Correction to "A CMOS Readout Circuit for Silicon Drift Detectors With on-Clip JFET and Feedback Capacitor"

2006 ◽  
Vol 53 (5) ◽  
pp. 3060-3060
Author(s):  
C. Fiorini ◽  
T. Frizzi ◽  
A. Longoni ◽  
M. Porro
Keyword(s):  
Readout Circuit ◽  
Feedback Capacitor ◽  
Silicon Drift Detectors

A CMOS Readout Circuit for Silicon Drift Detectors With on-Clip JFET and Feedback Capacitor

2006 ◽  
Vol 53 (4) ◽  
pp. 2196-2203 ◽  
Author(s):  
C. Fiorini ◽  
T. Frizzi ◽  
A. Longoni ◽  
M. Porro
Keyword(s):  
Readout Circuit ◽  
Feedback Capacitor ◽  
Silicon Drift Detectors

A Multichannel Integrated Readout Circuit for High Throughput X-Ray Spectroscopy With Silicon Drift Detectors

2013 ◽  
Vol 60 (1) ◽  
pp. 430-436 ◽  
Author(s):  
L. Bombelli ◽  
R. Quaglia ◽  
C. Fiorini ◽  
R. Alberti ◽  
T. Frizzi
Keyword(s):  
High Throughput ◽  
Readout Circuit ◽  
X Ray ◽  
Silicon Drift Detectors

Low Power Pixel-Level ADC Readout Circuit for an Amorphous Silicon-Based Microbolometer

2009 ◽  
Vol E92-C (5) ◽  
pp. 708-712
Author(s):  
Dong-Heon HA ◽  
Chi Ho HWANG ◽  
Yong Soo LEE ◽  
Hee Chul LEE
Keyword(s):  
Low Power ◽  
Amorphous Silicon ◽  
Readout Circuit ◽  
Silicon Based

CMOS readout circuit allowing microbolometer arrays to operate without temperature stabilisation

2004 ◽  
Vol 40 (23) ◽  
pp. 1459 ◽  
Author(s):  
S.G. Kang ◽  
Y.S. Lee ◽  
H.C. Lee
Keyword(s):  
Readout Circuit

scholarly journals Integrating Resonator to Enhance Magnetometer Microelectromechanical System Implementation with ASIC Compatible CMOS 0.18 μm Process

Micromachines ◽  
2021 ◽  
Vol 12 (6) ◽  
pp. 635
Author(s):  
Chih-Hsuan Lin ◽  
Chao-Hung Song ◽  
Kuei-Ann Wen
Keyword(s):  
Resonant Frequency ◽  
Tuning Range ◽  
Dynamic Range ◽  
Ambient Pressure ◽  
Readout Circuit ◽  
Microelectromechanical System ◽  
Correlated Double Sampling ◽  
Driving Current ◽  
Mems Oscillator ◽  
Oscillation Characteristics

In this study, a multi-function microelectromechanical system (MEMS) was integrated with a MEMS oscillator, using the resonant frequency oscillation characteristics of the oscillator to provide the Lorentz current of the magnetometer to enhance a large dynamic range of reading, which eliminates the off-chip clock and current generator. The resonant frequency can be adjusted by adjusting the bias voltage of the oscillator to further adjust the sensitivity of the magnetometer. With the mechanical Q value characteristic, a great dynamic range can be achieved. In addition, using the readout circuit of the nested chopper and correlated double-sampling (CDS) to reduce the noise and achieve a smaller resolution, the calibration circuit compensates for errors caused by the manufacturing process. The frequency of the tuning range of the proposed structure is 17,720–19,924 Hz, and the tuning range of the measurement result is 110,620.36 ppm. The sensitivities of the x-, y-, and z-axes of the magnetometer with driving current of 2 mA are 218.3, 74.33, and 7.5 μV/μT for ambient pressure of 760 torr. The resolutions of the x-, y-, and z-axes of the magnetometer with driving current of 2 mA are 3.302, 9.69, and 96 nT/√Hz for ambient pressure of 760 torr.

scholarly journals 60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes

Sensors ◽  
2021 ◽  
Vol 21 (3) ◽  
pp. 942
Author(s):  
Razvan Pascu ◽  
Gheorghe Pristavu ◽  
Gheorghe Brezeanu ◽  
Florin Draghici ◽  
Philippe Godignon ◽  
...  
Keyword(s):  
Low Cost ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
High Sensitivity ◽  
Xrd Analysis ◽  
Absolute Temperature ◽  
Lower Sensitivity ◽  
Readout Circuit ◽  
Sensing Element ◽  
High Performing

A SiC Schottky dual-diode temperature-sensing element, suitable for both complementary variation of VF with absolute temperature (CTAT) and differential proportional to absolute temperature (PTAT) sensors, is demonstrated over 60–700 K, currently the widest range reported. The structure’s layout places the two identical diodes in close, symmetrical proximity. A stable and high-barrier Schottky contact based on Ni, annealed at 750 °C, is used. XRD analysis evinced the even distribution of Ni2Si over the entire Schottky contact area. Forward measurements in the 60–700 K range indicate nearly identical characteristics for the dual-diodes, with only minor inhomogeneity. Our parallel diode (p-diode) model is used to parameterize experimental curves and evaluate sensing performances over this far-reaching domain. High sensitivity, upwards of 2.32 mV/K, is obtained, with satisfactory linearity (R2 reaching 99.80%) for the CTAT sensor, even down to 60 K. The PTAT differential version boasts increased linearity, up to 99.95%. The lower sensitivity is, in this case, compensated by using a high-performing, low-cost readout circuit, leading to a peak 14.91 mV/K, without influencing linearity.

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