A 90nm Phase Change Memory Technology for Stand-Alone Non-Volatile Memory Applications

2006 ◽  
Author(s):  
F. Pellizzer ◽  
A. Benvenuti ◽  
B. Gleixner ◽  
Y. Kim ◽  
B. Johnson ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications ◽  
Change Memory

scholarly journals Design of Non-Volatile Phase Change Memory for FPGA Architectures

2019 ◽  
Vol 8 (2) ◽  
pp. 2253-2257
Keyword(s):  
Phase Change ◽  
Flash Memory ◽  
Phase Change Memory ◽  
Test Environment ◽  
Memory Circuit ◽  
Fpga Architecture ◽  
Memory Circuits ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Change Memory

Phase change memory circuit has been designed to function as Non-Volatile memory circuit using 45nm and 90nm technology. The other non-volatile memory circuits like Flash and MTJ-MRAM are realized in 45nm and 90nm CMOS Technology in which their output behavioral characteristics, power and delay parameters are obtained in order to compare with performance of MTJ-MRAM and Flash memory circuits. The design has been carried out using Cadence Virtuoso – Electronic Design Automation (EDA) Software tool in Analog Design Environment (ADE), the advanced design and simulation is performed in virtuoso platform. The schematic for PCM is designed and simulations are carried out in 45nm and 90nm technology using a test environment. Further the work has been extended to design memory circuit that gives non-volatility which can be implemented for FPGA architecture. Existing FPGA architectures which are non-volatile based, have limitations and demands for a better computing memory to be integrated within. The present work brings out a novel Phase Change Memory design with better performance than existing flash based and anti-fuse based types of FPGAs and also better than MTJ-MRAM attributes. The present work compares attributes like power dissipation and delay of PCM with other non volatile memories used for FPGA architecture. Further PCM techniques indicate significant power and delay reduction when compared to MTJ-MRAM and flash memory circuit.

scholarly journals Scalability of Phase Change Materials in Nanostructure Template

2015 ◽  
Vol 2015 ◽  
pp. 1-4
Author(s):  
Wei Zhang ◽  
Biyun L. Jackson ◽  
Ke Sun ◽  
Jae Young Lee ◽  
Shyh-Jer Huang ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Materials ◽  
Scaling Limit ◽  
Phase Change Memory ◽  
Leakage Power ◽  
Memory Element ◽  
Transmission Electron ◽  
Diffraction Mode ◽  
Memory Applications ◽  
Change Memory

The scalability of In2Se3, one of the phase change materials, is investigated. By depositing the material onto a nanopatterned substrate, individual In2Se3nanoclusters are confined in the nanosize pits with well-defined shape and dimension permitting the systematic study of the ultimate scaling limit of its use as a phase change memory element. In2Se3of progressively smaller volume is heated inside a transmission electron microscope operating in diffraction mode. The volume at which the amorphous-crystalline transition can no longer be observed is taken as the ultimate scaling limit, which is approximately 5 nm3for In2Se3. The physics for the existence of scaling limit is discussed. Using phase change memory elements in memory hierarchy is believed to reduce its energy consumption because they consume zero leakage power in memory cells. Therefore, the phase change memory applications are of great importance in terms of energy saving.

Surface Oxidation phenomena in Ge-rich GeSbTe alloys and N doping influence for Phase-Change Memory applications

2021 ◽  
pp. 151514
Author(s):  
Ludovic Goffart ◽  
Bernard Pelissier ◽  
Gauthier Lefèvre ◽  
Yannick Le–Friec ◽  
Christophe Vallée ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Surface Oxidation ◽  
N Doping ◽  
Memory Applications ◽  
Change Memory
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