Design of 60-GHz Low-Noise Amplifiers With Low NF and Robust ESD Protection in 65-nm CMOS

2013 ◽  
Vol 61 (1) ◽  
pp. 553-561 ◽  
Author(s):  
Ming-Hsien Tsai ◽  
Shawn S. H. Hsu ◽  
Fu-Lung Hsueh ◽  
Chewn-Pu Jou ◽  
Tzu-Jin Yeh
Keyword(s):  
Low Noise ◽  
Low Noise Amplifiers ◽  
60 Ghz ◽  
Esd Protection

Comparison of coplanar 60-GHz low-noise amplifiers based on a GaAs PM-HEMT technology

1998 ◽  
Vol 8 (11) ◽  
pp. 396-398 ◽  
Author(s):  
A. Bessemoulin ◽  
L. Verweyen ◽  
H. Massler ◽  
W. Reinert ◽  
G. Alquie ◽  
...  
Keyword(s):  
Low Noise ◽  
Low Noise Amplifiers ◽  
60 Ghz

60-GHz GaAs MMIC low-noise amplifiers

2003 ◽  
Author(s):  
H.-L.A. Hung ◽  
T.T. Lee ◽  
F.R. Phelleps ◽  
J.F. Singer ◽  
J.F. Bass ◽  
...  
Keyword(s):  
Low Noise ◽  
Low Noise Amplifiers ◽  
60 Ghz

scholarly journals Computation of Constant Gain and NF Circles for 60 GHz Ultra-low noise Amplifiers

2021 ◽  
Vol 3 (3) ◽  
pp. 146-156
Author(s):  
Christina Gnanamani ◽  
Shanthini Pandiaraj
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
Communication Link ◽  
60 Ghz ◽  
Output Impedance ◽  
Maximum Value ◽  
Input Module ◽  
Ultra Low Noise ◽  
Constant Source

Wireless communication is a constantly evolving and forging domain. The action of the RF input module is critical in the radio frequency signal communication link. This paper discusses the design of a RF high frequency transistor amplifier for unlicensed 60 GHz applications. The Transistor used for analysis is a FET amplifier, operated at 60GHz with 10 mA at 6.0 V. The simulation of the amplifier is made with the Open Source Scilab 6.0.1 console software. The MESFET is biased such that Sll = 0.9<30°, S12 = 0.21<-60°, S21= 2.51<-80°, and S22 = 0.21<-15o. It is found that the transistor is unconditionally stable and hence unilateral approximation can be employed. With these assumptions, the maximum value of source gain of the amplifier is found to be at 7.212 dB and the various constant source gain circles and noise figure circles are computed. The transistor has the following noise parameters: Fmin = 3 dB, Rn = 4 Ω, and Γopt = 0.485<155°. The amplifier is designed to have an input and output impedance of 50 ohms which is considered as the reference impedance.

Hardware efficient receiver for low-cost ultra-high rate 60 GHz wireless communications

2011 ◽  
Vol 3 (2) ◽  
pp. 121-129 ◽  
Author(s):  
Ahmet Çağrı Ulusoy ◽  
Gang Liu ◽  
Andreas Trasser ◽  
Hermann Schumacher
Keyword(s):  
Communication Systems ◽  
High Speed ◽  
Low Cost ◽  
Intermediate Frequency ◽  
Low Noise ◽  
High Rate ◽  
Low Noise Amplifiers ◽  
Range Data ◽  
60 Ghz ◽  
5 Ghz

This paper presents a hardware efficient receiver architecture, to be used in low-cost, ultra-high rate 60 GHz wireless communication systems. The receiver utilizes a simple, feed-forward carrier recovery concept, performing phase and frequency synchronization in the analog domain. This enables 1-bit baseband processing without a need of ultra-high speed and high precision analog-to-digital conversion, offering a strong simplification of the system architecture and comparatively low power consumption. In a first prototype implementation, the receiver is realized in a low-cost SiGe technology as two separate ICs: the 60 GHz/5 GHz downconverter, and the intermediate frequency synchronous demodulator. The simple synchronous reception concept is experimentally validated for up to 3.5 Gbit/s data rate, which constituted the limit of the existing experimental setup. Furthermore, the downconverter demonstrates that low-cost technologies (fop/fmax ~ 0.75) can be used to realize short-range data links at 60 GHz, with low-noise amplifiers in a more performant technology as needed.

scholarly journals Design and Analysis for a 60-GHz Low-Noise Amplifier With RF ESD Protection

2009 ◽  
Vol 57 (2) ◽  
pp. 298-305 ◽  
Author(s):  
Bo-Jr Huang ◽  
Chi-Hsueh Wang ◽  
Chung-Chun Chen ◽  
Ming-Fong Lei ◽  
Pin-Cheng Huang ◽  
...  
Keyword(s):  
Low Noise ◽  
Low Noise Amplifier ◽  
60 Ghz ◽  
Esd Protection ◽  
Noise Amplifier

60 GHz low noise amplifiers with 1 kV CDM protection in 40 nm LP CMOS

2012 ◽  
Author(s):  
Kuba Raczkowski ◽  
Steven Thijs ◽  
Jen-Chou Tseng ◽  
Tzu-Heng Chang ◽  
Ming-Hsiang Song ◽  
...  
Keyword(s):  
Low Noise ◽  
Low Noise Amplifiers ◽  
60 Ghz
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