Single-poly bipolar transistor with selective epitaxial silicon and chemo-mechanical polishing

2003 ◽  
Author(s):  
C.T. Nguyen ◽  
S.C. Kuehne ◽  
S.S. Wong
Keyword(s):  
Bipolar Transistor ◽  
Mechanical Polishing ◽  
Epitaxial Silicon

Application of selective epitaxial silicon and chemo-mechanical polishing to bipolar transistors

1994 ◽  
Vol 41 (12) ◽  
pp. 2343-2350 ◽  
Author(s):  
C.T. Nguyen ◽  
S.C. Kuehne ◽  
S.S. Wong ◽  
L.K. Garling ◽  
C. Drowley
Keyword(s):  
Bipolar Transistors ◽  
Mechanical Polishing ◽  
Epitaxial Silicon

MICROWAVE POWER GaAs/AlGaAs HETEROJUNCTION BIPOLAR TRANSISTOR MODELLING

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-579-C4-582
Author(s):  
J. G. METCALFE ◽  
R. C. HAYES ◽  
A. J. HOLDEN ◽  
A. P. LONG
Keyword(s):  
Microwave Power ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor

Fine MCP Decapsulation Technology Development

2006 ◽  
Author(s):  
Jianwei Zhou ◽  
Wei Zheng ◽  
Taekoo Lee
Keyword(s):  
Chemical Etching ◽  
Etch Rate ◽  
Technology Development ◽  
New Technology ◽  
Ammonium Hydroxide ◽  
Mechanical Polishing ◽  
Technology Process ◽  
Tetra Methyl Ammonium Hydroxide ◽  
Die Surface

Abstract Multi-Chip Package (MCP) decapsulation is now becoming a rising problem. Because for traditional decapsulation method, acid can’t dissolve the top silicon die to expose the bottom die surface in MCP. It makes inspecting the bottom die in MCP is difficult. In this paper, a new MCP decapsulation technology combining mechanical polishing with chemical etching is introduced. This new technology can remove the top die quickly without damaging the bottom die using KOH and Tetra-Methyl Ammonium Hydroxide (TMAH). The technology process and relative application are presented. The factors that affect the KOH and TMAH etch rate are studied. The usage difference between the two etchant is discussed.

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