scholarly journals Analysis and optimization of packaged inductively degenerated common-source low-noise amplifiers with ESD protection

2005 ◽  
Vol 53 (4) ◽  
pp. 1304-1313 ◽  
Author(s):  
P. Sivonen ◽  
A. Parssinen
2013 ◽  
Vol 61 (1) ◽  
pp. 553-561 ◽  
Author(s):  
Ming-Hsien Tsai ◽  
Shawn S. H. Hsu ◽  
Fu-Lung Hsueh ◽  
Chewn-Pu Jou ◽  
Tzu-Jin Yeh

2005 ◽  
Vol 15 (02) ◽  
pp. 377-428
Author(s):  
DAVID J. ALLSTOT ◽  
SANKARAN ANIRUDDHAN ◽  
MIN CHU ◽  
JEYANANDH PARAMESH ◽  
SUDIP SHEKHAR

Several state-of-the-art wireless receiver architectures are presented including the traditional super-heterodyne, the image-reject heterodyne, the direct-conversion, and the very-low intermediate frequency (VLIF). The case studies are followed by a detailed view of receiver building blocks: low-noise amplifiers (LNA), mixers, and voltage-controlled oscillators (VCO). Two popular topologies currently exist for LNAs: the common-gate configuration, which offers low power consumption with superior stability, robustness and linearity performance, and its common-source counterpart, which provides comparatively higher gain and lower noise figure. Aside from the traditional passive and active Gilbert mixers, the even-harmonic and masking-quadrature mixers are developed to combat second-order non-linearity and improve image-rejection, respectively. For quadrature carrier generation, the degeneration-injected QVCO is superior to the cascode-injected QVCO both in terms of phase noise and tuning range. The Colpitts QVCO is attractive as a low-noise alternative as it does not disturb the output voltage as much as its traditional LC counterpart and thus offers lower phase noise.


VLSI Design ◽  
2015 ◽  
Vol 2015 ◽  
pp. 1-16 ◽  
Author(s):  
David H. K. Hoe ◽  
Xiaoyu Jin

With continued process scaling, CMOS has become a viable technology for the design of high-performance low noise amplifiers (LNAs) in the radio frequency (RF) regime. This paper describes the design of RF LNAs using a geometric programming (GP) optimization method. An important challenge for RF LNAs designed at nanometer scale geometries is the excess thermal noise observed in the MOSFETs. An extensive survey of analytical models and experimental results reported in the literature is carried out to quantify the issue of excessive thermal noise for short-channel MOSFETs. Short channel effects such as channel-length modulation and velocity saturation effects are also accounted for in our optimization process. The GP approach is able to efficiently calculate the globally optimum solution. The approximations required to setup the equations and constraints to allow convex optimization are detailed. The method is applied to the design of inductive source degenerated common source amplifiers at the 90 nm and 180 nm technology nodes. The optimization results are validated through comparison with numerical simulations using Agilent’s Advanced Design Systems (ADS) software.


2020 ◽  
Vol 96 (3s) ◽  
pp. 347-352
Author(s):  
Д.Г. Алипа ◽  
В.В. Краснов ◽  
В.М. Минненбаев ◽  
А.В. Редька ◽  
Ю.В. Федоров

В статье представлены результаты исследования возможности применения при криогенных температурах водородного уровня дискретных приборов и монолитных схем на основе нитрида галлия в составе малошумящих усилителей сантиметрового и миллиметрового диапазона длин волн для приемных устройств систем дистанционного зондирования Земли из космоса и в составе криогенных комплексов наблюдения космического пространства. The article presents the results of the research on the possibility of using discrete devices and gallium nitride monolithic circuits at the cryogenic temperatures of hydrogen level as part of low-noise amplifiers of centimeter and millimeter-wave bands used in receivers of Earth remote sensing space systems and in cryogenic systems for space observation.


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