Type of precursor and synthesis of silicon oxycarbide (SiOxCyH) thin films with a surfatron microwave oxygen/argon plasma

2006 ◽  
Vol 24 (4) ◽  
pp. 988-994 ◽  
Author(s):  
Agnieszka Walkiewicz-Pietrzykowska ◽  
J. P. Espinós ◽  
Agustin R. González-Elipe
Keyword(s):  
Thin Films ◽  
Argon Plasma ◽  
Silicon Oxycarbide

scholarly journals The origin of white luminescence from silicon oxycarbide thin films

2014 ◽  
Vol 104 (6) ◽  
pp. 061906 ◽  
Author(s):  
V. Nikas ◽  
S. Gallis ◽  
M. Huang ◽  
A. E. Kaloyeros ◽  
A. P. D. Nguyen ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Oxycarbide ◽  
White Luminescence

Residual Stress in Sputtered Silicon Oxycarbide Thin Films

2011 ◽  
Vol 1299 ◽  
Author(s):  
Ping Du ◽  
I-Kuan Lin ◽  
Yunfei Yan ◽  
Xin Zhang
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Elevated Temperatures ◽  
Silicon Oxide ◽  
Composite Films ◽  
Deposition Process ◽  
Silicon Oxycarbide ◽  
X Ray ◽  
Curvature Measurement ◽  
Film Substrate

ABSTRACTSilicon carbide (SiC) has received increasing attention on the integration of microelectro-mechanical system (MEMS) due to its excellent mechanical and chemical stability at elevated temperatures. However, the deposition process of SiC thin films tends to induce relative large residual stress. In this work, the relative low stress material silicon oxide was added into SiC by RF magnetron co-sputtering to form silicon oxycarbide (SiOC) composite films. The composition of the films was characterized by Energy dispersive X-ray (EDX) analysis. The Young’s modulus and hardness of the films were measured by nanoindentation technique. The influence of oxygen/carbon ratio and rapid thermal annealing (RTA) temperature on the residual stress of the composite films was investigated by film-substrate curvature measurement using the Stoney’s equation. By choosing the appropriate composition and post processing, a film with relative low residual stress could be obtained.

Effect of Flexible Substrates on the Structural and Optical Properties of ZnO Films Deposited by Sputtering Method

2015 ◽  
Vol 1107 ◽  
pp. 678-683 ◽  
Author(s):  
Lam Mui Li ◽  
Azmizam Manie Mani ◽  
Saafie Salleh ◽  
Afishah Alias
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Low Cost ◽  
Argon Plasma ◽  
Optical Transmittance ◽  
Zno Thin Films ◽  
Plastic Substrate ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray

Zinc Oxide (ZnO) has attracted much attention because of its high optical transmittance approximately ~80 % with a wide band gap of (3.3 eV at 300 K) and a relatively low cost material. ZnO thin films were deposited on plastic substrate using RF powered magnetron sputtering method. The target used is ZnO disk with 99.99 % purity. The sputtering processes are carried out with argon gas that flow from 10-15 sccm. Argon is used to sputter the ZnO target because the ability of argon that can remove ZnO layer effectively by sputtering with argon plasma bombardment. The deposited ZnO thin films are characterized using X-Ray Diffraction (XRD) and UV-Vis Spectrometer. The analysis of X-ray diffraction show that good crystalline quality occurs at nominal thickness of 400 nm. The optical studies showed that all the thin films have high average transmittance of approximately 80 % and the estimated value of optical band gap is within 3.1 eV-3.3 eV range.

Intense blue-white luminescence from amorphous silicon oxycarbide (a-SiC x O y ) thin films

2011 ◽  
Author(s):  
Vasileios Nikas ◽  
Spyros Gallis ◽  
Himani Suhag ◽  
Mengbing Huang ◽  
Alain E. Kaloyeros
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Silicon Oxycarbide ◽  
White Luminescence

scholarly journals Introducing SiOC as novel dielectric platform for photonic integration

2020 ◽  
Vol 16 (1) ◽  
pp. 81-84
Author(s):  
Faisal Ahmed Memon ◽  
Imran Ali Qureshi ◽  
Abdul Latif Memon ◽  
Erum Saba
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Large Scale ◽  
Rf Sputtering ◽  
Silicon Oxycarbide ◽  
Index Of Refraction ◽  
Photonic Integration ◽  
Index Contrast ◽  
Photonic Waveguides ◽  
First Time

In this paper, we explore the potential of silicon oxycarbide (SiOC) as a novel dielectric platform for integrated photonics and present photonic waveguides. The interesting features of SiOC are its wide tunable window of refractive index and low absorption, that are considered key for large scale photonic integration. It is possible to tune SiOC refractive index from silica glass (1.45) to silicon carbide (3.2) that allows to realize a myriad of photonic passive devices. We have prepared SiOC thin films by employing reactive RF sputtering technique and examined their structural and optical properties using several techniques such as SEM, AFM, ellipsometry, profilometry, and prism coupling. For the first time, SiOC thin films with index of refraction of 1.554 at the standard telecom wavelength 1.55 μm are exploited for the fabrication of photonic waveguides and the propagation losses around 0.37 dB/mm are measured. SiOC photonic waveguides exhibit relatively higher index contrast with silica cladding when compared to traditional Ge-doped silica platform.

Luminescence properties of Yb3+-Tb3+ co-doped amorphous silicon oxycarbide thin films

2019 ◽  
Vol 92 ◽  
pp. 16-21
Author(s):  
Loreleyn F. Flores ◽  
Karem Y. Tucto ◽  
Jorge A. Guerra ◽  
Jan A. Töfflinger ◽  
Erick S. Serquen ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Silicon Oxycarbide ◽  
Luminescence Properties ◽  
Co Doped
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