VFB Roll-off in HfO2 Gate Stack after High Temperature Annealing Process - A Crucial Role of Out-diffused Oxygen from HfO2 to Si

2007 ◽  
Author(s):  
K. Akiyama ◽  
W. Wang ◽  
W. Mizubayashi ◽  
M. Ikeda ◽  
H. Ota ◽  
...  
Keyword(s):  
High Temperature ◽  
Crucial Role ◽  
Annealing Process ◽  
High Temperature Annealing ◽  
Gate Stack

scholarly journals Alkali doping of graphene: The crucial role of high-temperature annealing

2016 ◽  
Vol 94 (20) ◽  
Author(s):  
A. Khademi ◽  
E. Sajadi ◽  
P. Dosanjh ◽  
D. A. Bonn ◽  
J. A. Folk ◽  
...  
Keyword(s):  
High Temperature ◽  
Crucial Role ◽  
High Temperature Annealing ◽  
Alkali Doping

A novel porous substrate for the growth of high quality GaN crystals by HVPE

RSC Advances ◽  
2014 ◽  
Vol 4 (66) ◽  
pp. 35106-35111 ◽  
Author(s):  
Yuanbin Dai ◽  
Yongzhong Wu ◽  
Lei Zhang ◽  
Yongliang Shao ◽  
Yuan Tian ◽  
...  
Keyword(s):  
Residual Stress ◽  
High Temperature ◽  
Defect Density ◽  
Annealing Process ◽  
High Temperature Annealing ◽  
Porous Substrate ◽  
High Quality

This manuscript describes a high temperature annealing process to prepare a porous substrate. The substrate was used for the growth of GaN by using HVPE method to provide reduced residual stress and low defect density.

High Temperature Annealing SP-AlN Ameliorates the Crystal Quality ofAl0.5Ga0.5N Regrowth

2020 ◽  
Vol 1014 ◽  
pp. 14-21
Author(s):  
Wen Kai Yue ◽  
Zhi Min Li ◽  
Xiao Wei Zhou ◽  
Jin Xing Wu ◽  
Pei Xian Li
Keyword(s):  
Raman Spectroscopy ◽  
High Temperature ◽  
Annealing Process ◽  
High Temperature Annealing ◽  
High Quality ◽  
Rocking Curve ◽  
Stress Mode ◽  
Aln Film ◽  
Before And After ◽  
Screw Dislocation Density

In this study, the effect of a high-temperature annealing process on AlN is investigated. The high-temperature annealing process reduces the screw dislocation density of the AlN film to 2.1x107 cm-2. The AlN surface is highly flat. Through HRXRD and Raman spectroscopy, the stress mode changes in the sputtered AlN film before and after high-temperature annealing were studied in depth. Based on the HTA-AlN template, a high-quality, high-Al composition AlGaN epitaxial wafer, with a (0002) plane rocking curve FWHM of 246 arcsec , was prepared at 1080°C The growth mode of AlGaN grown directly on the AlN template at low temperature is summarized.

Role of oxygen diffusion in the dislocation reduction of epitaxial AlN on sapphire during high-temperature annealing

2021 ◽  
Vol 130 (20) ◽  
pp. 203101
Author(s):  
Leonardo Cancellara ◽  
Toni Markurt ◽  
Tobias Schulz ◽  
Martin Albrecht ◽  
Sylvia Hagedorn ◽  
...  
Keyword(s):  
High Temperature ◽  
Oxygen Diffusion ◽  
High Temperature Annealing ◽  
Dislocation Reduction
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