An optimizedinsituargon sputter cleaning process for device quality low‐temperature (T≤800 °C) epitaxial silicon: Bipolar transistor andpnjunction characterization

W. R. Burger; R. Reif

doi:10.1063/1.339099

An optimizedinsituargon sputter cleaning process for device quality low‐temperature (T≤800 °C) epitaxial silicon: Bipolar transistor andpnjunction characterization

Journal of Applied Physics ◽

10.1063/1.339099 ◽

1987 ◽

Vol 62 (10) ◽

pp. 4255-4268 ◽

Cited By ~ 40

Author(s):

W. R. Burger ◽

R. Reif

Keyword(s):

Low Temperature ◽

Bipolar Transistor ◽

Cleaning Process ◽

Epitaxial Silicon

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An optimized in situ argon sputter cleaning process for device quality low-temperature (T ⩽ 800°C) epitaxial silicon: bipolar transistor and pn junction characterization

Vacuum ◽

10.1016/0042-207x(89)90334-5 ◽

1989 ◽

Vol 39 (5) ◽

pp. 496

Keyword(s):

Low Temperature ◽

Bipolar Transistor ◽

Cleaning Process ◽

Epitaxial Silicon ◽

Pn Junction

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Bipolar transistor fabrication in low-temperature (745°C) ultra-low-pressure chemical-vapor-deposited epitaxial silicon

IEEE Electron Device Letters ◽

10.1109/edl.1987.26590 ◽

1987 ◽

Vol 8 (4) ◽

pp. 168-170 ◽

Cited By ~ 18

Author(s):

W.R. Burger ◽

J.H. Comfort ◽

L.M. Garverick ◽

T.R. Yew ◽

R. Reif

Keyword(s):

Low Temperature ◽

Chemical Vapor ◽

Low Pressure ◽

Bipolar Transistor ◽

Epitaxial Silicon ◽

Chemical Vapor Deposited ◽

Pressure Chemical ◽

Transistor Fabrication

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Single-poly bipolar transistor with selective epitaxial silicon and chemo-mechanical polishing

1992 Symposium on VLSI Technology Digest of Technical Papers ◽

10.1109/vlsit.1992.200645 ◽

2003 ◽

Cited By ~ 2

Author(s):

C.T. Nguyen ◽

S.C. Kuehne ◽

S.S. Wong

Keyword(s):

Bipolar Transistor ◽

Mechanical Polishing ◽

Epitaxial Silicon

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High phosphorus doping of epitaxial silicon at low temperature and atmospheric pressure

Applied Physics Letters ◽

10.1063/1.105066 ◽

1991 ◽

Vol 58 (17) ◽

pp. 1896-1898 ◽

Cited By ~ 22

Author(s):

T. O. Sedgwick ◽

P. D. Agnello ◽

D. Nguyen Ngoc ◽

T. S. Kuan ◽

G. Scilla

Keyword(s):

Low Temperature ◽

Atmospheric Pressure ◽

Epitaxial Silicon ◽

Phosphorus Doping ◽

High Phosphorus

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Silicon Heterojunction Solar Cell: A New Buffer Layer Concept With Low-Temperature Epitaxial Silicon

IEEE Transactions on Electron Devices ◽

10.1109/ted.2004.836801 ◽

2004 ◽

Vol 51 (11) ◽

pp. 1818-1824 ◽

Cited By ~ 22

Author(s):

E. Centurioni ◽

D. Iencinella ◽

R. Rizzoli ◽

F. Zignani

Keyword(s):

Solar Cell ◽

Low Temperature ◽

Buffer Layer ◽

Heterojunction Solar Cell ◽

Epitaxial Silicon ◽

Silicon Heterojunction Solar Cell ◽

Layer Concept

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Modeling and Simulation of Bipolar Transistor at Low Temperature

10.15760/etd.6498 ◽

2000 ◽

Author(s):

Swarupa Nerurkar

Keyword(s):

Low Temperature ◽

Modeling And Simulation ◽

Bipolar Transistor

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High-rate deposition of epitaxial layers for efficient low-temperature thin film epitaxial silicon solar cells

Progress in Photovoltaics Research and Applications ◽

10.1002/pip.385 ◽

2001 ◽

Vol 9 (5) ◽

pp. 333-340 ◽

Cited By ~ 10

Author(s):

Lars Oberbeck ◽

Jan Schmidt ◽

Thomas A. Wagner ◽

Ralf B. Bergmann

Keyword(s):

Thin Film ◽

Solar Cells ◽

Low Temperature ◽

High Rate ◽

Silicon Solar Cells ◽

Epitaxial Layers ◽

Epitaxial Silicon

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Cross-sectional TEM characterization of low temperature (750-800°C) epitaxial silicon by very low pressure (6 mTorr) chemical vapor deposition with and without plasma enhancement

Journal of Electronic Materials ◽

10.1007/bf02652144 ◽

1988 ◽

Vol 17 (2) ◽

pp. 139-148 ◽

Cited By ~ 4

Author(s):

T. R. Yew ◽

J. H. Comfort ◽

L. M. Garverick ◽

W. R. Burger ◽

R. Reif

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Epitaxial Silicon ◽

Cross Sectional ◽

Tem Characterization ◽

Plasma Enhancement

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A low donor concentration retrograde profile Si bipolar transistor for low-temperature BiCMOS LSI's

Proceedings of 1994 VLSI Technology Symposium ◽

10.1109/vlsit.1994.324408 ◽

2002 ◽

Author(s):

K. Imai ◽

Y. Kinoshita ◽

T. Yamazaki ◽

T. Tatsumi ◽

T. Tashiro

Keyword(s):

Low Temperature ◽

Bipolar Transistor ◽

Donor Concentration

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Crystalline silicon solar cells with doped epitaxial silicon films obtained at low-temperature by PECVD

2010 35th IEEE Photovoltaic Specialists Conference ◽

10.1109/pvsc.2010.5614370 ◽

2010 ◽

Author(s):

J. Damon-Lacoste ◽

M. Labrune ◽

S. Granata ◽

D. Daineka ◽

P. Roca i Cabarrocas

Keyword(s):

Solar Cells ◽

Low Temperature ◽

Crystalline Silicon ◽

Silicon Films ◽

Silicon Solar Cells ◽

Epitaxial Silicon ◽

Crystalline Silicon Solar Cells

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