scholarly journals Single Event Upsets Induced by Direct Ionization from Low-Energy Protons in Floating Gate Cells

2017 ◽  
Vol 64 (1) ◽  
pp. 464-470 ◽  
Author(s):  
Marta Bagatin ◽  
Simone Gerardin ◽  
Alessandro Paccagnella ◽  
Angelo Visconti ◽  
Ari Virtanen ◽  
...  
Keyword(s):  
Low Energy ◽  
Floating Gate ◽  
Single Event ◽  
Direct Ionization ◽  
Single Event Upsets

Recoil-Ion-Induced Single Event Upsets in Nanometer CMOS SRAM Under Low-Energy Proton Radiation

2017 ◽  
Vol 64 (1) ◽  
pp. 654-664 ◽  
Author(s):  
Zhenyu Wu ◽  
Shuming Chen ◽  
Junting Yu ◽  
Jianjun Chen ◽  
Pengcheng Huang ◽  
...  
Keyword(s):  
Low Energy ◽  
Proton Radiation ◽  
Single Event ◽  
Nanometer Cmos ◽  
Single Event Upsets ◽  
Energy Proton

scholarly journals Single event upsets sensitivity of low energy proton in nanometer static random access memory

2016 ◽  
Vol 65 (6) ◽  
pp. 068501
Author(s):  
Luo Yin-Hong ◽  
Zhang Feng-Qi ◽  
Wang Yan-Ping ◽  
Wang Yuan-Ming ◽  
Guo Xiao-Qiang ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Low Energy ◽  
Static Random Access Memory ◽  
Single Event ◽  
Access Memory ◽  
Single Event Upsets ◽  
Energy Proton

Dependence of single event upsets sensitivity of low energy proton on test factors in 65 nm SRAM

2018 ◽  
Vol 27 (7) ◽  
pp. 078501 ◽  
Author(s):  
Yin-Yong Luo ◽  
Feng-Qi Zhang ◽  
Xiao-Yu Pan ◽  
Hong-Xia Guo ◽  
Yuan-Ming Wang
Keyword(s):  
Low Energy ◽  
Single Event ◽  
Single Event Upsets ◽  
Energy Proton

Impact of Total Ionizing Dose on Low Energy Proton Single Event Upsets in Nanometer SRAM

2019 ◽  
Vol 66 (7) ◽  
pp. 1848-1853
Author(s):  
Yinhong Luo ◽  
Fengqi Zhang ◽  
Xiaoyu Pan ◽  
Hongxia Guo ◽  
Yuanming Wang
Keyword(s):  
Low Energy ◽  
Single Event ◽  
Total Ionizing Dose ◽  
Single Event Upsets ◽  
Energy Proton

Low-Energy Proton-Induced Single-Event-Upsets in 65 nm Node, Silicon-on-Insulator, Latches and Memory Cells

2007 ◽  
Vol 54 (6) ◽  
pp. 2474-2479 ◽  
Author(s):  
Kenneth P. Rodbell ◽  
David F. Heidel ◽  
Henry H. K. Tang ◽  
Michael S. Gordon ◽  
Phil Oldiges ◽  
...  
Keyword(s):  
Low Energy ◽  
Silicon On Insulator ◽  
Memory Cells ◽  
Single Event ◽  
Single Event Upsets ◽  
Energy Proton

Impact of the Elemental Makeup of an IC in Generating Single-Event Upsets From Low-Energy (<10 MeV) Neutrons: A 3-D nand Flash Case Study

2019 ◽  
Vol 66 (1) ◽  
pp. 466-473
Author(s):  
Peter M. Conway ◽  
Matthew J. Gadlage ◽  
James D. Ingalls ◽  
Aaron M. Williams ◽  
David I. Bruce ◽  
...  
Keyword(s):  
Low Energy ◽  
Nand Flash ◽  
Single Event ◽  
Single Event Upsets

scholarly journals The Effect of Energy Loss Straggling on SEUs Induced by Low-Energy Protons in 28 nm FDSOI SRAMs

2019 ◽  
Vol 9 (17) ◽  
pp. 3475
Author(s):  
Lujie Zhang ◽  
Jingyan Xu ◽  
Yaqing Chi ◽  
Yang Guo
Keyword(s):  
Energy Loss ◽  
Random Access ◽  
Low Energy ◽  
Silicon On Insulator ◽  
Sensitive Volume ◽  
Access Memory ◽  
Fully Depleted ◽  
Direct Ionization ◽  
Single Event Upsets ◽  
28 Nm

Sensitive volume thickness for silicon on insulator (SOI) devices has scaled to the point that energy loss straggling cannot be ignored within the development of the manufacturing process. In this study, irradiation experiments and Geant4 simulation were carried out to explore the influence of energy loss straggling on single event upsets (SEUs) caused by sub-8 MeV proton direct ionization. We took a 28 nm fully-depleted SOI static random-access memory (SRAM) as the research target. According to our results, the depositing energy spectrum formed by monoenergetic low-energy protons that penetrated through the sensitive volume of the target SRAM was extremely broadened. We concluded that the SEUs we observed in this article were attributed to energy loss straggling. Therefore, it is sensible to take the new mechanism into consideration when predicting proton-induced SEUs for modern nanometer SOI circuits, instead of the traditional linear energy transfer (LET) method.

Sign in / Sign up

Export Citation Format

Share Document