scholarly journals Electrically conductive silicon oxycarbide thin films prepared from preceramic polymers

Author(s):  
Emmanuel III Ricohermoso ◽  
Florian Klug ◽  
Helmut Schlaak ◽  
Ralf Riedel ◽  
Emanuel Ionescu
2014 ◽  
Vol 104 (6) ◽  
pp. 061906 ◽  
Author(s):  
V. Nikas ◽  
S. Gallis ◽  
M. Huang ◽  
A. E. Kaloyeros ◽  
A. P. D. Nguyen ◽  
...  

2006 ◽  
Vol 24 (4) ◽  
pp. 988-994 ◽  
Author(s):  
Agnieszka Walkiewicz-Pietrzykowska ◽  
J. P. Espinós ◽  
Agustin R. González-Elipe

2011 ◽  
Vol 1299 ◽  
Author(s):  
Ping Du ◽  
I-Kuan Lin ◽  
Yunfei Yan ◽  
Xin Zhang

ABSTRACTSilicon carbide (SiC) has received increasing attention on the integration of microelectro-mechanical system (MEMS) due to its excellent mechanical and chemical stability at elevated temperatures. However, the deposition process of SiC thin films tends to induce relative large residual stress. In this work, the relative low stress material silicon oxide was added into SiC by RF magnetron co-sputtering to form silicon oxycarbide (SiOC) composite films. The composition of the films was characterized by Energy dispersive X-ray (EDX) analysis. The Young’s modulus and hardness of the films were measured by nanoindentation technique. The influence of oxygen/carbon ratio and rapid thermal annealing (RTA) temperature on the residual stress of the composite films was investigated by film-substrate curvature measurement using the Stoney’s equation. By choosing the appropriate composition and post processing, a film with relative low residual stress could be obtained.


2018 ◽  
Vol 29 (22) ◽  
pp. 19578-19587 ◽  
Author(s):  
Chuanmei Liu ◽  
Jiangtao Xu ◽  
Zhengqin Liu ◽  
Xin Ning ◽  
Shouxiang Jiang ◽  
...  

2020 ◽  
Vol 12 (32) ◽  
pp. 36437-36448 ◽  
Author(s):  
Katariina Solin ◽  
Maryam Borghei ◽  
Ozlem Sel ◽  
Hannes Orelma ◽  
Leena-Sisko Johansson ◽  
...  

2009 ◽  
Vol 1220 ◽  
Author(s):  
Yiding Wang ◽  
Li Li ◽  
Junjing Chen ◽  
Zhenyu Song ◽  
Yupeng An ◽  
...  

AbstractThis paper presents results for infrared transparent and conducting thin films based on In2O3. The films have been prepared by magnetrons sputtering equipment with different condition. Typical transmittance of 70%-80% with a film sheet resistance of 80-300Ω/□ in the 3.5-5.0μrn region has been achieved.Optically transparent and electrically conductive semiconductor Oxide films have been extensively studied in recent years. Such films have been prepared by various methods. In general, these films have high visible transmittance, but are opaque in the IR wavelength range of 1-12μm IR transmission. The infrared transparent and electrically conductive thin films are useful in certain important applications. For example, these films can be use as antistatic coatings, and while permitting a reasonable transmission coefficient for IR. Another obvious application is to serve as the conducting electrode for various optical devices where good infrared transmission is important. So, it is important to research indium oxide base infrared (3-5 um) transparent conduction thin films.It has been developed that preparation condition influence on properties of thin films. Such as the sputtering time, and pressure, and power, and the substrate temperature, had great influence on the crystal structure, optical and electrical properties of In2O3-based thin films.The In2O3-based thin films obtained were characterized and analyzed by X-ray Diffractometer (XRD), Atomic Force Microscope (AFM), Vander Pauw Method and Fourier Transform Infrared Spectroscopy (FTIR).


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