Extended defects in hydrogen-implanted (111) silicon wafer treated by high temperature annealing process

2004 ◽  
Vol 47 (6) ◽  
pp. 658-663
Author(s):  
Qinghua Xiao ◽  
Hailing Tu
Keyword(s):  
High Temperature ◽  
Silicon Wafer ◽  
Annealing Process ◽  
Extended Defects ◽  
High Temperature Annealing

A novel porous substrate for the growth of high quality GaN crystals by HVPE

RSC Advances ◽  
2014 ◽  
Vol 4 (66) ◽  
pp. 35106-35111 ◽  
Author(s):  
Yuanbin Dai ◽  
Yongzhong Wu ◽  
Lei Zhang ◽  
Yongliang Shao ◽  
Yuan Tian ◽  
...  
Keyword(s):  
Residual Stress ◽  
High Temperature ◽  
Defect Density ◽  
Annealing Process ◽  
High Temperature Annealing ◽  
Porous Substrate ◽  
High Quality

This manuscript describes a high temperature annealing process to prepare a porous substrate. The substrate was used for the growth of GaN by using HVPE method to provide reduced residual stress and low defect density.

Formation and Properties of Schottky Diodes on 4H-SiC after High Temperature Annealing with Graphite Encapsulation

2006 ◽  
Vol 527-529 ◽  
pp. 915-918 ◽  
Author(s):  
Y. Wang ◽  
M.K. Mikhov ◽  
B.J. Skromme
Keyword(s):  
High Temperature ◽  
Ideality Factor ◽  
Schottky Diodes ◽  
Extended Defects ◽  
High Temperature Annealing ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current Voltage ◽  
Encapsulation Method ◽  
The Impact

The impact of high temperature annealing using graphite encapsulation (formed by baking photoresist) on the electrical properties of Ni Schottky diodes formed on the annealed surfaces is studied. The surface morphology is also characterized by atomic force microscopy (AFM). Annealing for 10 minutes at temperatures up to 1800 °C with graphite encapsulation actually reduces the high-current ideality factor of the diodes while raising the current-voltage barrier height (linearly extrapolated to unity ideality factor) from 1.453 V to 1.67-1.73 V. Excess leakage current occurs only in a subset of diodes, which are believed to be affected by extended defects. The AFM images show no significant surface roughening, and the graphite can be removed after processing. This encapsulation method is found to be highly effective in preserving the electronic properties of the surface during high temperature annealing.

High Temperature Annealing SP-AlN Ameliorates the Crystal Quality ofAl0.5Ga0.5N Regrowth

2020 ◽  
Vol 1014 ◽  
pp. 14-21
Author(s):  
Wen Kai Yue ◽  
Zhi Min Li ◽  
Xiao Wei Zhou ◽  
Jin Xing Wu ◽  
Pei Xian Li
Keyword(s):  
Raman Spectroscopy ◽  
High Temperature ◽  
Annealing Process ◽  
High Temperature Annealing ◽  
High Quality ◽  
Rocking Curve ◽  
Stress Mode ◽  
Aln Film ◽  
Before And After ◽  
Screw Dislocation Density

In this study, the effect of a high-temperature annealing process on AlN is investigated. The high-temperature annealing process reduces the screw dislocation density of the AlN film to 2.1x107 cm-2. The AlN surface is highly flat. Through HRXRD and Raman spectroscopy, the stress mode changes in the sputtered AlN film before and after high-temperature annealing were studied in depth. Based on the HTA-AlN template, a high-quality, high-Al composition AlGaN epitaxial wafer, with a (0002) plane rocking curve FWHM of 246 arcsec , was prepared at 1080°C The growth mode of AlGaN grown directly on the AlN template at low temperature is summarized.

Influence of High Temperature Annealing in Nitrogen on Upconversion Luminescence of β-NaYF4: Yb3+, Er3+ Hexagonal Sub-Microplates

2012 ◽  
Vol 496 ◽  
pp. 79-83
Author(s):  
Jun Wei Zhao ◽  
Tie Kun Jia ◽  
Xiang Gui Kong
Keyword(s):  
High Temperature ◽  
Sodium Citrate ◽  
Hexagonal Phase ◽  
Upconversion Luminescence ◽  
Annealing Treatment ◽  
Annealing Process ◽  
High Temperature Annealing ◽  
Nonradiative Relaxation ◽  
Before And After ◽  
Hydrothermal Methods

The pure β-NaYF4: Yb3+, Er3+ hexagonal sub-microplates were successfully prepared by the combination of coprecipitation and hydrothermal methods using sodium citrate as chelator. The size of them is about 600 nm × 400 nm (side length × thickness). The obtained sample was divided into two parts and one of them was annealed in nitrogen at 300 °C for 2 hours. The crystal structure of the β-NaYF4: Yb3+, Er3+ hexagonal sub-microplates before and after annealing treatment is hexagonal phase. Under the excitation of 980 nm diode laser, the upconversion luminescence intensity the sample after annealing is much stronger than that of the sample without annealing treatment. High temperature annealing process improved the crystallization of the sample, resulting in the decrease of the nonradiative relaxation and the enhancement of the upconversion luminescence.

PREVENTION OF SINTERING DURING ANNEALING PROCESS OF FePt NANOPARTICLES COATED WITH ZnO SHELL

NANO ◽  
2012 ◽  
Vol 07 (06) ◽  
pp. 1250043 ◽  
Author(s):  
HOSSEIN ZEYNALI ◽  
HOSSEIN AKBARI ◽  
REYHANEH KARIMI GHASABEH ◽  
S. ARUMUGAM ◽  
ZOHREH CHAMANZADEH ◽  
...  
Keyword(s):  
High Temperature ◽  
Zno Nanoparticles ◽  
Annealing Process ◽  
Oxide Shell ◽  
Fept Nanoparticles ◽  
Ferromagnetic Behavior ◽  
High Temperature Annealing ◽  
Narrow Size Distribution ◽  
Annealing Temperatures ◽  
Co Reduction

Monodispersed 4.1 nm FePt nanoparticles with narrow size distribution were successfully synthesized by the chemical polyol process with co-reduction of Fe (acac)3 and Pt (acac)2 in the presence of 1,2-hexadecanediol as a reducing agent. To achieve hard ferromagnetic behavior with L10 phase and face center tetragonal (fct) structure, high temperature annealing is performed. Annealing causes the surfactant surrounding particles to decompose and agglomeration of particles occurs. In the present work, chemically synthesized FePt nanoparticles were coated with nonmagnetic ZnO oxide shell to prevent them from sintering. Coercivity of FePt and FePt/ZnO nanoparticles increases from 5 kOe to 10 kOe and 1.8 kOe to 6 kOe respectively, with the increasing annealing temperatures from 650 to 750°C.

Precipitates caused by prolonged high-temperature annealing in floating zone silicon wafer grown from Czochralski single-crystal rod

2013 ◽  
Vol 16 (3) ◽  
pp. 923-927 ◽  
Author(s):  
Haruo Nakazawa ◽  
Masaaki Ogino ◽  
Hideaki Teranishi ◽  
Yoshikazu Takahashi ◽  
Hitoshi Habuka
Keyword(s):  
High Temperature ◽  
Single Crystal ◽  
Silicon Wafer ◽  
High Temperature Annealing ◽  
Floating Zone
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