High Performance Multi-Level Non-Volatile Polymer Memory with Solution-Blended Ferroelectric Polymer/High-kInsulators for Low Voltage Operation

2013 ◽  
Vol 23 (44) ◽  
pp. 5484-5493 ◽  
Author(s):  
Sun Kak Hwang ◽  
Insung Bae ◽  
Suk Man Cho ◽  
Richard Hahnkee Kim ◽  
Hee Joon Jung ◽  
...  
Keyword(s):  
High Performance ◽  
Low Voltage ◽  
Ferroelectric Polymer ◽  
Low Voltage Operation ◽  
Multi Level ◽  
Polymer Memory

Multi-level operation of three-dimensionally stacked non-volatile ferroelectric polymer memory with high-performance hole-injection layer

2019 ◽  
Vol 75 ◽  
pp. 105394 ◽  
Author(s):  
Sun Kak Hwang ◽  
Kang Lib Kim ◽  
Suk Man Cho ◽  
Tae Joon Park ◽  
Beomjin Jeong ◽  
...  
Keyword(s):  
High Performance ◽  
Hole Injection ◽  
Hole Injection Layer ◽  
Ferroelectric Polymer ◽  
Multi Level ◽  
Polymer Memory

Current State of Biological High-Resolution Scanning Electron Microscopy

1988 ◽  
Vol 46 ◽  
pp. 180-181 ◽  
Author(s):  
Klaus-Ruediger Peters
Keyword(s):  
High Performance ◽  
Low Voltage ◽  
Backscattered Electrons ◽  
Lens Position ◽  
Low Voltage Operation ◽  
Signal Collection ◽  
Probe Size ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Scanning Electron

A new generation of high performance field emission scanning electron microscopes (FSEM) is now commercially available (JEOL 890, Hitachi S 900, ISI OS 130-F) characterized by an "in lens" position of the specimen where probe diameters are reduced and signal collection improved. Additionally, low voltage operation is extended to 1 kV. Compared to the first generation of FSEM (JE0L JSM 30, Hitachi S 800), which utilized a specimen position below the final lens, specimen size had to be reduced but useful magnification could be impressively increased in both low (1-4 kV) and high (5-40 kV) voltage operation, i.e. from 50,000 to 200,000 and 250,000 to 1,000,000 x respectively.At high accelerating voltage and magnification, contrasts on biological specimens are well characterized1 and are produced by the entering probe electrons in the outmost surface layer within -vl nm depth. Backscattered electrons produce only a background signal. Under these conditions (FIG. 1) image quality is similar to conventional TEM (FIG. 2) and only limited at magnifications >1,000,000 x by probe size (0.5 nm) or non-localization effects (%0.5 nm).

BaTiO3/ Teflon Nanocomposite Ferroelectric Thin Films for Low Voltage Electrowetting Systems

2018 ◽  
Vol 281 ◽  
pp. 616-621
Author(s):  
Wei Qiang Wang ◽  
Jia Qi Niu ◽  
Yan Su
Keyword(s):  
Thin Film ◽  
Dielectric Layer ◽  
Nanocomposite Film ◽  
High Performance ◽  
Low Voltage ◽  
Cost Effective ◽  
Frequency Change ◽  
Nanocomposite Thin Film ◽  
Teflon Af ◽  
Low Voltage Operation

We present a simple and cost effective method for the design and fabrication of electrowetting devices using a nanocomposite thin film of BaTiO3 and Teflon-AF as the dielectric layer to achieve low voltage operation. The nanocomposite film is prepared by using Teflon-AF as matrix and BaTiO3 nanoparticles as the filler material. The solution is spin coated to deposit thin film on metal electrodes. The characterization results show that the nanocomposite thin film can serve as the dielectric for EWOD with a high dielectric constant and a crack free hydrophobic film. To test the electrowetting effect, the variation of droplet contact angle achieved with DC voltage, AC voltage and AC frequency change are fully experimented. The EWOD device with nanocomposite dielectric layer also manipulates water droplet at low driving voltages. This study shows the potential of using ferroelectric nanocomposite film as the dielectric layer in high-performance EWOD devices.

scholarly journals A design of low voltage OPAMP using split-length transistors

2014 ◽  
Vol 17 (1) ◽  
pp. 62-70
Author(s):  
Khanh Trung Le ◽  
Tu Trong Bui ◽  
Hung Duc Le ◽  
Kha Cong Pham
Keyword(s):  
High Performance ◽  
Low Voltage ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Feedback Systems ◽  
Advanced Technique ◽  
Low Voltage Operation ◽  
Feedback Compensation ◽  
Indirect Feedback ◽  
Low Supply Voltage

In the paper, we present a design of a low voltage Operation Amplifier (OPAMP) circuit using split-length transistors. Indirect feedback compensation is an advanced technique used to stabilize the operation of an OPAMP. Cascode transistors are usually implemented for indirect feedback systems. However, these transistors are not suitable for low voltage design. In this study, we have taken advantage of split-length transistors and indirect feedback compensation technique to design a high performance OPAMP. As a result, the OPAMP operates not only at low supply voltage but also at high frequency. The OPAMP has been designed and fabricated in a 0.18um CMOS technology. This OPAMP achieves 100 dB gain, 90 MHz unity gain frequency and 60 degrees phase margin at 2 V supply voltage.

Multiple Workfunction High Performance FinFETs for Ultra-low Voltage Operation

2018 ◽  
Author(s):  
M. Togo ◽  
R. Asra ◽  
P. Balasubramaniam ◽  
X. Zhang ◽  
H. Yu ◽  
...  
Keyword(s):  
High Performance ◽  
Low Voltage ◽  
Low Voltage Operation

Neoteric Hybrid Multilevel Cascade Inverter Based on Low Switch Numbers Along with Low Voltage Stress: Design, Analysis, Verification

2017 ◽  
Vol 8 (1) ◽  
pp. 92
Author(s):  
Rasool Esmailzadeh ◽  
A. Ajami ◽  
M.R. Banaei
Keyword(s):  
Power Systems ◽  
Output Voltage ◽  
High Performance ◽  
High Efficiency ◽  
Low Voltage ◽  
Maximum Output ◽  
Dc Voltage ◽  
Multilevel Inverters ◽  
Voltage Stress ◽  
Multi Level

Abstract: With the purpose of rein in the high voltage of flexible power systems, renovation and amendment of multi-level structures aimed at acquisition of high quality voltage is certainly required. In this regard, robust topology must be occupied that encompass the maximum output voltage levels along with minimum of switch number, of course, with taking into account of Peak Inverse Voltage (PIV). In this paper, a neoteric high-performance multilevel cascaded inverter is suggested up to the problem of repetitive output levels to be unraveled and also number of output voltage levels to be maximized. It has been constructed by series-connected multilevel inverters blocks and three-level inverter. The simulation results along with experimental results extracted by manufactured prototype have transparently approved high efficiency of proposed inverter as well as its feasibility. Apart from above, new mathematical approach has been presented to calculate and define the DC voltage sources magnitudes in asymmetric converter.

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