Neutron-irradiation effect on the electrical characteristics of amorphous silicon carbide and nitrogen-doped silicon carbide films prepared by PECVD technology

2013 ◽  
Vol 210 (12) ◽  
pp. 2756-2761 ◽  
Author(s):  
Jozef Huran ◽  
Pavol Boháček ◽  
Valery N. Shvetsov ◽  
Alexander P. Kobzev ◽  
Angela Kleinová ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Neutron Irradiation ◽  
Irradiation Effect ◽  
Electrical Characteristics ◽  
Amorphous Silicon Carbide ◽  
Nitrogen Doped ◽  
Doped Silicon

Characterization of nitrogen-doped amorphous silicon carbide thin films

Vacuum ◽  
1998 ◽  
Vol 51 (2) ◽  
pp. 165-167 ◽  
Author(s):  
J Šafránkováa ◽  
J Hurana ◽  
I Hotovýb ◽  
AP Kobzevc ◽  
SA Korenevc
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Amorphous Silicon Carbide ◽  
Nitrogen Doped

Structural relaxation of amorphous silicon carbide thin films in thermal annealing

2008 ◽  
Vol 516 (12) ◽  
pp. 3855-3861 ◽  
Author(s):  
Kun Xue ◽  
Li-Sha Niu ◽  
Hui-Ji Shi ◽  
Jiwen Liu
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Structural Relaxation ◽  
Amorphous Silicon Carbide

Ion beam effects on the hydrogenated bonds of amorphous silicon carbide

2000 ◽  
Vol 166-167 ◽  
pp. 404-409 ◽  
Author(s):  
P. Musumeci ◽  
L. Calcagno ◽  
A. Makhtari ◽  
P. Baeri ◽  
G. Compagnini ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Ion Beam ◽  
Amorphous Silicon Carbide
Sign in / Sign up

Export Citation Format

Share Document