Multiple Workfunction High Performance FinFETs for Ultra-low Voltage Operation

2018 ◽  
Author(s):  
M. Togo ◽  
R. Asra ◽  
P. Balasubramaniam ◽  
X. Zhang ◽  
H. Yu ◽  
...  
Keyword(s):  
High Performance ◽  
Low Voltage ◽  
Low Voltage Operation

Current State of Biological High-Resolution Scanning Electron Microscopy

1988 ◽  
Vol 46 ◽  
pp. 180-181 ◽  
Author(s):  
Klaus-Ruediger Peters
Keyword(s):  
High Performance ◽  
Low Voltage ◽  
Backscattered Electrons ◽  
Lens Position ◽  
Low Voltage Operation ◽  
Signal Collection ◽  
Probe Size ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Scanning Electron

A new generation of high performance field emission scanning electron microscopes (FSEM) is now commercially available (JEOL 890, Hitachi S 900, ISI OS 130-F) characterized by an "in lens" position of the specimen where probe diameters are reduced and signal collection improved. Additionally, low voltage operation is extended to 1 kV. Compared to the first generation of FSEM (JE0L JSM 30, Hitachi S 800), which utilized a specimen position below the final lens, specimen size had to be reduced but useful magnification could be impressively increased in both low (1-4 kV) and high (5-40 kV) voltage operation, i.e. from 50,000 to 200,000 and 250,000 to 1,000,000 x respectively.At high accelerating voltage and magnification, contrasts on biological specimens are well characterized1 and are produced by the entering probe electrons in the outmost surface layer within -vl nm depth. Backscattered electrons produce only a background signal. Under these conditions (FIG. 1) image quality is similar to conventional TEM (FIG. 2) and only limited at magnifications >1,000,000 x by probe size (0.5 nm) or non-localization effects (%0.5 nm).

BaTiO3/ Teflon Nanocomposite Ferroelectric Thin Films for Low Voltage Electrowetting Systems

2018 ◽  
Vol 281 ◽  
pp. 616-621
Author(s):  
Wei Qiang Wang ◽  
Jia Qi Niu ◽  
Yan Su
Keyword(s):  
Thin Film ◽  
Dielectric Layer ◽  
Nanocomposite Film ◽  
High Performance ◽  
Low Voltage ◽  
Cost Effective ◽  
Frequency Change ◽  
Nanocomposite Thin Film ◽  
Teflon Af ◽  
Low Voltage Operation

We present a simple and cost effective method for the design and fabrication of electrowetting devices using a nanocomposite thin film of BaTiO3 and Teflon-AF as the dielectric layer to achieve low voltage operation. The nanocomposite film is prepared by using Teflon-AF as matrix and BaTiO3 nanoparticles as the filler material. The solution is spin coated to deposit thin film on metal electrodes. The characterization results show that the nanocomposite thin film can serve as the dielectric for EWOD with a high dielectric constant and a crack free hydrophobic film. To test the electrowetting effect, the variation of droplet contact angle achieved with DC voltage, AC voltage and AC frequency change are fully experimented. The EWOD device with nanocomposite dielectric layer also manipulates water droplet at low driving voltages. This study shows the potential of using ferroelectric nanocomposite film as the dielectric layer in high-performance EWOD devices.

scholarly journals A design of low voltage OPAMP using split-length transistors

2014 ◽  
Vol 17 (1) ◽  
pp. 62-70
Author(s):  
Khanh Trung Le ◽  
Tu Trong Bui ◽  
Hung Duc Le ◽  
Kha Cong Pham
Keyword(s):  
High Performance ◽  
Low Voltage ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Feedback Systems ◽  
Advanced Technique ◽  
Low Voltage Operation ◽  
Feedback Compensation ◽  
Indirect Feedback ◽  
Low Supply Voltage

In the paper, we present a design of a low voltage Operation Amplifier (OPAMP) circuit using split-length transistors. Indirect feedback compensation is an advanced technique used to stabilize the operation of an OPAMP. Cascode transistors are usually implemented for indirect feedback systems. However, these transistors are not suitable for low voltage design. In this study, we have taken advantage of split-length transistors and indirect feedback compensation technique to design a high performance OPAMP. As a result, the OPAMP operates not only at low supply voltage but also at high frequency. The OPAMP has been designed and fabricated in a 0.18um CMOS technology. This OPAMP achieves 100 dB gain, 90 MHz unity gain frequency and 60 degrees phase margin at 2 V supply voltage.

High Performance Multi-Level Non-Volatile Polymer Memory with Solution-Blended Ferroelectric Polymer/High-kInsulators for Low Voltage Operation

2013 ◽  
Vol 23 (44) ◽  
pp. 5484-5493 ◽  
Author(s):  
Sun Kak Hwang ◽  
Insung Bae ◽  
Suk Man Cho ◽  
Richard Hahnkee Kim ◽  
Hee Joon Jung ◽  
...  
Keyword(s):  
High Performance ◽  
Low Voltage ◽  
Ferroelectric Polymer ◽  
Low Voltage Operation ◽  
Multi Level ◽  
Polymer Memory

An 8T-SRAM for Variability Tolerance and Low-Voltage Operation in High-Performance Caches

2008 ◽  
Vol 43 (4) ◽  
pp. 956-963 ◽  
Author(s):  
Leland Chang ◽  
Robert K. Montoye ◽  
Yutaka Nakamura ◽  
Kevin A. Batson ◽  
Richard J. Eickemeyer ◽  
...  
Keyword(s):  
High Performance ◽  
Low Voltage ◽  
Low Voltage Operation

High resolution at low voltage: A new approach

1989 ◽  
Vol 47 ◽  
pp. 76-77
Author(s):  
Arthur V. Jones
Keyword(s):  
Low Voltage ◽  
Emission Sources ◽  
New Approach ◽  
Design Concepts ◽  
Probe Diameter ◽  
Low Voltage Operation ◽  
Sufficient Intensity ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Immersion Type

With the introduction of field-emission sources and “immersion-type” objective lenses, the resolution obtainable with modern scanning electron microscopes is approaching that obtainable in STEM and TEM-but only with specific types of specimens. Bulk specimens still suffer from the restrictions imposed by internal scattering and the need to be conducting. Advances in coating techniques have largely overcome these problems but for a sizeable body of specimens, the restrictions imposed by coating are unacceptable.For such specimens, low voltage operation, with its low beam penetration and freedom from charging artifacts, is the method of choice.Unfortunately the technical dificulties in producing an electron beam sufficiently small and of sufficient intensity are considerably greater at low beam energies — so much so that a radical reevaluation of convential design concepts is needed.The probe diameter is usually given by

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