A Scalable Small-Signal and Noise Model for High-Electron-Mobility Transistors Working Down to Cryogenic Temperatures

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/tmtt.2021.3123647 ◽

2021 ◽

pp. 1-1

Author(s):

Felix Heinz ◽

Fabian Thome ◽

Dirk Schwantuschke ◽

Arnulf Leuther ◽

Oliver Ambacher

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Noise Model ◽

High Electron ◽

Small Signal ◽

Cryogenic Temperatures ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Improved small‐signal hybrid parameter‐extraction technique for AlGaN / GaN high electron mobility transistors

International Journal of RF and Microwave Computer-Aided Engineering ◽

10.1002/mmce.22562 ◽

2021 ◽

Author(s):

Xuekun Du ◽

Mohamed Helaoui ◽

Jialin Cai ◽

Jun Liu ◽

Fadhel M. Ghannouchi

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Parameter Extraction ◽

Extraction Technique ◽

High Electron ◽

Small Signal ◽

High Electron Mobility ◽

Electron Mobility Transistors

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A DC and small signal model for high electron mobility transistors

[1993] Proceedings of the Tenth Biennial University/Government/Industry Microelectronics Symposium ◽

10.1109/ugim.1993.297017 ◽

2002 ◽

Author(s):

H. Ahn ◽

M. El Nokali

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Small Signal ◽

Signal Model ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Small Signal Model

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High-frequency small-signal and large-signal characteristics of resonant tunneling high electron mobility transistors (RTHEMTs)

IEEE Transactions on Electron Devices ◽

10.1109/16.641380 ◽

1997 ◽

Vol 44 (11) ◽

pp. 2038-2040 ◽

Cited By ~ 2

Author(s):

K.J. Chen ◽

K. Maezawa ◽

M. Yamamoto

Keyword(s):

Electron Mobility ◽

High Frequency ◽

Resonant Tunneling ◽

High Electron Mobility Transistors ◽

High Electron ◽

Small Signal ◽

Large Signal ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Signal Characteristics

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Analytical noise model with the influence of shot noise induced by the gate leakage current for submicrometer gate-length high-electron-mobility transistors

IEEE Transactions on Electron Devices ◽

10.1109/16.641356 ◽

1997 ◽

Vol 44 (11) ◽

pp. 1883-1887 ◽

Cited By ~ 11

Author(s):

Doo-Sik Shin ◽

J.B. Lee ◽

Hong Shick Min ◽

Jae-Eung Oh ◽

Young June Park ◽

...

Keyword(s):

Leakage Current ◽

Shot Noise ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Noise Model ◽

Gate Length ◽

High Electron ◽

Gate Leakage Current ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Device Modeling of High Electron Mobility Transistors: Small Signal and Noise Modeling

Journal of Computational and Theoretical Nanoscience ◽

10.1166/jctn.2015.4236 ◽

2015 ◽

Vol 12 (10) ◽

pp. 3547-3555 ◽

Cited By ~ 1

Author(s):

Li Shen ◽

Bo Chen ◽

Ling Sun ◽

Jianjun Gao

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Device Modeling ◽

High Electron ◽

Small Signal ◽

High Electron Mobility ◽

Noise Modeling ◽

Electron Mobility Transistors

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The small-signal parameters and noise characterization for inverted GaAs/AlGaAs high electron mobility transistors

2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) ◽

10.1109/icmel.2000.840541 ◽

2002 ◽

Author(s):

Kuo-Wei Liu ◽

A.F.M. Anwar

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Small Signal ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Signal Parameters ◽

Noise Characterization

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Small-Signal Analysis of High Maximum Frequency of Oscillation 0.1-µm Off-Set Gamma-Shaped Gate InGaAs/InAlAs/GaAs Metamorphic High-Electron-Mobility Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.1914 ◽

2004 ◽

Vol 43 (4B) ◽

pp. 1914-1918 ◽

Cited By ~ 18

Author(s):

Bok-Hyung Lee ◽

Sam-Dong Kim ◽

Jin-Koo Rhee

Keyword(s):

Electron Mobility ◽

Signal Analysis ◽

High Electron Mobility Transistors ◽

High Electron ◽

Small Signal ◽

Maximum Frequency ◽

High Electron Mobility ◽

Small Signal Analysis ◽

Electron Mobility Transistors ◽

High Maximum

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An analytical model of small-signal parameters for GaAs/AlGaAs inverted high electron mobility transistors

Microelectronics Journal ◽

10.1016/s0026-2692(00)00110-5 ◽

2001 ◽

Vol 32 (1) ◽

pp. 85-88 ◽

Cited By ~ 1

Author(s):

K.-W. Liu ◽

A.F.M. Anwar

Keyword(s):

Analytical Model ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Small Signal ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Signal Parameters

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Small-Signal Microwave Performance Comparison of Deep Submicron AlGaN/GaN High Electron Mobility Transistors on High-Resistivity Silicon and Insulating Substrates

Applied Physics Express ◽

10.1143/apex.2.111002 ◽

2009 ◽

Vol 2 (11) ◽

pp. 111002 ◽

Cited By ~ 7

Author(s):

Haifeng Sun ◽

Andreas R. Alt ◽

Diego Marti ◽

Mathias Vetter ◽

Hansruedi Benedickter ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Deep Submicron ◽

Performance Comparison ◽

High Resistivity ◽

High Electron ◽

Small Signal ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

High Resistivity Silicon

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Small-signal modeling with direct parameter extraction for impact ionization effect in high-electron-mobility transistors

Journal of Applied Physics ◽

10.1063/1.4935542 ◽

2015 ◽

Vol 118 (19) ◽

pp. 195702 ◽

Cited By ~ 5

Author(s):

He Guan ◽

Hongliang Lv ◽

Hui Guo ◽

Yuming Zhang

Keyword(s):

Electron Mobility ◽

Impact Ionization ◽

High Electron Mobility Transistors ◽

Parameter Extraction ◽

High Electron ◽

Small Signal ◽

Signal Modeling ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Small Signal Modeling

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