Two Different Mechanisms for Determining Effective Work Function (fm,eff) on High-k - Physical Understanding and Wider Tunability of fm,eff

2006 ◽  
Author(s):  
M. Kadoshima ◽  
A. Ogawa ◽  
H. Ota ◽  
M. Ikeda ◽  
M. Takahashi ◽  
...  
Keyword(s):  
Work Function ◽  
Effective Work ◽  
Effective Work Function ◽  
Physical Understanding ◽  
High K

Effective work-function control technique applicable to p-type FinFET high-k/metal gate devices

2017 ◽  
Vol 72 ◽  
pp. 80-84 ◽  
Author(s):  
Shimpei Yamaguchi ◽  
Zeynel Bayindir ◽  
Xiaoli He ◽  
Suresh Uppal ◽  
Purushothaman Srinivasan ◽  
...  
Keyword(s):  
Work Function ◽  
Control Technique ◽  
Metal Gate ◽  
Effective Work ◽  
Effective Work Function ◽  
High K ◽  
P Type

Enabling Effective Work Function Tuning by RF-PVD Metal Oxide on High-k Gate Dielectric

2019 ◽  
Vol 13 (1) ◽  
pp. 143-150 ◽  
Author(s):  
Naomi Yoshida ◽  
Xianmin Tang ◽  
Khaled Ahmed ◽  
Giuseppina Conti ◽  
Dave Liu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Work Function ◽  
Gate Dielectric ◽  
Effective Work ◽  
Effective Work Function ◽  
High K ◽  
Work Function Tuning ◽  
High K Gate Dielectric

Behavior of Effective Work Function in Metal/High-K Gate Stack under High Temperature Process

2004 ◽  
Author(s):  
Moon Sig Joo ◽  
Byung Jin Cho ◽  
D. Z. Chi ◽  
N. Balasubramanian ◽  
D.-L. Kwong
Keyword(s):  
High Temperature ◽  
Work Function ◽  
Gate Stack ◽  
Effective Work ◽  
Effective Work Function ◽  
High Temperature Process ◽  
High K

The effects of process condition of top-TiN and TaN thickness on the effective work function of MOSCAP with high-k/metal gate stacks

2014 ◽  
Vol 35 (10) ◽  
pp. 106002 ◽  
Author(s):  
Xueli Ma ◽  
Hong Yang ◽  
Wenwu Wang ◽  
Huaxiang Yin ◽  
Huilong Zhu ◽  
...  
Keyword(s):  
Work Function ◽  
Process Condition ◽  
Gate Stacks ◽  
Metal Gate ◽  
Effective Work ◽  
Effective Work Function ◽  
High K
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