Defect Detection Differences between Launch-Off-Shift and Launch-Off-Capture in Sense-Amplifier-Based Flip-Flop Testing

2009 ◽  
Author(s):  
Haluk Konuk
Keyword(s):  
Defect Detection ◽  
Flip Flop ◽  
Sense Amplifier

Sense amplifier based RADHARD flip flop design

2004 ◽  
Vol 51 (6) ◽  
pp. 3811-3815 ◽  
Author(s):  
Weizhong Wang ◽  
Haiyan Gong
Keyword(s):  
Flip Flop ◽  
Sense Amplifier

Cross-Layer Dual Modular Redundancy Hardened Scheme of Flip-Flop Design Based on Sense-Amplifier

2020 ◽  
pp. 2120003
Author(s):  
Zhengfeng Huang ◽  
Zian Su ◽  
Tianming Ni ◽  
Qi Xu ◽  
Haochen Qi ◽  
...  
Keyword(s):  
Power Consumption ◽  
High Speed ◽  
Fault Tolerant ◽  
Cross Layer ◽  
Charge Sharing ◽  
Single Node ◽  
Flip Flop ◽  
Sense Amplifier ◽  
Modular Redundancy ◽  
Voltage Swing

As the demand for low-power and high-speed logic circuits increases, the design of differential flip-flops based on sense-amplifier (SAFF), which have excellent power and speed characteristics, has become more and more popular. Conventional SAFF (Con SAFF) and improved SAFF designs focus more on the improvement of speed and power consumption, but ignore their Single-Event-Upset (SEU) sensitivity. In fact, SAFF is more susceptible to particle impacts due to the small voltage swing required for differential input in the master stage. Based on the SEU vulnerability of SAFF, this paper proposes a novel scheme, namely cross-layer Dual Modular Redundancy (DMR), to improve the robustness of SAFF. That is, unit-level DMR technology is performed in the master stage, while transistor-level stacking technology is used in the slave stage. This scheme can be applied to some current typical SAFF designs, such as Con SAFF, Strollo SAFF, Ahmadi SAFF, Jeong SAFF, etc. Detailed HSPICE simulation results demonstrate that hardened SAFF designs can not only fully tolerate the Single Node Upset of sensitive nodes, but also partially tolerate the Double Node Upset caused by charge sharing. Besides, compared with the conventional DMR hardened scheme, the proposed cross-layer DMR hardened scheme not only has the same fault-tolerant characteristics, but also greatly reduces the delay, area and power consumption.

Single‐ended structure sense‐amplifier‐based flip‐flop for low‐power systems

2015 ◽  
Vol 51 (1) ◽  
pp. 20-21 ◽  
Author(s):  
Jin‐Fa Lin ◽  
Yin‐Tsung Hwang ◽  
Chen‐Syuan Wong ◽  
Ming‐Hwa Sheu
Keyword(s):  
Power Systems ◽  
Low Power ◽  
Flip Flop ◽  
Sense Amplifier

scholarly journals Time Amplifier Based Bang-Bang Phase Frequency Detector in 0.18μm CMOS Technology

2019 ◽  
Vol 9 (1S3) ◽  
pp. 85-89
Keyword(s):  
Dead Zone ◽  
Cmos Technology ◽  
Maximum Frequency ◽  
Flip Flop ◽  
Phase Frequency Detector ◽  
Sense Amplifier ◽  
Time Amplifier ◽  
Frequency Detector ◽  
Cmos Implementation

A CMOS Implementation of Time amplifier (TA) based Bang-Bang Phase Frequency Detector (BBPFD) using Sense amplifier based flip flop (SAFF) is presented in this paper using 0.18μm CMOS technology. A time amplifier based on feedback output generator concept is utilized in minimizing the metastability and increasing the gain of TA which in turn boosts the gain of Phase Frequency Detector (PFD). Also, a modified SAFF was built in CMOS 0.18μm technology at 1.8V which further reduces the hysteresis and metastability aspect related to PFD. The proposed PFD works at a maximum frequency of 4GHz consuming 0.46mW of power with no dead zone.

Sign in / Sign up

Export Citation Format

Share Document