Room-temperature minority-carrier injection-enhanced recovery of radiation-induced defects in p-InGaP and solar cells

2000 ◽  
Vol 76 (18) ◽  
pp. 2559-2561 ◽  
Author(s):  
Aurangzeb Khan ◽  
Masafumi Yamaguchi ◽  
Jacques C. Bourgoin ◽  
N. de Angelis ◽  
Tatsuya Takamoto
Keyword(s):  
Solar Cells ◽  
Room Temperature ◽  
Minority Carrier ◽  
Enhanced Recovery ◽  
Carrier Injection ◽  
Radiation Induced ◽  
Induced Defects

Minority-Carrier Injection-Enhanced Recovery of Radiation-Induced Defects in n+p AlInGaP Solar Cells

2006 ◽  
Author(s):  
Hae-seok Lee ◽  
Masafumi Yamaguchi ◽  
Nicholas J. Ekins-daukes ◽  
Aurangzeb Khan ◽  
Tatsuya Takamoto ◽  
...  
Keyword(s):  
Solar Cells ◽  
Minority Carrier ◽  
Enhanced Recovery ◽  
Carrier Injection ◽  
Radiation Induced ◽  
Induced Defects

Radiation-Resistant Properties of Inp-Related Materials

1994 ◽  
Vol 373 ◽  
Author(s):  
Masafumi Yamaguchi ◽  
Koshi Ando ◽  
Hidehiko Kamada
Keyword(s):  
Gamma Rays ◽  
Minority Carrier ◽  
Deep Level ◽  
High Energy ◽  
Carrier Injection ◽  
High Energy Electrons ◽  
Radiation Resistant ◽  
Radiation Induced ◽  
Transient Spectroscopy ◽  
Induced Defects

AbstractIrradiation effects of high-energy electrons and protons, and 60Co gamma-rays on InP-related materials have been examined in comparison with those of GaAs and Si. Superior radiation-resistance of InP-related materials and their devices compared to GaAs and Si has been found by using deep-level transient spectroscopy (DLTS), photoluminescence (PL) and properties of devices such as solar cells and lightemitting devices. Moreover, minority-carrier injection enhanced annealing phenomena of radiation-induced defects in InP-related materials have also been observed even at low temperature of around 150K.

Room‐temperature annealing of radiation‐induced defects in InP solar cells

1984 ◽  
Vol 45 (11) ◽  
pp. 1206-1208 ◽  
Author(s):  
Masafumi Yamaguchi ◽  
Yoshio Itoh ◽  
Koushi Ando
Keyword(s):  
Solar Cells ◽  
Room Temperature ◽  
Radiation Induced ◽  
Induced Defects

Quenched-In Defects in CW Laser-Annealed Si

1981 ◽  
Vol 4 ◽  
Author(s):  
N.H. Sheng ◽  
J.L. Merz
Keyword(s):  
Laser Power ◽  
Room Temperature ◽  
Laser Annealing ◽  
Minority Carrier ◽  
Deep Hole ◽  
Carrier Injection ◽  
Furnace Annealing ◽  
Shallow Level ◽  
Cw Laser ◽  
Induced Defects

ABSTRACTDLTS has been used to investigate the nature of CW laser-induced defects in ion-implanted Si. A dominant hole trap (∼Ev + 0.45 eV), whose concentration depends on laser power, was observed immediately after sample preparation. This defect is not stable at room temperature; instead, it decays as a function of time, transmuting to a shallow level at Ev + 0.10 eV. The recovery of the Ev + 0.45 eV level can be stimulated by low temperature thermal annealing or by minority carrier injection. By comparing these defects in laser-annealed samples with defects produced by furnace annealing followed by rapid cooling, and with other published results, the laser-induced defects have beenidentified as interstitial Fe and Fe-B pairs. Experiments suggest that elevated substrate temperature during laser annealing may inhibit the formation of these deep hole traps.

Room-Temperature Annealing Effects on Radiation-Induced Defects in InP Crystals and Solar Cells

1986 ◽  
Vol 25 (Part 1, No. 11) ◽  
pp. 1650-1656 ◽  
Author(s):  
Masafumi Yamaguchi ◽  
Yoshio Itoh ◽  
Koushi Ando ◽  
Akio Yamamoto
Keyword(s):  
Solar Cells ◽  
Room Temperature ◽  
Annealing Effects ◽  
Radiation Induced ◽  
Induced Defects

scholarly journals MINIMAL VARIATION OF DEFECT STRUCTURE DUE TO THE ORDER OF ROOM TEMPERATURE HYDROGEN ISOTOPE IMPLANTATION AND SELF-ION IRRADIATION IN NICKEL

MRS Advances ◽  
2016 ◽  
Vol 1 (42) ◽  
pp. 2887-2892
Author(s):  
Brittany Muntifering ◽  
Jianmin Qu ◽  
Khalid Hattar
Keyword(s):  
Dislocation Loop ◽  
Hydrogen Isotope ◽  
Room Temperature ◽  
Ion Irradiation ◽  
In Situ Tem ◽  
Loop Formation ◽  
Radiation Induced ◽  
Formation And Evolution ◽  
And Performance ◽  
Induced Defects

ABSTRACTThe formation and stability of radiation-induced defects in structural materials in reactor environments significantly effects their integrity and performance. Hydrogen, which may be present in significant quantities in future reactors, may play an important role in defect evolution. To characterize the effect of hydrogen on cascade damage evolution, in-situ TEM self-ion irradiation and deuterium implantation was performed, both sequentially and concurrently, on nickel. This paper presents preliminary results characterizing dislocation loop formation and evolution during room temperature deuterium implantation and self-ion irradiation and the consequence of the sequence of irradiation. Hydrogen isotope implantation at room temperature appears to have little or no effect on the final dislocation loop structures that result from self-ion irradiation, regardless of the sequence of irradiation. Tilting experiments emphasize the importance of precise two-beam conditions for characterizing defect size and structure.

Development of High-Performance GaAs Solar Cells on Large-Grain Polycrystalline Ge Substrates

1995 ◽  
Vol 403 ◽  
Author(s):  
R. Venkatasubramanian ◽  
B. O'Quinn ◽  
J. S. Hills ◽  
M. L. Timmons ◽  
D. P. Malta
Keyword(s):  
Solar Cells ◽  
High Performance ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Cross Sectional ◽  
Plan View ◽  
Electron Beam Induced Current ◽  
Induced Defects

AbstractThe characterization of MOCVD-grown GaAs-AlGaAs materials and GaAs p+n junctions on poly-Ge substrates is presented. Minority carrier lifetime in GaAs-AIGaAs double-hetero (DH) structures grown on these substrates and the variation of lifetimes across different grainstructures are discussed. Minority-carrier diffusion lengths in polycrystalline GaAs p+-n junctions were evaluated by cross-sectional electron-beam induced current (EBIC) scans. The junctions were also studied by plan-view EBIC imaging. Optimization studies of GaAs solar cell on poly-Ge are discussed briefly. The effect of various polycrystalline substrate-induced defects on performance of GaAs solar cells are presented.

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