide Film

Amorphous Silicon Carbide Film Formation at Room Temperature by Monomethylsilane Gas

2013 ◽  
Vol 740-742 ◽  
pp. 235-238
Author(s):  
Hitoshi Habuka ◽  
Masaki Tsuji ◽  
Yusuke Ando
Keyword(s):  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Room Temperature ◽  
Film Formation ◽  
Argon Plasma ◽  
Chemical Vapor ◽  
Amorphous Silicon Carbide ◽  
Silicon Carbide Film ◽  
Silicon Carbon ◽  
Thin Film Formation

The silicon carbide thin film formation process, completely performed at room temperature, was developed by argon plasma and a chemical vapor deposition using monomethylsilane gas. Silicon-carbon bonds were found to exist in the obtained film, the surface of which could remain specular after exposure to hydrogen chloride gas at 800 oC. The silicon dangling bonds formed at the silicon surface by the argon plasma are considered to react with the monomethylsilane molecules at room temperature to produce the amorphous silicon carbide film.

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