Small-signal modeling with direct parameter extraction for impact ionization effect in high-electron-mobility transistors

2015 ◽  
Vol 118 (19) ◽  
pp. 195702 ◽  
Author(s):  
He Guan ◽  
Hongliang Lv ◽  
Hui Guo ◽  
Yuming Zhang
Keyword(s):  
Electron Mobility ◽  
Impact Ionization ◽  
High Electron Mobility Transistors ◽  
Parameter Extraction ◽  
High Electron ◽  
Small Signal ◽  
Signal Modeling ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Small Signal Modeling

Impact ionization in N-polar AlGaN/GaN high electron mobility transistors

2014 ◽  
Vol 105 (6) ◽  
pp. 063506 ◽  
Author(s):  
N. Killat ◽  
M. J. Uren ◽  
S. Keller ◽  
S. Kolluri ◽  
U. K. Mishra ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Impact Ionization ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

AlGaN/GaN High Electron Mobility Transistors on Si/SiO2/poly-SiC Substrates

2006 ◽  
Vol 955 ◽  
Author(s):  
Travis Anderson ◽  
Fan Ren ◽  
Lars Voss ◽  
Mark Hlad ◽  
Brent P Gila ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Parameter Extraction ◽  
High Electron ◽  
High Electron Mobility ◽  
Drain Spacing ◽  
Electron Mobility Transistors ◽  
Algan Barrier ◽  
Rf Performance ◽  
Spacing Parameter

ABSTRACTThe dc and rf performance of AlGaN/GaN High Electron Mobility Transistors (HEMTs) grown by Molecular Beam Epitaxy on Si-on-poly (SopSiC) substrates is reported. The HEMT structure incorporated a 7 period GaN/AlN superlattice between the AlGaN barrier and GaN channel for improved carrier confinement. The knee voltage of devices with 2 μm gate-drain spacing was 2.12 V and increased to 3 V at 8 μm spacing. The maximum frequency of oscillation, fMAX, was ∼40 GHz for devices with 0.5 μm gate length and 2 μm gate-drain spacing. Parameter extraction from the measured rf characteristics showed a maximum intrinsic transconductance of 143 mS.mm−1.

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