Charge-collection efficiency of single-crystal CVD diamond detector for low-energy charged particles with energies ranging from 100 keV to 2 MeV

Author(s):  
Yuki Sato ◽  
Hiroyuki Murakami ◽  
Takehiro Shimaoka ◽  
Masakatsu Tsubota ◽  
Junichi H. Kaneko
2013 ◽  
Vol 104 (2) ◽  
pp. 22003 ◽  
Author(s):  
Y. Sato ◽  
T. Shimaoka ◽  
J. H. Kaneko ◽  
H. Murakami ◽  
D. Miyazaki ◽  
...  

2005 ◽  
Vol 20 (38) ◽  
pp. 2949-2956
Author(s):  
QINGFENG SU ◽  
YIBEN XIA ◽  
LINJUN WANG ◽  
JIANMIN LIU ◽  
JIANFENG RUAN ◽  
...  

The outstanding properties of diamond make it an ideal material for radiation detectors especially in the high temperature, high radiation and corrosion environments. For this purpose, electrical and irradiation properties of high quality CVD diamond detector were investigated at room temperature under irradiation conditions. For freestanding diamond films, dark current was in the order of 10-10 A and photocurrent was in the order of 10-8 A by 5.9 keV X-ray irradiation from a 55 Fe source with the applied voltage of 40 V. Pulse height spectrum acquired using a 241 Am alpha particle source show a full-energy peak at 820 channel which corresponded to an average charge collection efficiency of approximately 40.5%. However, a good signal-to-noise ratio and an energy resolution of 1.33% for alpha particles detecting were also obtained.


2021 ◽  
Vol 23 (2) ◽  
pp. 68-75
Author(s):  
Altukhov A.A. ◽  

The results of experiments on the study of polarization phenomena and the charge collection efficiency in test structures of diamond ionizing radiation detectors using diamond plates of various types, including single-crystal NRNT-type, single-crystal CVD-type, as well as polycrystalline type, when exposed to alpha-radiation with an energy of 5.5 MeV are presented. Studies have demonstrated the existence of a number of problems with the device quality of diamond plates that affect the performance of spec-trometric-type detectors.


2014 ◽  
Vol 106 (2) ◽  
pp. 22001
Author(s):  
Y. Sato ◽  
T. Shimaoka ◽  
J. H. Kaneko ◽  
H. Murakami ◽  
D. Miyazaki ◽  
...  

2010 ◽  
Vol 645-648 ◽  
pp. 921-924 ◽  
Author(s):  
Naoya Iwamoto ◽  
Shinobu Onoda ◽  
Takeshi Ohshima ◽  
Kazutoshi Kojima ◽  
Atsushi Koizumi ◽  
...  

The effect of electron irradiation on the charge collection efficiency of a 6H-SiC p+n diode has been studied. The diodes were irradiated with electrons of energies from 100 keV to 1 MeV. The charge collection efficiencies of the samples were measured for alpha particles before and after the electron irradiation. The electron irradiation at 100 keV does not affect the charge collection efficiency, while the electron irradiation at 200 keV or higher decreases the charge collection efficiency. The degree of the degradation of the diodes correlates with the energy of the electron irradiation.


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