Reactive ion etching (CF4/Ar) and ion beam etching of various glasses for diffractive optical element fabrication

2018 ◽  
Vol 9 (4) ◽  
pp. 499-509 ◽  
Author(s):  
Jana Schmitt ◽  
Andreas Meier ◽  
Ulrike Wallrabe ◽  
Friedemann Völklein
Keyword(s):  
Ion Beam ◽  
Reactive Ion Etching ◽  
Optical Element ◽  
Diffractive Optical Element ◽  
Ion Etching ◽  
Ion Beam Etching

Ion-Beam Milling Materials with Applications to TEM Specimen Preparation

1996 ◽  
Vol 54 ◽  
pp. 266-267
Author(s):  
Ron Anderson
Keyword(s):  
Glow Discharge ◽  
Ion Beam ◽  
Reactive Ion Etching ◽  
Dry Etching ◽  
Surface Cleaning ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Physical Sciences ◽  
Ion Etching ◽  
Ion Beam Etching

For the last thirty years, ion milling has been an indispensable part of preparing TEM specimens in the physical sciences. While great improvements have been made in our ability to thin most materials to the point where ion milling may not be a requirement, there will still be a need to utilize ion milling to clean and polish specimens and to provide small amounts of incremental thinning as needed. Thanks mainly to the work of Bama we now understand a great deal about the physics of ion milling. We also benefit from the works of a number of investigators who have studied the artifacts produced by ion milling (see Barber for a review).Ion milling is a subset of the topic “dry etching,” which consists of two major categories: glow discharge methods and ion beam methods. Glow discharge methods include plasma etching, reactive ion etching, and glow discharge sputter etching. These techniques have little application in TEM specimen preparation aside from surface cleaning. The reactive ion etching literature is a source for suggesting gas/specimen combinations to perform chemically-assisted ion beam etching (CAIBE), to be discussed below. The other major dry etching category, ion beam methods, includes ion milling, reactive ion beam etching, and CAIBE.

Automated Sample Preparation of Low-k Dielectrics for FESEM

2005 ◽  
Author(s):  
R. R. Cerchiara ◽  
H. A. Cook ◽  
P. E. Fischione ◽  
J. J. Gronsky ◽  
J. M. Matesa ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Ion Beam ◽  
Reactive Ion Etching ◽  
Copper Interconnects ◽  
Plasma Cleaning ◽  
Ion Etching ◽  
Ion Beam Etching ◽  
Automated Sample Preparation ◽  
Microelectronic Materials ◽  
Low K

Abstract The SiLK resins, composed of aromatic hydrocarbons, are a family of highly cross-linked thermoset polymers with isotropic dielectric properties. Patterning of SiLK for high aspect ratio copper interconnects has depended on reactive ion etching with oxygen/nitrogen gas mixtures. Reactive ion etching is therefore also accomplished with reducing plasmas such as nitrogen/hydrogen. An additional plasma cleaning step can be inserted after the reactive ion etching (RIE) step, so that any residual contamination is removed prior to imaging or final sputter coating. Automated sample preparation of microelectronic materials containing high and low-k dielectrics for FESEM is accomplished in this article by combining these techniques: plasma cleaning, ion beam etching, and reactive ion etching. A single RIE chemistry was effective in etching both dielectrics as well as delineating the other phases present.

Mechanism of Dry Etching of Silicon Dioxide: a Case of Direct Reactive Ion Etching

1984 ◽  
Vol 38 ◽  
Author(s):  
Ch. Steinbruchel ◽  
H. W. Lehmann ◽  
K. Frick
Keyword(s):  
Ion Beam ◽  
Reactive Ion Etching ◽  
Plasma Chemistry ◽  
Experimental Conditions ◽  
Ion Etching ◽  
Ion Density ◽  
Ion Beam Etching ◽  
Plasma Species ◽  
Parallel Plate Reactor ◽  
Sputter Etching

AbstractReactive sputter etching of SiO2 with CHF3-O2 plasmas has been investigated in a parallel plate reactor by combining etch rate measurements with concurrent determination of ion densities (using a Langmuir probe) and the composition of neutral plasma species (using a mass spectrometer). Etch rates are found to follow the ion density and to be fairly independent of the plasma chemistry under most experimental conditions. Moreover, a comparison of reactive sputter etching and reactive ion beam etching of SiO2 with CHF3 and CF4 shows that etch yields per incoming ion are essentially independent of the flux of neutral radicals to the substrate. This strongly suggests as the dominant etch mechanism for SiO2 direct reactive ion etching, where ions themselves are the main reactants in the etch reaction. Measured values of etch yields are consistent with this picture.

Parametric investigations and simulations of ion beam etching and reactive ion etching mechanisms for GaAs compounds

1994 ◽  
Vol 28 (1-3) ◽  
pp. 383-386 ◽  
Author(s):  
K. Ketata ◽  
S. Koumetz ◽  
O. Latry ◽  
M. Ketata ◽  
R. Debrie
Keyword(s):  
Ion Beam ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Ion Beam Etching

VIB-3 defect structure and electrical property modifications caused by reactive ion etching and ion beam etching

1983 ◽  
Vol 30 (11) ◽  
pp. 1613-1614
Author(s):  
S.J. Fonash ◽  
R. Singh ◽  
A. Climent ◽  
A. Rohatgi ◽  
P.R. Choudhury ◽  
...  
Keyword(s):  
Electrical Property ◽  
Defect Structure ◽  
Ion Beam ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Ion Beam Etching
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