An SRAM Design-for-Diagnosis Solution Based on Write Driver Voltage Sensing

2008 ◽  
Author(s):  
A. Ney ◽  
P. Girard ◽  
S. Pravossoudovitch ◽  
A. Virazel ◽  
M. Bastian ◽  
...  
Keyword(s):  
Voltage Sensing ◽  
Sram Design

New Molecular Scaffolds for Fluorescent Voltage Indicators

2018 ◽  
Author(s):  
Steven Boggess ◽  
Shivaani Gandhi ◽  
Brian Siemons ◽  
Nathaniel Huebsch ◽  
Kevin Healy ◽  
...  
Keyword(s):  
Membrane Potential ◽  
Action Potentials ◽  
Induced Pluripotent Stem Cell ◽  
Molecular Wire ◽  
Voltage Sensing ◽  
Design Synthesis ◽  
Cardiac Action ◽  
Action Potential Waveform ◽  
Induced Pluripotent ◽  
Voltage Sensing Domain

<div> <p>The ability to non-invasively monitor membrane potential dynamics in excitable cells like neurons and cardiomyocytes promises to revolutionize our understanding of the physiology and pathology of the brain and heart. Here, we report the design, synthesis, and application of a new class of fluorescent voltage indicator that makes use of a fluorene-based molecular wire as a voltage sensing domain to provide fast and sensitive measurements of membrane potential in both mammalian neurons and human-derived cardiomyocytes. We show that the best of the new probes, fluorene VoltageFluor 2 (fVF 2) readily reports on action potentials in mammalian neurons, detects perturbations to cardiac action potential waveform in human induced pluripotent stem cell (hiPSC)-derived cardiomyocytes, shows a substantial decrease in phototoxicity compared to existing molecular wire-based indicators, and can monitor cardiac action potentials for extended periods of time. Together, our results demonstrate the generalizability of a molecular wire approach to voltage sensing and highlights the utility of fVF 2 for interrogating membrane potential dynamics.</p> </div>

Quantum Calculation of Proton and Other Charge Transfer Steps in Voltage Sensing in the Kv1.2 Channel

2019 ◽  
Author(s):  
Alisher M Kariev ◽  
Michael Green
Keyword(s):  
Charge Transfer ◽  
Energy Charge ◽  
Quantum Calculation ◽  
Quantum Calculations ◽  
Gating Current ◽  
Transmembrane Segment ◽  
Voltage Sensing ◽  
Standard Models ◽  
Charge Displacement ◽  
Voltage Sensing Domain

Quantum calculations on 976 atoms of the voltage sensing domain of the K<sub>v</sub>1.2 channel, with protons in several positions, give energy, charge transfer, and other properties. Motion of the S4 transmembrane segment that accounts for gating current in standard models is shown not to occur; there is H<sup>+ </sup>transfer instead. The potential at which two proton positions cross in energy approximately corresponds to the gating potential for the channel. The charge displacement seems approximately correct for the gating current. Two mutations are accounted for (Y266F, R300cit, cit =citrulline). The primary conclusion is that voltage sensing depends on H<sup>+</sup> transfer, not motion of arginine charges.

Buried Bitline for sub-5nm SRAM Design

2020 ◽  
Author(s):  
R. Mathur ◽  
M. Bhargava ◽  
S. Salahuddin ◽  
P. Schuddinck ◽  
J. Ryckaert ◽  
...  
Keyword(s):  
Sram Design

Opto-mechanical modeling and experimental implementation of an FBG-based piezoelectric bimorph actuator for high voltage sensing applications

2021 ◽  
pp. 1045389X2110282
Author(s):  
Raúl E Jiménez ◽  
José P Montoya ◽  
Rodrigo Acuna Herrera
Keyword(s):  
High Voltage ◽  
Good Accuracy ◽  
Correction Term ◽  
Experimental Results ◽  
Mechanical Modeling ◽  
Piezoelectric Bimorph ◽  
Linear Strain ◽  
Voltage Sensing ◽  
Sensing Applications ◽  
Experimental Implementation

This paper proposes a highly simplified optical voltage sensor by using a piezoelectric bimorph and a Fiber Bragg Grating (FBG) that can be used for high voltage applications with a relatively good accuracy and stability. In this work the theoretical framework for the whole opto-mechanical operation of the optical sensor is detailed and compared to experimental results. In the analysis, a correction term to the electric field is derived to account for the linear strain distribution across the piezoelectric layer improving the designing equations and giving more criteria for future developments. Finally, some experimental results from a laboratory scale optical-based high voltage sensing setup are discussed, and shown to be in excellent agreement with theoretical expected behavior for different voltage magnitudes.

Sign in / Sign up

Export Citation Format

Share Document