Thin CVD diamond detectors with high charge collection efficiency

2002 ◽  
Vol 49 (1) ◽  
pp. 277-280 ◽  
Author(s):  
A. Brambilla ◽  
D. Tromson ◽  
P. Bergonzo ◽  
C. Mer ◽  
F. Foulon
Keyword(s):  
Collection Efficiency ◽  
Cvd Diamond ◽  
Charge Collection ◽  
Charge Collection Efficiency ◽  
High Charge

scholarly journals Low Voltage High-Energy α-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency

Sensors ◽  
2019 ◽  
Vol 19 (23) ◽  
pp. 5107 ◽  
Author(s):  
Sandupatla ◽  
Arulkumaran ◽  
Ranjan ◽  
Ing ◽  
Murmu ◽  
...  
Keyword(s):  
Low Voltage ◽  
Collection Efficiency ◽  
Schottky Diodes ◽  
High Energy ◽  
Charge Collection ◽  
Charge Carrier Density ◽  
Free Standing ◽  
Charge Collection Efficiency ◽  
High Charge ◽  
Drift Layer

A low voltage (–20 V) operating high-energy (5.48 MeV) α-particle detector with a high charge collection efficiency (CCE) of approximately 65% was observed from the compensated (7.7 × 1014 /cm3) metalorganic vapor phase epitaxy (MOVPE) grown 15 µm thick drift layer gallium nitride (GaN) Schottky diodes on free-standing n+-GaN substrate. The observed CCE was 30% higher than the bulk GaN (400 µm)-based Schottky barrier diodes (SBD) at –20 V. This is the first report of α–particle detection at 5.48 MeV with a high CCE at –20 V operation. In addition, the detectors also exhibited a three-times smaller variation in CCE (0.12 %/V) with a change in bias conditions from –120 V to –20 V. The dramatic reduction in CCE variation with voltage and improved CCE was a result of the reduced charge carrier density (CCD) due to the compensation by Mg in the grown drift layer (DL), which resulted in the increased depletion width (DW) of the fabricated GaN SBDs. The SBDs also reached a CCE of approximately 96.7% at –300 V.

About Homogeneity of CVD Diamond Nuclear Particles Detectors

1995 ◽  
Vol 416 ◽  
Author(s):  
C. Manfredotti ◽  
F. Fizzotti ◽  
P. Polesello ◽  
E. Vittone ◽  
M. Jaksic ◽  
...  
Keyword(s):  
Collection Efficiency ◽  
Diamond Films ◽  
Morphological Structure ◽  
Cvd Diamond ◽  
Optical Microscope ◽  
Columnar Structure ◽  
Charge Collection ◽  
Charge Collection Efficiency ◽  
Large Charge

ABSTRACTCVD diamond films show both at optical microscope and at SEM a quasi-columnar structure, not homogeneously distributed in the bulk which is agreed to be responsible for the relatively large charge collection lengths measured in the material. In this work, we present the first data on charge collection efficiency distributions as measured directly in the bulk by a 3 Meν proton microbeam. The results indicate that the material is really non-homogeneous, that only few columns are really connecting both electrodes and that, finally, a real connection exists between the morphological structure and the maps of collection efficiency distribution.

Near full light absorption and full charge collection in 1-micron thick quantum dot photodetector using intercalated graphene monolayer electrodes

Nanoscale ◽  
2020 ◽  
Vol 12 (8) ◽  
pp. 4909-4915 ◽  
Author(s):  
Wenjun Chen ◽  
Seungbae Ahn ◽  
Marquez Balingit ◽  
Jiaying Wang ◽  
Malcolm Lockett ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Absorption ◽  
Collection Efficiency ◽  
Charge Collection ◽  
Graphene Monolayer ◽  
Charge Collection Efficiency ◽  
High Charge ◽  
Full Charge

High charge collection efficiency in Vis and NIR using intercalated QD/Gr systems.

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